FET and MOSFET transistors

P-channel transistor, PCB soldering, TO-92, JFET, -20V, TO-92, 20V. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): JFET. Drain-source voltage Uds [V]: -20V. Housing (according to data sheet): TO-92. Voltage Vds(max): 20V. RoHS: no. Component family: P-Channel JFET Transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N3820. Drain current Idss [A] @ Ug=0V: -15mA. Gate-source breakpoint voltage Ugss [V] @ Uds=0V: +8V @ -10V. Maximum dissipation Ptot [W]: 0.36W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Gate/source voltage (off) max.: 8V

P-channel transistor, 6mA, 6mA, TO-18 ( TO-206 ), TO-18. ID (T=25°C): 6mA. Idss (max): 6mA. Housing: TO-18 ( TO-206 ). Housing (according to data sheet): TO-18. Quantity per case: 1. Function: P-FET S. Assembly/installation: PCB through-hole mounting

P-channel transistor, PCB soldering, TO-3P, -160V, -8A. Housing: PCB soldering. Housing: TO-3P. Drain-source voltage Uds [V]: -160V. Drain Current Id [A] @ 25°C: -8A. RoHS: no. Component family: MOSFET, P-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: J119. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.5 Ohms @ -4A. Gate breakdown voltage Ugs [V]: -5V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 90 ns. Ciss Gate Capacitance [pF]: 1050pF. Maximum dissipation Ptot [W]: 100W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, 7A, 7A, TO-3P ( TO-218 SOT-93 ), TO-3P, 160V. ID (T=25°C): 7A. Idss (max): 7A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 160V. C(in): 900pF. Cost): 400pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: Low-Frequency Power Amplifier. G-S Protection: yes. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 230 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 15V. Gate/source voltage (off) min.: 0.15V

P-channel transistor, 12A, 1mA, TO-264 ( TOP-3L ), 2-21F1B, 200V. ID (T=25°C): 12A. Idss (max): 1mA. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): 2-21F1B. Voltage Vds(max): 200V. C(in): 1500pF. Cost): 430pF. Channel type: P. Drain-source protection : no. Quantity per case: 1. Type of transistor: MOSFET. Function: High Power Amplifier Application. G-S Protection: no. Marking on the case: J201. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Field Effect Silicon P-Channel MOS Type. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Gate/source voltage (off) max.: 2.8V. Gate/source voltage (off) min.: 0.8V

P-channel transistor, 5A, 100uA, TO-220FP, TO-220FP, 200V. ID (T=25°C): 5A. Idss (max): 100uA. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 200V. C(in): 800pF. Cost): 270pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. G-S Protection: yes. Id(imp): 20A. Number of terminals: 3. On-resistance Rds On: 0.8 Ohms. Assembly/installation: PCB through-hole mounting. Technology: V-MOS (F). Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V

P-channel transistor, 6A, 100uA, TO-220FP, TO-220FP, 250V. ID (T=25°C): 6A. Idss (max): 100uA. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 250V. C(in): 1040pF. Cost): 360pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. Function: SWITCHING, POWER MOS FET. G-S Protection: no. Id(imp): 24A. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. On-resistance Rds On: 0.55 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 47 ns. Td(on): 24 ns. Technology: P-CHANNEL POWER MOS FET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) min.: 4 v

P-channel transistor, 5A, 5A, TO-220FP, TO-220FP, 250V. ID (T=25°C): 5A. Idss (max): 5A. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 250V. C(in): 800pF. Cost): 250pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 205 ns. Type of transistor: MOSFET. Function: 'Enhancement Mode Low Drain-Source On Resistance'. G-S Protection: yes. Id(imp): 20A. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. On-resistance Rds On: 1 Ohm. Assembly/installation: PCB through-hole mounting. Td(off): 70 ns. Td(on): 35 ns. Technology: Silicon P Chanel Mos Fet. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V

P-channel transistor, 4.5A, 100uA, TO-220FP, TO-220FP, 250V. ID (T=25°C): 4.5A. Idss (max): 100uA. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 250V. C(in): 450pF. Cost): 120pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: Ultrahigh-Speed Switching, IDP 18App/10us. G-S Protection: yes. Id(imp): 18A. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. On-resistance Rds On: 0.95 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 52 ns. Td(on): 30 ns. Technology: silicon MOSFET transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v

P-channel transistor, 12A, 12A, TO-251 ( I-Pak ), TO-251 ( I-Pak ), 60V. ID (T=25°C): 12A. Idss (max): 12A. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251 ( I-Pak ). Voltage Vds(max): 60V. C(in): 720pF. Cost): 150pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. Function: integrated protection diode. G-S Protection: yes. Id(imp): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 23W. On-resistance Rds On: 0.13 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 7 ns. Technology: P-channel MOS Field Effect Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V

P-channel transistor, 500mA, 500mA, TO-220, TO-220AB, 200V. ID (T=25°C): 500mA. Idss (max): 500mA. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 120pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Type of transistor: FET. Function: complementary transistor (pair) 2SK216. G-S Protection: yes. Pd (Power Dissipation, Max): 30W. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Gate/source voltage Vgs: 15V

P-channel transistor, 8A, 10mA, TO-247, TO-247, 200V. ID (T=25°C): 8A. Idss (max): 10mA. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 200V. C(in): 500pF. Cost): 300pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: AUDIO POWER MOSFET. G-S Protection: no. IDss (min): 10mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 125W. RoHS: yes. Spec info: complementary transistor (pair) ALF08N20V. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 100 ns. Gate/source voltage Vgs: 14V

P-channel transistor, 4.3A, 5uA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v. ID (T=25°C): 4.3A. Idss (max): 5uA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 30 v. C(in): 933pF. Cost): 108pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 21 ns. Type of transistor: MOSFET. Function: Low Input Charge. G-S Protection: no. Id(imp): 25A. ID (T=100°C): 3.8A. IDss (min): 1uA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 1.4W. On-resistance Rds On: 0.036 Ohms. RoHS: yes. Spec info: Operation gate voltage as low as 2.5V. Assembly/installation: surface-mounted component (SMD). Td(off): 42 ns. Td(on): 5.2 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 12V. Vgs(th) max.: 1.3V. Vgs(th) min.: 0.6V

P-channel transistor, 9.2A, 50uA, SO, SO-8, 30 v. ID (T=25°C): 9.2A. Idss (max): 50uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 2060pF. Cost): 370pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 30 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 60A. ID (T=100°C): 7.4A. IDss (min): 10uA. Note: screen printing/SMD code 4407A. Number of terminals: 8. Pd (Power Dissipation, Max): 1.7W. On-resistance Rds On: 0.0085 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 24 ns. Td(on): 11 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 3V. Vgs(th) min.: 1.7V

P-channel transistor, 12.5A, 5uA, SO, SO-8, 30 v. ID (T=25°C): 12.5A. Idss (max): 5uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 2330pF. Cost): 480pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 28 ns. Type of transistor: FET. Function: Switching or PWM applications. G-S Protection: yes. Id(imp): 60A. ID (T=100°C): 10.5A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 3W. On-resistance Rds On: 0.0094 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 49.5 ns. Td(on): 12.8 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 3V. Vgs(th) min.: 1.7V

P-channel transistor, SO, SO-8. Housing: SO. Housing (according to data sheet): SO-8. Channel type: N-P. Quantity per case: 2. Function: 0.032R&0.048R (32 & 48m Ohms). Number of terminals: 8. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: MOS-N&P-FET, Complementary ESD rating--3000V (HBM)

P-channel transistor, 85A, 5uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 30 v. ID (T=25°C): 85A. Idss (max): 5uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 30 v. C(in): 4360pF. Cost): 1050pF. Channel type: P. Conditioning: roll. Conditioning unit: 2500. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 39.5 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 200A. ID (T=100°C): 65A. IDss (min): 0.01uA. Number of terminals: 2. Pd (Power Dissipation, Max): 100W. On-resistance Rds On: 5.1M Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 51 ns. Td(on): 18 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 3.5V. Vgs(th) min.: 1.5V

P-channel transistor, 18A, 5uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 30 v. ID (T=25°C): 18A. Idss (max): 5uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 30 v. C(in): 920pF. Cost): 190pF. Channel type: P. Conditioning: roll. Conditioning unit: 2500. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 21.4 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 40A. ID (T=100°C): 18A. IDss (min): 0.003uA. Marking on the case: D405. Number of terminals: 2. Pd (Power Dissipation, Max): 60W. On-resistance Rds On: 24.5m Ohms. RoHS: yes. Spec info: complementary transistor (pair) AOD408. Assembly/installation: surface-mounted component (SMD). Td(off): 20 ns. Td(on): 9 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1.2V

P-channel transistor, 26A, 5uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. ID (T=25°C): 26A. Idss (max): 5uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. C(in): 2977pF. Cost): 241pF. Channel type: P. Conditioning: roll. Conditioning unit: 2500. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 40 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 60A. ID (T=100°C): 18A. IDss (min): 0.003uA. Marking on the case: D409. Number of terminals: 2. Pd (Power Dissipation, Max): 60W. On-resistance Rds On: 32m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 38 ns. Td(on): 12 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.4V. Vgs(th) min.: 1.2V

P-channel transistor, PCB soldering (SMD), DFN8, -30V, -36A. Housing: PCB soldering (SMD). Housing: DFN8. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -36A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: 7401. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.017 Ohms @ -7A. Gate breakdown voltage Ugs [V]: -2.2V. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 24 ns. Ciss Gate Capacitance [pF]: 2060pF. Maximum dissipation Ptot [W]: 36W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, 24A, 25uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 35V. ID (T=25°C): 24A. Idss (max): 25uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 35V. C(in): 990pF. Cost): 220pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 25 ns. Type of transistor: MOSFET. Function: fast Switching, DC/DC Converter. G-S Protection: no. Id(imp): 80A. ID (T=100°C): 15A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 31.25W. On-resistance Rds On: 0.036 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 20 ns. Td(on): 10 ns. Technology: 'Enhancement Mode Power MOSFET'. Operating temperature: -55°C...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) min.: 1V

P-channel transistor, 17A, 250uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. ID (T=25°C): 17A. Idss (max): 250uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. C(in): 1440pF. Cost): 160pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 43 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 60A. ID (T=100°C): 11A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 36W. On-resistance Rds On: 0.064 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 45 ns. Td(on): 12 ns. Technology: 'Enhancement Mode Power MOSFET'. Operating temperature: -55°C...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 3V. Vgs(th) min.: 1V

P-channel transistor, 10A, 250uA, TO-220, 60V. ID (T=25°C): 10A. Idss (max): 250uA. Housing: TO-220. Voltage Vds(max): 60V. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 60A. ID (T=100°C): 16A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 31.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 12 ns. Technology: 'Enhancement Mode Power MOSFET'. Operating temperature: -55°C...+150°C. Gate/source voltage Vgs: 25V

P-channel transistor, PCB soldering (SMD), SOT-23, -45V, -0.09A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: -45V. Drain Current Id [A] @ 25°C: -0.09A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: MX. Drain current through resistor Rds [Ohm] @ Ids [A]: 9 Ohms @ -0.2A. Gate breakdown voltage Ugs [V]: -3.5V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 10 ns. Ciss Gate Capacitance [pF]: 25pF. Maximum dissipation Ptot [W]: 0.33W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, 0.23A, 500nA, TO-92, TO-92, 45V. ID (T=25°C): 0.23A. Idss (max): 500nA. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 45V. C(in): 60pF. Channel type: P. Drain-source protection : no. Quantity per case: 1. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 3A. IDss (min): -0.23A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.7W. On-resistance Rds On: 14 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 20 ns. Td(on): 20 ns. Technology: ENHANCEMENT MODE VERTICAL DMOS FET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.5V. Vgs(th) min.: 1V