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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 0.6A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 160V - MMBT5551

NPN transistor, 0.6A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 160V - MMBT5551
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Quantity (Set of 10) excl. VAT VAT incl.
1 - 1 1.20$ 1.30$
2 - 2 1.14$ 1.23$
3 - 4 1.08$ 1.17$
5 - 9 1.05$ 1.14$
10 - 24 1.02$ 1.10$
25 - 49 0.96$ 1.04$
50 - 276 0.80$ 0.86$
Quantity (Set of 10) U.P
1 - 1 1.20$ 1.30$
2 - 2 1.14$ 1.23$
3 - 4 1.08$ 1.17$
5 - 9 1.05$ 1.14$
10 - 24 1.02$ 1.10$
25 - 49 0.96$ 1.04$
50 - 276 0.80$ 0.86$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 2758
Set of 10

NPN transistor, 0.6A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 160V - MMBT5551. NPN transistor, 0.6A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 160V. Collector current: 0.6A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 160V. BE diode: no. CE diode: no. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 250. Minimum hFE gain: 60. Marking on the case: G1. Equivalents: MMBT5551LT1G. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Spec info: screen printing/SMD code G1 (3S Fairchild). Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 180V. Saturation voltage VCE(sat): 0.15V. Vebo: 6V. Original product from manufacturer Yangjie Electronic Technology. Quantity in stock updated on 25/07/2025, 15:25.

Technical documentation

Equivalent products :

Quantity in stock : 1333
2N5551

2N5551

NPN transistor, TO-92, 0.6A, TO-92, 160V. Housing: TO-92. Collector current: 0.6A. Housing (accordin...
2N5551
NPN transistor, TO-92, 0.6A, TO-92, 160V. Housing: TO-92. Collector current: 0.6A. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 160V. RoHS: yes. BE diode: no. Cost): 6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: VIDEO amp.. Max hFE gain: 250. Minimum hFE gain: 80. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 180V. Saturation voltage VCE(sat): 0.15V. Maximum saturation voltage VCE(sat): 0.2V. Vebo: 6V
2N5551
NPN transistor, TO-92, 0.6A, TO-92, 160V. Housing: TO-92. Collector current: 0.6A. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 160V. RoHS: yes. BE diode: no. Cost): 6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: VIDEO amp.. Max hFE gain: 250. Minimum hFE gain: 80. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 180V. Saturation voltage VCE(sat): 0.15V. Maximum saturation voltage VCE(sat): 0.2V. Vebo: 6V
Set of 10
1.64$ VAT incl.
(1.52$ excl. VAT)
1.64$

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