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NPN-Transistor, 0.1A, TO-92, TO-92, 50V - BC560B

NPN-Transistor, 0.1A, TO-92, TO-92, 50V - BC560B
[TITLE]
Quantity excl. VAT VAT incl.
1 - 9 0.33$ 0.36$
10 - 19 0.32$ 0.35$
Quantity U.P
1 - 9 0.33$ 0.36$
10 - 19 0.32$ 0.35$
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Quantity in stock : 19
Set of 1

NPN-Transistor, 0.1A, TO-92, TO-92, 50V - BC560B. NPN-Transistor, 0.1A, TO-92, TO-92, 50V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: hFE 200...450. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Spec info: complementary transistor (pair) BC550B. Quantity in stock updated on 27/04/2025, 15:25.

Equivalent products :

Quantity in stock : 3745
BC560CG

BC560CG

NPN-Transistor, TO-92, 100mA, TO-92, 45V. Housing: TO-92. Collector current: 100mA. Housing (accordi...
BC560CG
NPN-Transistor, TO-92, 100mA, TO-92, 45V. Housing: TO-92. Collector current: 100mA. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. RoHS: yes. Resistor B: yes. BE diode: PNP transistor. BE resistor: PCB soldering. C(in): TO-92. Cost): TO-226AA. CE diode: PCB through-hole mounting. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: hFE 380...800, (IC=2.0mAdc, VCE=5.0Vdc). Max hFE gain: 800. Minimum hFE gain: 100. Ic(pulse): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.3V. Vebo: 5V. Spec info: complementary transistor (pair) BC550C
BC560CG
NPN-Transistor, TO-92, 100mA, TO-92, 45V. Housing: TO-92. Collector current: 100mA. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. RoHS: yes. Resistor B: yes. BE diode: PNP transistor. BE resistor: PCB soldering. C(in): TO-92. Cost): TO-226AA. CE diode: PCB through-hole mounting. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: hFE 380...800, (IC=2.0mAdc, VCE=5.0Vdc). Max hFE gain: 800. Minimum hFE gain: 100. Ic(pulse): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.3V. Vebo: 5V. Spec info: complementary transistor (pair) BC550C
Set of 1
0.19$ VAT incl.
(0.18$ excl. VAT)
0.19$

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