| +2500 rapidement | |
| Obsolete | |
| Out of stock | |
| Replacement | |
| Notif | |
| 12 in stock | |
| x2 |
1N914, DO-35 ( SOD27 ), 300mA, 4A, DO-35, 100V
Quantity
Unit price
10-24
0.0626$
25-49
0.0486$
50+
0.0347$
| +150 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability! | |
| Equivalence available | |
| Quantity in stock: 7145 |
1N914, DO-35 ( SOD27 ), 300mA, 4A, DO-35, 100V. Housing: DO-35 ( SOD27 ). Forward current (AV): 300mA. IFSM: 4A. Housing (according to data sheet): DO-35. VRRM: 100V. Assembly/installation: PCB through-hole mounting. Cj: 4pF. Dielectric structure: Anode-Cathode. Diode type: switching diode. Driving current: 0.3A. Forward voltage Vf (min): 620mV. MRI (max): 5uA. MRI (min): 25nA. Max reverse voltage: 100V. Number of terminals: 2. Operating temperature: 0...+175°C. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Semiconductor structure: diode. Spec info: IFSM--1Ap t=1sec. Threshold voltage Vf (max): 1V. Trr Diode (Min.): 4 ns. Original product from manufacturer: Fairchild. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 14:24
1N914
25 parameters
Housing
DO-35 ( SOD27 )
Forward current (AV)
300mA
IFSM
4A
Housing (according to data sheet)
DO-35
VRRM
100V
Assembly/installation
PCB through-hole mounting
Cj
4pF
Dielectric structure
Anode-Cathode
Diode type
switching diode
Driving current
0.3A
Forward voltage Vf (min)
620mV
MRI (max)
5uA
MRI (min)
25nA
Max reverse voltage
100V
Number of terminals
2
Operating temperature
0...+175°C
Quantity per case
1
RoHS
yes
Semiconductor material
silicon
Semiconductor structure
diode
Spec info
IFSM--1Ap t=1sec
Threshold voltage Vf (max)
1V
Trr Diode (Min.)
4 ns
Original product from manufacturer
Fairchild
Minimum quantity
10