Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 36.15$ | 39.08$ |
2 - 2 | 34.34$ | 37.12$ |
3 - 4 | 32.53$ | 35.16$ |
5 - 9 | 30.72$ | 33.21$ |
10 - 14 | 30.00$ | 32.43$ |
15 - 19 | 29.28$ | 31.65$ |
20 - 25 | 28.19$ | 30.47$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 36.15$ | 39.08$ |
2 - 2 | 34.34$ | 37.12$ |
3 - 4 | 32.53$ | 35.16$ |
5 - 9 | 30.72$ | 33.21$ |
10 - 14 | 30.00$ | 32.43$ |
15 - 19 | 29.28$ | 31.65$ |
20 - 25 | 28.19$ | 30.47$ |
N-channel transistor, 34A, 2mA, 0.24 Ohms, PLUS247, PLUS-247 (TO247 without fixing hole), 800V - IXFX34N80. N-channel transistor, 34A, 2mA, 0.24 Ohms, PLUS247, PLUS-247 (TO247 without fixing hole), 800V. ID (T=25°C): 34A. Idss (max): 2mA. On-resistance Rds On: 0.24 Ohms. Housing: PLUS247. Housing (according to data sheet): PLUS-247 (TO247 without fixing hole). Voltage Vds(max): 800V. C(in): 7500pF. Cost): 920pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Id(imp): 136A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 560W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 45 ns. Technology: HiPerFet Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3V. Spec info: dv/dt 5V/ns. G-S Protection: no. Quantity in stock updated on 29/04/2025, 21:25.
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