HER103, 1A, 30A, DO-41, DO-41, 200V

HER103, 1A, 30A, DO-41, DO-41, 200V

Quantity
Unit price
10-49
0.11$
50-99
0.0920$
100+
0.0832$
Equivalence available
Quantity in stock: 39
Minimum: 10

HER103, 1A, 30A, DO-41, DO-41, 200V. Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 200V. Assembly/installation: PCB through-hole mounting. Cj: 25pF. Dielectric structure: Anode-Cathode. Equivalents: HER103G. Forward voltage Vf (min): 1V. Function: high efficiency rectifier diode. MRI (max): 100uA. MRI (min): 5uA. Number of terminals: 2. Operating temperature: -65...+150°C. Semiconductor material: silicon. Threshold voltage Vf (max): 1V. Trr Diode (Min.): 50 ns. Original product from manufacturer: Taiwan Semiconductor. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 14:35

Technical documentation (PDF)
HER103
20 parameters
Forward current (AV)
1A
IFSM
30A
Housing
DO-41
Housing (according to data sheet)
DO-41
VRRM
200V
Assembly/installation
PCB through-hole mounting
Cj
25pF
Dielectric structure
Anode-Cathode
Equivalents
HER103G
Forward voltage Vf (min)
1V
Function
high efficiency rectifier diode
MRI (max)
100uA
MRI (min)
5uA
Number of terminals
2
Operating temperature
-65...+150°C
Semiconductor material
silicon
Threshold voltage Vf (max)
1V
Trr Diode (Min.)
50 ns
Original product from manufacturer
Taiwan Semiconductor
Minimum quantity
10

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