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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, 4A, TO-126 (TO-225, SOT-32), TO-126, 80V - BD680

NPN-Transistor, 4A, TO-126 (TO-225, SOT-32), TO-126, 80V - BD680
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 9 0.71$ 0.77$
10 - 24 0.68$ 0.74$
25 - 49 0.65$ 0.70$
50 - 99 0.63$ 0.68$
100 - 249 0.57$ 0.62$
250 - 367 0.57$ 0.62$
Quantity U.P
1 - 9 0.71$ 0.77$
10 - 24 0.68$ 0.74$
25 - 49 0.65$ 0.70$
50 - 99 0.63$ 0.68$
100 - 249 0.57$ 0.62$
250 - 367 0.57$ 0.62$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 367
Set of 1

NPN-Transistor, 4A, TO-126 (TO-225, SOT-32), TO-126, 80V - BD680. NPN-Transistor, 4A, TO-126 (TO-225, SOT-32), TO-126, 80V. Collector current: 4A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. RoHS: yes. Resistor B: yes. BE diode: no. BE resistor: R1 typ=15k Ohms, R2 typ=100 Ohms. C(in): TO-126. Cost): SOT-32. CE diode: yes. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: hFE 750. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. Spec info: complementary transistor (pair) BD679. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Original product from manufacturer Stmicroelectronics. Quantity in stock updated on 16/06/2025, 15:25.

Technical documentation

Equivalent products :

Quantity in stock : 882
BD682

BD682

NPN-Transistor, TO-126, 100V, 4A, 100V, -100V, -4A. Housing: TO-126. Collector-emitter voltage Uceo ...
BD682
NPN-Transistor, TO-126, 100V, 4A, 100V, -100V, -4A. Housing: TO-126. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 4A. Collector/emitter voltage Vceo: 100V. Collector-Emitter Voltage VCEO: -100V. Collector current: -4A. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Cutoff frequency ft [MHz]: NF-L. Pd (Power Dissipation, Max): 40W. Spec info: complementary transistor (pair) BD681. Type of transistor: PNP. Type of transistor: Darlington Power Transistor. Polarity: PNP. Type: Darlington transistor. Built-in diode: yes. Power: 40W
BD682
NPN-Transistor, TO-126, 100V, 4A, 100V, -100V, -4A. Housing: TO-126. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 4A. Collector/emitter voltage Vceo: 100V. Collector-Emitter Voltage VCEO: -100V. Collector current: -4A. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Cutoff frequency ft [MHz]: NF-L. Pd (Power Dissipation, Max): 40W. Spec info: complementary transistor (pair) BD681. Type of transistor: PNP. Type of transistor: Darlington Power Transistor. Polarity: PNP. Type: Darlington transistor. Built-in diode: yes. Power: 40W
Set of 1
0.99$ VAT incl.
(0.92$ excl. VAT)
0.99$
Quantity in stock : 4
BD680-DIV

BD680-DIV

NPN-Transistor, 4A, TO-126 (TO-225, SOT-32), TO-126, 80V. Collector current: 4A. Housing: TO-126 (TO...
BD680-DIV
NPN-Transistor, 4A, TO-126 (TO-225, SOT-32), TO-126, 80V. Collector current: 4A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP
BD680-DIV
NPN-Transistor, 4A, TO-126 (TO-225, SOT-32), TO-126, 80V. Collector current: 4A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP
Set of 1
0.67$ VAT incl.
(0.62$ excl. VAT)
0.67$

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