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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 1.3A, 2A, 500uA, 4.4 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 600V - IRFRC20

Quantity	excl. VAT	VAT incl.
1 - 4	2.16$	2.33$
5 - 9	2.05$	2.22$
10 - 24	1.94$	2.10$
25 - 49	1.83$	1.98$
50 - 99	1.79$	1.93$
100 - 249	1.65$	1.78$
250 - 272	1.57$	1.70$

Quantity	U.P
1 - 4	2.16$	2.33$
5 - 9	2.05$	2.22$
10 - 24	1.94$	2.10$
25 - 49	1.83$	1.98$
50 - 99	1.79$	1.93$
100 - 249	1.65$	1.78$
250 - 272	1.57$	1.70$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 272

Set of 1

N-channel transistor, 1.3A, 2A, 500uA, 4.4 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 600V - IRFRC20. N-channel transistor, 1.3A, 2A, 500uA, 4.4 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 600V. ID (T=100°C): 1.3A. ID (T=25°C): 2A. Idss (max): 500uA. On-resistance Rds On: 4.4 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 600V. C(in): 350pF. Cost): 48pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 290 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 8A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 42W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 27/04/2025, 19:25.

Technical documentation

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