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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 34A, 2mA, 0.24 Ohms, PLUS247, PLUS-247 (TO247 without fixing hole), 800V - IXFX34N80

N-channel transistor, 34A, 2mA, 0.24 Ohms, PLUS247, PLUS-247 (TO247 without fixing hole), 800V - IXFX34N80
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Quantity excl. VAT VAT incl.
1 - 1 36.15$ 39.08$
2 - 2 34.34$ 37.12$
3 - 4 33.62$ 36.34$
5 - 9 32.89$ 35.55$
10 - 14 32.53$ 35.16$
15 - 19 31.81$ 34.39$
20 - 25 30.72$ 33.21$
Quantity U.P
1 - 1 36.15$ 39.08$
2 - 2 34.34$ 37.12$
3 - 4 33.62$ 36.34$
5 - 9 32.89$ 35.55$
10 - 14 32.53$ 35.16$
15 - 19 31.81$ 34.39$
20 - 25 30.72$ 33.21$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 25
Set of 1

N-channel transistor, 34A, 2mA, 0.24 Ohms, PLUS247, PLUS-247 (TO247 without fixing hole), 800V - IXFX34N80. N-channel transistor, 34A, 2mA, 0.24 Ohms, PLUS247, PLUS-247 (TO247 without fixing hole), 800V. ID (T=25°C): 34A. Idss (max): 2mA. On-resistance Rds On: 0.24 Ohms. Housing: PLUS247. Housing (according to data sheet): PLUS-247 (TO247 without fixing hole). Voltage Vds(max): 800V. C(in): 7500pF. Cost): 920pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 136A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 560W. RoHS: yes. Spec info: dv/dt 5V/ns. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 45 ns. Technology: HiPerFet Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3V. Original product from manufacturer IXYS. Quantity in stock updated on 17/06/2025, 18:25.

Technical documentation

Equivalent products :

Quantity in stock : 40
IXFK34N80

IXFK34N80

N-channel transistor, 34A, 2mA, 0.24 Ohms, TO-264 ( TOP-3L ), TO-264AA, 800V. ID (T=25°C): 34A. Ids...
IXFK34N80
N-channel transistor, 34A, 2mA, 0.24 Ohms, TO-264 ( TOP-3L ), TO-264AA, 800V. ID (T=25°C): 34A. Idss (max): 2mA. On-resistance Rds On: 0.24 Ohms. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264AA. Voltage Vds(max): 800V. C(in): 7500pF. Cost): 920pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 136A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 560W. RoHS: yes. Spec info: dv/dt 5V/ns. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 45 ns. Technology: HiPerFet Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3V
IXFK34N80
N-channel transistor, 34A, 2mA, 0.24 Ohms, TO-264 ( TOP-3L ), TO-264AA, 800V. ID (T=25°C): 34A. Idss (max): 2mA. On-resistance Rds On: 0.24 Ohms. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264AA. Voltage Vds(max): 800V. C(in): 7500pF. Cost): 920pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 136A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 560W. RoHS: yes. Spec info: dv/dt 5V/ns. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 45 ns. Technology: HiPerFet Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3V
Set of 1
36.18$ VAT incl.
(33.47$ excl. VAT)
36.18$

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