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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 4.8A, 8A, 250uA, 0.85 Ohms, TO-220, TO-220AB, 500V - IRF840

N-channel transistor, 4.8A, 8A, 250uA, 0.85 Ohms, TO-220, TO-220AB, 500V - IRF840
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 2.87$ 3.10$
5 - 9 2.73$ 2.95$
10 - 24 2.58$ 2.79$
25 - 49 2.44$ 2.64$
50 - 99 2.38$ 2.57$
100 - 136 2.18$ 2.36$
Quantity U.P
1 - 4 2.87$ 3.10$
5 - 9 2.73$ 2.95$
10 - 24 2.58$ 2.79$
25 - 49 2.44$ 2.64$
50 - 99 2.38$ 2.57$
100 - 136 2.18$ 2.36$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 136
Set of 1

N-channel transistor, 4.8A, 8A, 250uA, 0.85 Ohms, TO-220, TO-220AB, 500V - IRF840. N-channel transistor, 4.8A, 8A, 250uA, 0.85 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 4.8A. ID (T=25°C): 8A. Idss (max): 250uA. On-resistance Rds On: 0.85 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. C(in): 1300pF. Cost): 310pF. Channel type: N. Trr Diode (Min.): 460 ns. Type of transistor: MOSFET. Id(imp): 32A. IDss (min): 25uA. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 49 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 27/04/2025, 09:25.

Technical documentation

Equivalent products :

Quantity in stock : 75
IRF840A

IRF840A

N-channel transistor, 5.1A, 8A, 250uA, 0.85 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 5.1A. ID (T...
IRF840A
N-channel transistor, 5.1A, 8A, 250uA, 0.85 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 5.1A. ID (T=25°C): 8A. Idss (max): 250uA. On-resistance Rds On: 0.85 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. C(in): 1018pF. Cost): 155pF. Channel type: N. Trr Diode (Min.): 422 ns. Type of transistor: MOSFET. Id(imp): 32A. IDss (min): 25uA. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 26 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
IRF840A
N-channel transistor, 5.1A, 8A, 250uA, 0.85 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 5.1A. ID (T=25°C): 8A. Idss (max): 250uA. On-resistance Rds On: 0.85 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. C(in): 1018pF. Cost): 155pF. Channel type: N. Trr Diode (Min.): 422 ns. Type of transistor: MOSFET. Id(imp): 32A. IDss (min): 25uA. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 26 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
Set of 1
3.04$ VAT incl.
(2.81$ excl. VAT)
3.04$

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