BYT30P-1000, 30A, 200A, TO-3P ( TO-218 SOT-93 ), 1000V
Quantity
Unit price
1-4
11.27$
5-14
10.25$
15-29
9.15$
30+
8.37$
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BYT30P-1000, 30A, 200A, TO-3P ( TO-218 SOT-93 ), 1000V. Forward current (AV): 30A. IFSM: 200A. Housing: TO-3P ( TO-218 SOT-93 ). VRRM: 1000V. Assembly/installation: PCB through-hole mounting. Dielectric structure: Anode-Cathode. Forward voltage Vf (min): 1.8V. MRI (max): 5mA. MRI (min): 100uA. Note: metal part connected to the cathode. Number of terminals: 2. Operating temperature: -40...+150°C. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Spec info: IFSM--200Ap t=10ms. Threshold voltage Vf (max): 1.9V. Trr Diode (Min.): 70 ns. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 13/11/2025, 08:57
BYT30P-1000
19 parameters
Forward current (AV)
30A
IFSM
200A
Housing
TO-3P ( TO-218 SOT-93 )
VRRM
1000V
Assembly/installation
PCB through-hole mounting
Dielectric structure
Anode-Cathode
Forward voltage Vf (min)
1.8V
MRI (max)
5mA
MRI (min)
100uA
Note
metal part connected to the cathode
Number of terminals
2
Operating temperature
-40...+150°C
Quantity per case
1
RoHS
yes
Semiconductor material
silicon
Spec info
IFSM--200Ap t=10ms
Threshold voltage Vf (max)
1.9V
Trr Diode (Min.)
70 ns
Original product from manufacturer
Stmicroelectronics