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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 120mA, 30nA, 15 Ohms, TO-92, TO-92, 200V - BS107

N-channel transistor, 120mA, 30nA, 15 Ohms, TO-92, TO-92, 200V - BS107
[TITLE]
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.43$ 1.55$
5 - 9 1.36$ 1.47$
10 - 24 1.32$ 1.43$
25 - 49 1.29$ 1.39$
50 - 99 1.26$ 1.36$
100 - 162 1.14$ 1.23$
Quantity U.P
1 - 4 1.43$ 1.55$
5 - 9 1.36$ 1.47$
10 - 24 1.32$ 1.43$
25 - 49 1.29$ 1.39$
50 - 99 1.26$ 1.36$
100 - 162 1.14$ 1.23$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 162
Set of 1

N-channel transistor, 120mA, 30nA, 15 Ohms, TO-92, TO-92, 200V - BS107. N-channel transistor, 120mA, 30nA, 15 Ohms, TO-92, TO-92, 200V. ID (T=25°C): 120mA. Idss (max): 30nA. On-resistance Rds On: 15 Ohms. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 200V. C(in): 85pF. Cost): 20pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Diode Tff(25°C): 8 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 2A. Marking on the case: BS107. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 16 ns. Td(on): 7 ns. Technology: ENHANCEMENT MODE VERTICAL DMOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Original product from manufacturer Diodes Inc.. Quantity in stock updated on 01/08/2025, 10:25.

Technical documentation

Equivalent products :

Quantity in stock : 25
BS107ARL1G

BS107ARL1G

N-channel transistor, 250mA, 30nA, 6.4 Ohms, TO-92, TO-92, 200V. ID (T=25°C): 250mA. Idss (max): 30...
BS107ARL1G
N-channel transistor, 250mA, 30nA, 6.4 Ohms, TO-92, TO-92, 200V. ID (T=25°C): 250mA. Idss (max): 30nA. On-resistance Rds On: 6.4 Ohms. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 200V. C(in): 60pF. Cost): 30pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 500mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.6W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 12 ns. Td(on): 6 ns. Technology: (D-S) MOSFETs. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V
BS107ARL1G
N-channel transistor, 250mA, 30nA, 6.4 Ohms, TO-92, TO-92, 200V. ID (T=25°C): 250mA. Idss (max): 30nA. On-resistance Rds On: 6.4 Ohms. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 200V. C(in): 60pF. Cost): 30pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 500mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.6W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 12 ns. Td(on): 6 ns. Technology: (D-S) MOSFETs. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V
Set of 1
2.19$ VAT incl.
(2.03$ excl. VAT)
2.19$

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