Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.86$ | 0.93$ |
10 - 24 | 0.82$ | 0.89$ |
25 - 49 | 0.77$ | 0.83$ |
50 - 99 | 0.73$ | 0.79$ |
100 - 148 | 0.67$ | 0.72$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.86$ | 0.93$ |
10 - 24 | 0.82$ | 0.89$ |
25 - 49 | 0.77$ | 0.83$ |
50 - 99 | 0.73$ | 0.79$ |
100 - 148 | 0.67$ | 0.72$ |
MUR1100E. Forward current (AV): 1A. IFSM: 35A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ) ( CASE59-10 ) ( 7.3x3.4mm ). VRRM: 1000V. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast “E” Series with High Reverse. Equivalents: MUR1100ERLG. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.75V. Forward voltage Vf (min): 1.5V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 1000. Spec info: IFSM. Quantity in stock updated on 27/04/2025, 15:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.