DSEI2X101-12A

Quantity	excl. VAT	VAT incl.
1 - 1	84.89$	91.77$
2 - 2	80.64$	87.17$
3 - 4	76.40$	82.59$
5 - 9	72.15$	77.99$
10 - 14	70.46$	76.17$
15 - 19	68.76$	74.33$
20+	66.21$	71.57$

Quantity	U.P
1 - 1	84.89$	91.77$
2 - 2	80.64$	87.17$
3 - 4	76.40$	82.59$
5 - 9	72.15$	77.99$
10 - 14	70.46$	76.17$
15 - 19	68.76$	74.33$
20+	66.21$	71.57$

Delivery in 2-3 days, with postal tracking!

Out of stock

Set of 1

DSEI2X101-12A. Forward current (AV): 2x91A. IFSM: 900A. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP ( SOT227B ). VRRM: 1200V. Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. MRI (max): 15mA. MRI (min): 1.5mA. Pd (Power Dissipation, Max): 250W. Delivery time: KB. Assembly/installation: screw. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.87V. Forward voltage Vf (min): 1.61V. Conditioning unit: 10. Quantity per case: 2. Note: epitaxial diode, high current. Note: 900App/10ms, 45°C. Function: dual fast recovery diode. Spec info: 810Ap t=10ms, TVJ=150°C. Quantity in stock updated on 27/04/2025, 18:25.

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Delivery in 2-3 days, with postal tracking!