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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 1.2A, 2A, 250uA, 3.6 Ohms, TO-220, TO-220AB, 400V - IRF710

N-channel transistor, 1.2A, 2A, 250uA, 3.6 Ohms, TO-220, TO-220AB, 400V - IRF710
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.56$ 1.69$
5 - 9 1.48$ 1.60$
10 - 24 1.40$ 1.51$
25 - 49 1.33$ 1.44$
Quantity U.P
1 - 4 1.56$ 1.69$
5 - 9 1.48$ 1.60$
10 - 24 1.40$ 1.51$
25 - 49 1.33$ 1.44$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 49
Set of 1

N-channel transistor, 1.2A, 2A, 250uA, 3.6 Ohms, TO-220, TO-220AB, 400V - IRF710. N-channel transistor, 1.2A, 2A, 250uA, 3.6 Ohms, TO-220, TO-220AB, 400V. ID (T=100°C): 1.2A. ID (T=25°C): 2A. Idss (max): 250uA. On-resistance Rds On: 3.6 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 400V. C(in): 170pF. Cost): 34pF. Channel type: N. Trr Diode (Min.): 240 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 6A. IDss (min): 25uA. Pd (Power Dissipation, Max): 36W. RoHS: yes. Td(off): 12 ns. Td(on): 8 ns. Technology: Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 27/04/2025, 18:25.

Equivalent products :

Quantity in stock : 138
IRF730

IRF730

N-channel transistor, 3.3A, 5.5A, 250uA, 1 Ohm, TO-220, TO-220AB, 400V. ID (T=100°C): 3.3A. ID (T=2...
IRF730
N-channel transistor, 3.3A, 5.5A, 250uA, 1 Ohm, TO-220, TO-220AB, 400V. ID (T=100°C): 3.3A. ID (T=25°C): 5.5A. Idss (max): 250uA. On-resistance Rds On: 1 Ohm. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 400V. C(in): 700pF. Cost): 170pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 270 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 22A. IDss (min): 25uA. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 38 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
IRF730
N-channel transistor, 3.3A, 5.5A, 250uA, 1 Ohm, TO-220, TO-220AB, 400V. ID (T=100°C): 3.3A. ID (T=25°C): 5.5A. Idss (max): 250uA. On-resistance Rds On: 1 Ohm. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 400V. C(in): 700pF. Cost): 170pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 270 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 22A. IDss (min): 25uA. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 38 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
Set of 1
1.87$ VAT incl.
(1.73$ excl. VAT)
1.87$

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