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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 1.2A, 2A, 500uA, 4.4 Ohms, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 600V - IRFUC20

N-channel transistor, 1.2A, 2A, 500uA, 4.4 Ohms, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 600V - IRFUC20
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 1.71$ 1.85$
5 - 9 1.63$ 1.76$
10 - 24 1.54$ 1.66$
25 - 49 1.46$ 1.58$
50 - 96 1.42$ 1.54$
Quantity U.P
1 - 4 1.71$ 1.85$
5 - 9 1.63$ 1.76$
10 - 24 1.54$ 1.66$
25 - 49 1.46$ 1.58$
50 - 96 1.42$ 1.54$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 96
Set of 1

N-channel transistor, 1.2A, 2A, 500uA, 4.4 Ohms, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 600V - IRFUC20. N-channel transistor, 1.2A, 2A, 500uA, 4.4 Ohms, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 600V. ID (T=100°C): 1.2A. ID (T=25°C): 2A. Idss (max): 500uA. On-resistance Rds On: 4.4 Ohms. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Voltage Vds(max): 600V. C(in): 350pF. Cost): 48pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 8A. IDss (min): 100uA. Pd (Power Dissipation, Max): 42W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 10 ns. Technology: V-MOS. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 27/04/2025, 17:25.

Technical documentation

Equivalent products :

Quantity in stock : 272
IRFRC20

IRFRC20

N-channel transistor, 1.3A, 2A, 500uA, 4.4 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK...
IRFRC20
N-channel transistor, 1.3A, 2A, 500uA, 4.4 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 600V. ID (T=100°C): 1.3A. ID (T=25°C): 2A. Idss (max): 500uA. On-resistance Rds On: 4.4 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 600V. C(in): 350pF. Cost): 48pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 290 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 8A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 42W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no
IRFRC20
N-channel transistor, 1.3A, 2A, 500uA, 4.4 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 600V. ID (T=100°C): 1.3A. ID (T=25°C): 2A. Idss (max): 500uA. On-resistance Rds On: 4.4 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 600V. C(in): 350pF. Cost): 48pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 290 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 8A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 42W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no
Set of 1
2.33$ VAT incl.
(2.16$ excl. VAT)
2.33$

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