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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, 4A, TO-126 (TO-225, SOT-32), TO-126, 80V - BD680-DIV

NPN-Transistor, 4A, TO-126 (TO-225, SOT-32), TO-126, 80V - BD680-DIV
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 0.62$ 0.67$
Quantity U.P
1 - 4 0.62$ 0.67$
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Quantity in stock : 4
Set of 1

NPN-Transistor, 4A, TO-126 (TO-225, SOT-32), TO-126, 80V - BD680-DIV. NPN-Transistor, 4A, TO-126 (TO-225, SOT-32), TO-126, 80V. Collector current: 4A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Original product from manufacturer Div. Quantity in stock updated on 16/06/2025, 21:25.

Equivalent products :

Quantity in stock : 882
BD682

BD682

NPN-Transistor, TO-126, 100V, 4A, 100V, -100V, -4A. Housing: TO-126. Collector-emitter voltage Uceo ...
BD682
NPN-Transistor, TO-126, 100V, 4A, 100V, -100V, -4A. Housing: TO-126. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 4A. Collector/emitter voltage Vceo: 100V. Collector-Emitter Voltage VCEO: -100V. Collector current: -4A. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Cutoff frequency ft [MHz]: NF-L. Pd (Power Dissipation, Max): 40W. Spec info: complementary transistor (pair) BD681. Type of transistor: PNP. Type of transistor: Darlington Power Transistor. Polarity: PNP. Type: Darlington transistor. Built-in diode: yes. Power: 40W
BD682
NPN-Transistor, TO-126, 100V, 4A, 100V, -100V, -4A. Housing: TO-126. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 4A. Collector/emitter voltage Vceo: 100V. Collector-Emitter Voltage VCEO: -100V. Collector current: -4A. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Cutoff frequency ft [MHz]: NF-L. Pd (Power Dissipation, Max): 40W. Spec info: complementary transistor (pair) BD681. Type of transistor: PNP. Type of transistor: Darlington Power Transistor. Polarity: PNP. Type: Darlington transistor. Built-in diode: yes. Power: 40W
Set of 1
0.99$ VAT incl.
(0.92$ excl. VAT)
0.99$
Quantity in stock : 367
BD680

BD680

NPN-Transistor, 4A, TO-126 (TO-225, SOT-32), TO-126, 80V. Collector current: 4A. Housing: TO-126 (TO...
BD680
NPN-Transistor, 4A, TO-126 (TO-225, SOT-32), TO-126, 80V. Collector current: 4A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. RoHS: yes. Resistor B: yes. BE diode: no. BE resistor: R1 typ=15k Ohms, R2 typ=100 Ohms. C(in): TO-126. Cost): SOT-32. CE diode: yes. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: hFE 750. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. Spec info: complementary transistor (pair) BD679. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP
BD680
NPN-Transistor, 4A, TO-126 (TO-225, SOT-32), TO-126, 80V. Collector current: 4A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. RoHS: yes. Resistor B: yes. BE diode: no. BE resistor: R1 typ=15k Ohms, R2 typ=100 Ohms. C(in): TO-126. Cost): SOT-32. CE diode: yes. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: hFE 750. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. Spec info: complementary transistor (pair) BD679. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP
Set of 1
0.77$ VAT incl.
(0.71$ excl. VAT)
0.77$
Quantity in stock : 93
BD684

BD684

NPN-Transistor, 4A, 120V. Collector current: 4A. Collector/emitter voltage Vceo: 120V. Darlington tr...
BD684
NPN-Transistor, 4A, 120V. Collector current: 4A. Collector/emitter voltage Vceo: 120V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L. Note: >750. Pd (Power Dissipation, Max): 40W. Type of transistor: PNP
BD684
NPN-Transistor, 4A, 120V. Collector current: 4A. Collector/emitter voltage Vceo: 120V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L. Note: >750. Pd (Power Dissipation, Max): 40W. Type of transistor: PNP
Set of 1
1.35$ VAT incl.
(1.25$ excl. VAT)
1.35$

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