N-channel FETs and MOSFETs

N-channel transistor, 12A, 17A, 250uA, 0.09 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 12A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.09 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 920pF. Cost): 130pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 93 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. G-S Protection: no. Id(imp): 60A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 70W. RoHS: yes. Spec info: Dynamic dv/dt Rating. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 9.2 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-220AB, 100V, 17A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 17A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF530NPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.09 Ohms @ 9A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 9.2 ns. Switch-off delay tf[nsec.]: 35 ns. Ciss Gate Capacitance [pF]: 920pF. Maximum dissipation Ptot [W]: 70W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 100V, 0.16 Ohms, TO-220. Drain-source voltage (Vds): 100V. On-resistance Rds On: 0.16 Ohms. Housing: TO-220. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 14A. Power: 75W

N-channel transistor, 20A, 28A, 250uA, 0.077 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 20A. ID (T=25°C): 28A. Idss (max): 250uA. On-resistance Rds On: 0.077 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 1700pF. Cost): 560pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 180 ns. Type of transistor: MOSFET. Function: 1.3k Ohms. G-S Protection: no. Id(imp): 110A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 53 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 23A, 33A, 250uA, 0.044 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 23A. ID (T=25°C): 33A. Idss (max): 250uA. On-resistance Rds On: 0.044 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 1960pF. Cost): 250pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 115 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 110A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 130W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 100V, 0.044 Ohms, TO-220AB. Drain-source voltage (Vds): 100V. On-resistance Rds On: 0.044 Ohms. Housing: TO-220AB. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 33A. Power: 130W

N-channel transistor, PCB soldering, TO-220AB, 100V, 33A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 33A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF540N. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.044 Ohms @ 16A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 39 ns. Ciss Gate Capacitance [pF]: 1960pF. Maximum dissipation Ptot [W]: 130W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 25A, 33A, 250uA, 0.052 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 100V. ID (T=100°C): 25A. ID (T=25°C): 33A. Idss (max): 250uA. On-resistance Rds On: 0.052 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 100V. C(in): 1400pF. Cost): 330pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 170 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 110A. IDss (min): 25uA. Equivalents: IRF540NSPBF. Number of terminals: 2. Pd (Power Dissipation, Max): 140W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 44 ns. Td(on): 8.2 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 100V, 33A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 33A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F540NS. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.044 Ohms @ 16A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 39 ns. Ciss Gate Capacitance [pF]: 1960pF. Maximum dissipation Ptot [W]: 130W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 100V, 33A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 33A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F540NS. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.044 Ohms @ 16A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 39 ns. Ciss Gate Capacitance [pF]: 1960pF. Maximum dissipation Ptot [W]: 130W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, PCB soldering, TO-220AB, 100V, 28A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 28A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF540PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.077 Ohms @ 17A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 53 ns. Ciss Gate Capacitance [pF]: 1700pF. Maximum dissipation Ptot [W]: 150W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 25A, 36A, 250uA, 21 milliOhms, TO-220, TO-220AB, 100V. ID (T=100°C): 25A. ID (T=25°C): 36A. Idss (max): 250uA. On-resistance Rds On: 21 milliOhms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 1770pF. Cost): 180pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 33 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance, <0.021 Ohms. G-S Protection: no. Id(imp): 140A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 92W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 43 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 2.1A, 3.3A, 250uA, 1.5 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 2.1A. ID (T=25°C): 3.3A. Idss (max): 250uA. On-resistance Rds On: 1.5 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 140pF. Cost): 53pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 10A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 36W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 14 ns. Td(on): 8.2 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 2.1A, 3.3A, 3.3A, 1.16 Ohms, TO-220, TO-220, 200V. ID (T=100°C): 2.1A. ID (T=25°C): 3.3A. Idss (max): 3.3A. On-resistance Rds On: 1.16 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 200V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: VGS @10V. Pd (Power Dissipation, Max): 38W. Assembly/installation: PCB through-hole mounting

N-channel transistor, PCB soldering, TO-220AB, 200V, 3.3A, 36W. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 3.3A. Housing (JEDEC standard): 36W. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF610PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.5 Ohms @ 2A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 8.2 ns. Switch-off delay tf[nsec.]: 11 ns. Ciss Gate Capacitance [pF]: 140pF. Maximum dissipation Ptot [W]: 36W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 3.3A, 5.2A, 250uA, 0.8 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 3.3A. ID (T=25°C): 5.2A. Idss (max): 250uA. On-resistance Rds On: 0.8 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 260pF. Cost): 100pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 18A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 19 ns. Td(on): 7.2 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-220AB, 200V, 5.2A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 5.2A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF620PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.8 Ohms @ 3.1A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 7.2 ns. Switch-off delay tf[nsec.]: 19 ns. Ciss Gate Capacitance [pF]: 260pF. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering, TO-220AB, 200V, 9A, 50, 0.35 Ohms, TO-220, TO-220, 200V. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 9A. Housing (JEDEC standard): 50. On-resistance Rds On: 0.35 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 200V. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF630. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.35 Ohms @ 4.5A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 15 ns. Ciss Gate Capacitance [pF]: 540pF. Maximum dissipation Ptot [W]: 75W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Pd (Power Dissipation, Max): 75W. Assembly/installation: PCB through-hole mounting. Td(off): 12 ns. Td(on): 10 ns. Technology: MESH OVERLAY MOSFET. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 5.7A, 9A, 9A, 0.34 Ohms, TO-220, TO-220, 200V. ID (T=100°C): 5.7A. ID (T=25°C): 9A. Idss (max): 9A. On-resistance Rds On: 0.34 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 200V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 36A. Pd (Power Dissipation, Max): 72W. Assembly/installation: PCB through-hole mounting. Technology: N-Channel MOSFET

N-channel transistor, PCB soldering, TO-220AB, 200V, 9A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 9A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF630N. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.4 Ohms @ 5.4A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 7.9 ns. Switch-off delay tf[nsec.]: 27 ns. Ciss Gate Capacitance [pF]: 575pF. Maximum dissipation Ptot [W]: 74W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, PCB soldering, TO-220AB, 200V, 9A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 9A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF630PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.4 Ohms @ 5.4A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 9.4 ns. Switch-off delay tf[nsec.]: 39 ns. Ciss Gate Capacitance [pF]: 800pF. Maximum dissipation Ptot [W]: 74W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 5.1A, 8.1A, 250uA, 0.45 Ohms, TO-220, TO-220AB, 250V. ID (T=100°C): 5.1A. ID (T=25°C): 8.1A. Idss (max): 250uA. On-resistance Rds On: 0.45 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 250V. C(in): 770pF. Cost): 190pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 220 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 32A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 74W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 4.2 ns. Td(on): 9.6 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 5.1A, 8.1A, 8.1A, 0.348 Ohms, TO-220, TO-220, 250V. ID (T=100°C): 5.1A. ID (T=25°C): 8.1A. Idss (max): 8.1A. On-resistance Rds On: 0.348 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 250V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 74W. Assembly/installation: PCB through-hole mounting. Technology: V-MOS

N-channel transistor, 11A, 18A, 250uA, 0.18 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 11A. ID (T=25°C): 18A. Idss (max): 250uA. On-resistance Rds On: 0.18 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 1300pF. Cost): 430pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 72A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/emitter voltage VGE(th)max.: 4 v. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V

N-channel transistor, 13A, 18A, 250uA, 0.15 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 13A. ID (T=25°C): 18A. Idss (max): 250uA. On-resistance Rds On: 0.15 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 1160pF. Cost): 185pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 167 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 72A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 23 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V