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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 8A, TO-220, TO-220, 400V - FJP13007H2

NPN transistor, 8A, TO-220, TO-220, 400V - FJP13007H2
[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 2.67$ 2.89$
5 - 9 2.54$ 2.75$
10 - 24 2.41$ 2.61$
25 - 49 2.27$ 2.45$
50 - 68 2.22$ 2.40$
Quantity U.P
1 - 4 2.67$ 2.89$
5 - 9 2.54$ 2.75$
10 - 24 2.41$ 2.61$
25 - 49 2.27$ 2.45$
50 - 68 2.22$ 2.40$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 68
Set of 1

NPN transistor, 8A, TO-220, TO-220, 400V - FJP13007H2. NPN transistor, 8A, TO-220, TO-220, 400V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 400V. Cost): 110pF. Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 39. Minimum hFE gain: 26. Ic(pulse): 16A. Marking on the case: J13007-2. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Maximum saturation voltage VCE(sat): 3V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no. Quantity in stock updated on 27/04/2025, 09:25.

Technical documentation

Equivalent products :

Quantity in stock : 122
MJE13007-CDIL

MJE13007-CDIL

NPN transistor, 8A, TO-220, TO-220AB, 400V. Collector current: 8A. Housing: TO-220. Housing (accordi...
MJE13007-CDIL
NPN transistor, 8A, TO-220, TO-220AB, 400V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 400V. Cost): 3pF. Quantity per case: 1. Semiconductor material: silicon. FT: 14 MHz. Function: switching circuits. Max hFE gain: 40. Minimum hFE gain: 8. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Bipolar Power Transistor. Tf(max): 0.7us. Tf(min): 0.23us. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Vebo: 9V. Spec info: High Speed ​​Switching. BE diode: no. CE diode: no
MJE13007-CDIL
NPN transistor, 8A, TO-220, TO-220AB, 400V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 400V. Cost): 3pF. Quantity per case: 1. Semiconductor material: silicon. FT: 14 MHz. Function: switching circuits. Max hFE gain: 40. Minimum hFE gain: 8. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Bipolar Power Transistor. Tf(max): 0.7us. Tf(min): 0.23us. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Vebo: 9V. Spec info: High Speed ​​Switching. BE diode: no. CE diode: no
Set of 1
1.51$ VAT incl.
(1.40$ excl. VAT)
1.51$
Quantity in stock : 144
MJE13007

MJE13007

NPN transistor, 8A, TO-220, TO-220AB, 400V. Collector current: 8A. Housing: TO-220. Housing (accordi...
MJE13007
NPN transistor, 8A, TO-220, TO-220AB, 400V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 400V. Cost): 80pF. Quantity per case: 1. Semiconductor material: silicon. FT: 14 MHz. Function: switching circuits. Max hFE gain: 40. Minimum hFE gain: 8. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Bipolar Power Transistor. Tf(max): 0.7us. Tf(min): 0.23us. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Vebo: 9V. Spec info: High Speed ​​Switching. BE diode: no. CE diode: no
MJE13007
NPN transistor, 8A, TO-220, TO-220AB, 400V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 400V. Cost): 80pF. Quantity per case: 1. Semiconductor material: silicon. FT: 14 MHz. Function: switching circuits. Max hFE gain: 40. Minimum hFE gain: 8. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Bipolar Power Transistor. Tf(max): 0.7us. Tf(min): 0.23us. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Vebo: 9V. Spec info: High Speed ​​Switching. BE diode: no. CE diode: no
Set of 1
2.69$ VAT incl.
(2.49$ excl. VAT)
2.69$

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