Electronic components and equipment, for businesses and individuals

EGP20D

EGP20D
[TITLE]
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 9 0.79$ 0.85$
10 - 24 0.75$ 0.81$
25 - 49 0.73$ 0.79$
50 - 99 0.71$ 0.77$
100 - 249 0.70$ 0.76$
250 - 499 0.67$ 0.72$
500 - 543 0.65$ 0.70$
Quantity U.P
1 - 9 0.79$ 0.85$
10 - 24 0.75$ 0.81$
25 - 49 0.73$ 0.79$
50 - 99 0.71$ 0.77$
100 - 249 0.70$ 0.76$
250 - 499 0.67$ 0.72$
500 - 543 0.65$ 0.70$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 543
Set of 1

EGP20D. Forward current (AV): 2A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x7.2mm ). VRRM: 200V. Semiconductor material: silicon. Note: Gl, S. Note: 75Ap/8.3ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Original product from manufacturer Ge (tungsram). Quantity in stock updated on 25/07/2025, 15:25.

Equivalent products :

Quantity in stock : 1954
BYV27-200-TAP

BYV27-200-TAP

VRRM: 200V. Forward current (AV): 2A. IFSM: 50A. Housing: SOD-57 ( Glass ). Housing (according to da...
BYV27-200-TAP
VRRM: 200V. Forward current (AV): 2A. IFSM: 50A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass ( 4.5x3.6mm ). RoHS: yes. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.07V. Forward voltage Vf (min): 0.88V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: Ultra Fast Avalanche Sinterglass Diode. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. Spec info: IFSM--50App, t=10mS. Assembly/installation: PCB through-hole mounting
BYV27-200-TAP
VRRM: 200V. Forward current (AV): 2A. IFSM: 50A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass ( 4.5x3.6mm ). RoHS: yes. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.07V. Forward voltage Vf (min): 0.88V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: Ultra Fast Avalanche Sinterglass Diode. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. Spec info: IFSM--50App, t=10mS. Assembly/installation: PCB through-hole mounting
Set of 1
1.33$ VAT incl.
(1.23$ excl. VAT)
1.33$
Quantity in stock : 96
EGP20G

EGP20G

Forward current (AV): 2A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x7.2mm ). VR...
EGP20G
Forward current (AV): 2A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x7.2mm ). VRRM: 400V. Semiconductor material: silicon. Note: Gl, S. Note: 75Ap/8.3ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting
EGP20G
Forward current (AV): 2A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x7.2mm ). VRRM: 400V. Semiconductor material: silicon. Note: Gl, S. Note: 75Ap/8.3ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting
Set of 1
1.05$ VAT incl.
(0.97$ excl. VAT)
1.05$

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2SD667

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1N4007

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BD244C

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2SB647

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SB3200

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Forward current (AV): 3A. IFSM: 80A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( ...
SB3200
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1.41$

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