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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 3.5A, 5.5A, 50uA, 0.75 Ohms, TO-220, TO-220AB, 400V - IRF730-ST

N-channel transistor, 3.5A, 5.5A, 50uA, 0.75 Ohms, TO-220, TO-220AB, 400V - IRF730-ST
Quantity excl. VAT VAT incl.
1 - 4 1.11$ 1.20$
5 - 9 1.06$ 1.15$
10 - 24 1.02$ 1.10$
25 - 49 1.00$ 1.08$
50 - 99 0.98$ 1.06$
100 - 249 0.94$ 1.02$
250+ 0.91$ 0.98$
Quantity U.P
1 - 4 1.11$ 1.20$
5 - 9 1.06$ 1.15$
10 - 24 1.02$ 1.10$
25 - 49 1.00$ 1.08$
50 - 99 0.98$ 1.06$
100 - 249 0.94$ 1.02$
250+ 0.91$ 0.98$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

N-channel transistor, 3.5A, 5.5A, 50uA, 0.75 Ohms, TO-220, TO-220AB, 400V - IRF730-ST. N-channel transistor, 3.5A, 5.5A, 50uA, 0.75 Ohms, TO-220, TO-220AB, 400V. ID (T=100°C): 3.5A. ID (T=25°C): 5.5A. Idss (max): 50uA. On-resistance Rds On: 0.75 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 400V. C(in): 530pF. Cost): 90pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 280 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: NO. Id(imp): 22A. IDss (min): 1uA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Td(off): 8 ns. Td(on): 11 ns. Technology: V-MOS. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer Stmicroelectronics. Quantity in stock updated on 15/06/2025, 19:25.

Equivalent products :

Quantity in stock : 138
IRF730

IRF730

N-channel transistor, 3.3A, 5.5A, 250uA, 1 Ohm, TO-220, TO-220AB, 400V. ID (T=100°C): 3.3A. ID (T=2...
IRF730
N-channel transistor, 3.3A, 5.5A, 250uA, 1 Ohm, TO-220, TO-220AB, 400V. ID (T=100°C): 3.3A. ID (T=25°C): 5.5A. Idss (max): 250uA. On-resistance Rds On: 1 Ohm. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 400V. RoHS: yes. C(in): 700pF. Cost): 170pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 270 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 22A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. Assembly/installation: PCB through-hole mounting. Td(off): 38 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
IRF730
N-channel transistor, 3.3A, 5.5A, 250uA, 1 Ohm, TO-220, TO-220AB, 400V. ID (T=100°C): 3.3A. ID (T=25°C): 5.5A. Idss (max): 250uA. On-resistance Rds On: 1 Ohm. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 400V. RoHS: yes. C(in): 700pF. Cost): 170pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 270 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 22A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. Assembly/installation: PCB through-hole mounting. Td(off): 38 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
1.87$ VAT incl.
(1.73$ excl. VAT)
1.87$

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