Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.46$ | 2.66$ |
5 - 9 | 2.34$ | 2.53$ |
10 - 24 | 2.21$ | 2.39$ |
25 - 49 | 2.09$ | 2.26$ |
50 - 99 | 2.04$ | 2.21$ |
100 - 221 | 1.83$ | 1.98$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.46$ | 2.66$ |
5 - 9 | 2.34$ | 2.53$ |
10 - 24 | 2.21$ | 2.39$ |
25 - 49 | 2.09$ | 2.26$ |
50 - 99 | 2.04$ | 2.21$ |
100 - 221 | 1.83$ | 1.98$ |
P-channel transistor, 23A, 250uA, TO-220, TO-220AB, 100V - IRF9540N. P-channel transistor, 23A, 250uA, TO-220, TO-220AB, 100V. ID (T=25°C): 23A. Idss (max): 250uA. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 1300pF. Cost): 400pF. Channel type: P. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 76A. ID (T=100°C): 16A. IDss (min): 25uA. Pd (Power Dissipation, Max): 140W. On-resistance Rds On: 0.117 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 51 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 27/04/2025, 17:25.
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