Electronic components and equipment, for businesses and individuals

3JU41

3JU41
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Quantity excl. VAT VAT incl.
1 - 4 1.13$ 1.22$
5 - 9 1.07$ 1.16$
10 - 21 1.02$ 1.10$
Quantity U.P
1 - 4 1.13$ 1.22$
5 - 9 1.07$ 1.16$
10 - 21 1.02$ 1.10$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 21
Set of 1

3JU41. Forward current (AV): 3A. Housing: DO-201. Housing (according to data sheet): DO-201AD 8x6mm. VRRM: 600V. Dielectric structure: Anode-Cathode. Diode Tff(25°C): 200 ns. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Note: HIGH Speed Rectifier, (Fast Recovery). MRI (max): 100uA. Marking on the case: 3JU. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 2V. Quantity in stock updated on 27/04/2025, 09:25.

Equivalent products :

Quantity in stock : 2731
UF5408

UF5408

RoHS: yes. Component family: Fast rectifier diode (tr<500ns). Housing: PCB soldering. Housing: DO-20...
UF5408
RoHS: yes. Component family: Fast rectifier diode (tr<500ns). Housing: PCB soldering. Housing: DO-201. Housing (JEDEC standard): silicon. Configuration: PCB through-hole mounting. Number of terminals: 2. Forward current [A]: 3A. Ifsm [A]: 60.4k Ohms. Close voltage (repetitive) Vrrm [V]: 1 kV. Leakage current on closing Ir [A]: 5uA..50uA. Switching speed (regeneration time) tr [sec.]: 75 ns. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V. VRRM: 800V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +175°C. Forward voltage Vfmax (V): 1.7V @ 3A
UF5408
RoHS: yes. Component family: Fast rectifier diode (tr<500ns). Housing: PCB soldering. Housing: DO-201. Housing (JEDEC standard): silicon. Configuration: PCB through-hole mounting. Number of terminals: 2. Forward current [A]: 3A. Ifsm [A]: 60.4k Ohms. Close voltage (repetitive) Vrrm [V]: 1 kV. Leakage current on closing Ir [A]: 5uA..50uA. Switching speed (regeneration time) tr [sec.]: 75 ns. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V. VRRM: 800V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +175°C. Forward voltage Vfmax (V): 1.7V @ 3A
Set of 1
0.34$ VAT incl.
(0.31$ excl. VAT)
0.34$
Quantity in stock : 77
31DF6

31DF6

Forward current (AV): 3A. IFSM: 45A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( ...
31DF6
Forward current (AV): 3A. IFSM: 45A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 5.6x10mm ). VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultra-Fast Recovery. MRI (max): 100uA. MRI (min): 20uA. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V
31DF6
Forward current (AV): 3A. IFSM: 45A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 5.6x10mm ). VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultra-Fast Recovery. MRI (max): 100uA. MRI (min): 20uA. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V
Set of 1
3.44$ VAT incl.
(3.18$ excl. VAT)
3.44$
Quantity in stock : 100
UF3005M

UF3005M

Forward current (AV): 3A. IFSM: 150A. Housing: DO-201. Housing (according to data sheet): DO-201AD (...
UF3005M
Forward current (AV): 3A. IFSM: 150A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 8.8x5.1mm ). VRRM: 600V. Cj: 50pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultra fast switching. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm 150Ap t=8.2ms
UF3005M
Forward current (AV): 3A. IFSM: 150A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 8.8x5.1mm ). VRRM: 600V. Cj: 50pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultra fast switching. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm 150Ap t=8.2ms
Set of 1
1.34$ VAT incl.
(1.24$ excl. VAT)
1.34$
Quantity in stock : 199
BYT56M

BYT56M

Forward current (AV): 3A. IFSM: 80A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): S...
BYT56M
Forward current (AV): 3A. IFSM: 80A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 1000V. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: Very fast rectification and switching diode. MRI (max): 150uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.4V. Forward voltage Vf (min): 1.4V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 2500. Spec info: IFSM--80Ap (t=10ms)
BYT56M
Forward current (AV): 3A. IFSM: 80A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 1000V. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: Very fast rectification and switching diode. MRI (max): 150uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.4V. Forward voltage Vf (min): 1.4V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 2500. Spec info: IFSM--80Ap (t=10ms)
Set of 1
1.92$ VAT incl.
(1.78$ excl. VAT)
1.92$

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BYV26E

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Forward current (AV): 1A. IFSM: 30A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): S...
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1N5062

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