BAS85, 12.7k Ohms, 0.2A, 4A, SOD-80C, 30 v. Housing: 12.7k Ohms. Forward current (AV): 0.2A. IFSM: 4A. Housing (according to data sheet): SOD-80C. VRRM: 30 v. Assembly/installation: surface-mounted component (SMD). Cj: 10pF. Conduction voltage (threshold voltage): 0.8V. Dielectric structure: Anode-Cathode. Diode type: Schottky rectifier diode. Driving current: 200mA. Forward voltage Vf (min): 0.24V. Function: Glass Fast Switching Schottky Barrier Diodes. MRI (max): 2uA. Max reverse voltage: 30V. Number of terminals: 2. Operating temperature: -55...+125°C. Pd (Power Dissipation, Max): 200mW. Pulse current max.: 5A. Quantity per case: 1. RoHS: yes. Semiconductor material: Sb. Semiconductor structure: diode. Spec info: IFSM--4A t=10ms. Threshold voltage Vf (max): 0.8V. Threshold voltage: 320mV. Trr Diode (Min.): 5 ns. Original product from manufacturer: Taiwan Semiconductor. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 18:01