BAV21, DO-35 ( SOD27 ), 250V, 0.25A, 0.25A, 0.25A, 1A, DO-35

BAV21, DO-35 ( SOD27 ), 250V, 0.25A, 0.25A, 0.25A, 1A, DO-35

Quantity
Unit price
10-49
0.0426$
50-99
0.0360$
100-249
0.0317$
250+
0.0266$
+19101 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability!
Quantity in stock: 7651
Minimum: 10

BAV21, DO-35 ( SOD27 ), 250V, 0.25A, 0.25A, 0.25A, 1A, DO-35. Housing: DO-35 ( SOD27 ). Housing (JEDEC standard): -. VRRM: 250V. Average Rectified Current per Diode: 0.25A. Forward current (AV): 0.25A. Forward current [A]: 0.25A. IFSM: 1A. Housing (according to data sheet): DO-35. Assembly/installation: PCB through-hole mounting. Capacitance: 1.5pF. Cj: 5pF. Close voltage (repetitive) Vrrm [V]: 200V. Component family: Small-signal silicon diode. Conditioning: Ammo Pack. Conduction voltage (threshold voltage): 1V. Configuration: PCB through-hole mounting. Dielectric structure: Anode-Cathode. Diode Configuration: independent. Diode type: switching diode. Forward Voltage (Max): <1.0V / 0.1A. Forward voltage Vf (min): 1V. Function: General purpose diodes. Ifsm [A]: 1A. Information: -. Leakage current on closing Ir [A]: 100nA..15uA. MSL: -. Max reverse voltage: 250V. Max temperature: +200°C.. Mounting Type: THT. Note: IFSM--1App tp= 1s, Tj=25°C. Number of terminals: 2. Number of terminals: 2. Packaging: Ammo Pack. Pulse current max.: 1A. Quantity per case: 1. Reaction time: 50ns. Reverse Leakage Current: 100nA / 200V. Reverse Recovery Time (Max): 50ns. RoHS: yes. Semiconductor material: silicon. Semiconductor structure: diode. Semiconductor type: diode. Series: BAV. Switching speed (regeneration time) tr [sec.]: 50 ns. Threshold voltage Vf (max): 1.25V. Threshold voltage: 1V, 1.1V. Trr Diode (Min.): 50 ns. [V]: 1V @ 100mA. Original product from manufacturer: Vishay. Minimum quantity: 10. Quantity in stock updated on 31/10/2025, 08:15

Technical documentation (PDF)
BAV21
47 parameters
Housing
DO-35 ( SOD27 )
VRRM
250V
Average Rectified Current per Diode
0.25A
Forward current (AV)
0.25A
Forward current [A]
0.25A
IFSM
1A
Housing (according to data sheet)
DO-35
Assembly/installation
PCB through-hole mounting
Capacitance
1.5pF
Cj
5pF
Close voltage (repetitive) Vrrm [V]
200V
Component family
Small-signal silicon diode
Conditioning
Ammo Pack
Conduction voltage (threshold voltage)
1V
Configuration
PCB through-hole mounting
Dielectric structure
Anode-Cathode
Diode Configuration
independent
Diode type
switching diode
Forward Voltage (Max)
<1.0V / 0.1A
Forward voltage Vf (min)
1V
Function
General purpose diodes
Ifsm [A]
1A
Leakage current on closing Ir [A]
100nA..15uA
Max reverse voltage
250V
Max temperature
+200°C.
Mounting Type
THT
Note
IFSM--1App tp= 1s, Tj=25°C
Number of terminals
2
Number of terminals
2
Packaging
Ammo Pack
Pulse current max.
1A
Quantity per case
1
Reaction time
50ns
Reverse Leakage Current
100nA / 200V
Reverse Recovery Time (Max)
50ns
RoHS
yes
Semiconductor material
silicon
Semiconductor structure
diode
Semiconductor type
diode
Series
BAV
Switching speed (regeneration time) tr [sec.]
50 ns
Threshold voltage Vf (max)
1.25V
Threshold voltage
1V, 1.1V
Trr Diode (Min.)
50 ns
[V]
1V @ 100mA
Original product from manufacturer
Vishay
Minimum quantity
10