1N5406H, 3A, 200A, DO-27, DO-27 ( 9.2x5.2mm ), 600V. Forward current (AV): 3A. IFSM: 200A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 9.2x5.2mm ). VRRM: 600V. Assembly/installation: PCB through-hole mounting. Cj: 40pF. Dielectric structure: Anode-Cathode. Forward voltage Vf (min): 1.1V. MRI (max): 500uA. MRI (min): 5uA. Note: center distance 15mm. Number of terminals: 2. Operating temperature: -65...+175°C. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Spec info: IFSM--200Ap t=8.3ms. Threshold voltage Vf (max): 1.1V. Trr Diode (Min.): 5us. Original product from manufacturer: Dc Components Co. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 14:24