BAS85-GS08, 12.7k Ohms, 30 v, 0.2A, 0.2A, 0.2A, 0.6A, SOD-80C. Housing: 12.7k Ohms. Housing (JEDEC standard): -. VRRM: 30 v. Average Rectified Current per Diode: 0.2A. Forward current (AV): 0.2A. Forward current [A]: 0.2A. IFSM: 0.6A. Housing (according to data sheet): SOD-80C. Assembly/installation: surface-mounted component (SMD). Cj: 10pF. Close voltage (repetitive) Vrrm [V]: 30 v. Component family: Schottky diode for small signals, SMD mounting. Configuration: surface-mounted component (SMD). Dielectric structure: Anode-Cathode. Diode Configuration: independent. Diode type: schottky. Forward Voltage (Max): <0.80V / 0.1A. Forward voltage Vf (min): 0.24V. Function: Glass Fast Switching Schottky Barrier Diodes. Ifsm [A]: 0.6A. Information: -. Leakage current on closing Ir [A]: 0.2uA..2uA. MRI (max): 2uA. MRI (min): 0.2uA. MSL: -. Max temperature: +150°C.. Mounting Type: SMD. Number of terminals: 2. Number of terminals: 2. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 200mW. Quantity per case: 1. Reverse Leakage Current: 2uA / 25V. RoHS: yes. Semiconductor material: Sb. Series: BAS. Spec info: IFSM 0.6A t=1s. Switching speed (regeneration time) tr [sec.]: 5 ns. Threshold voltage Vf (max): 0.8V. Trr Diode (Min.): 5 ns. [V]: 0.4V @ 10mA. Original product from manufacturer: Vishay. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 18:01