Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 4.18$ | 4.52$ |
5 - 9 | 3.97$ | 4.29$ |
10 - 24 | 3.77$ | 4.08$ |
25 - 39 | 3.56$ | 3.85$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 4.18$ | 4.52$ |
5 - 9 | 3.97$ | 4.29$ |
10 - 24 | 3.77$ | 4.08$ |
25 - 39 | 3.56$ | 3.85$ |
BYT08P-1000. Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1000V. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 65 ns. Semiconductor material: silicon. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.9V. Forward voltage Vf (min): 1.4V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifrm 100Ap tp>10uS (Ifrm 50Ap tp=10ms). Quantity in stock updated on 28/04/2025, 03:25.
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