N-channel FETs and MOSFETs

N-channel transistor, 200V, TO220. Vdss (Drain to Source Voltage): 200V. Housing: TO220. Polarity: MOSFET N. Id @ Tc=25°C (Continuous Drain Current): 18A. Drive Voltage: 10V. Gate/source voltage Vgs max: -20V. Pd (Power Dissipation, Max): 150W. Mounting Type: THT

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 200V, 18A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 18A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F640NS. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.15 Ohms @ 11A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 23 ns. Ciss Gate Capacitance [pF]: 1160pF. Maximum dissipation Ptot [W]: 150W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 200V, TO220. Vdss (Drain to Source Voltage): 200V. Housing: TO220. Polarity: MOSFET N. Id @ Tc=25°C (Continuous Drain Current): 18A. Drive Voltage: 10V. Gate/source voltage Vgs max: -20V. Pd (Power Dissipation, Max): 40W. Mounting Type: THT

N-channel transistor, 8.5A, 14A, 250uA, 0.28 Ohms, TO-220, TO-220AB, 250V. ID (T=100°C): 8.5A. ID (T=25°C): 14A. Idss (max): 250uA. On-resistance Rds On: 0.28 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 250V. C(in): 1300pF. Cost): 330pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 56A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 53 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 4.5A, 5.7A, 5.7A, 0.028 Ohms, 100V. ID (T=100°C): 4.5A. ID (T=25°C): 5.7A. Idss (max): 5.7A. On-resistance Rds On: 0.028 Ohms. Voltage Vds(max): 100V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: td(on) 9.2ns, td(off) 18ns. Id(imp): 45A. Note: isometric. Pd (Power Dissipation, Max): 42W. Technology: DirectFET POWER MOSFET

N-channel transistor, 1.2A, 2A, 250uA, 3.6 Ohms, TO-220, TO-220AB, 400V. ID (T=100°C): 1.2A. ID (T=25°C): 2A. Idss (max): 250uA. On-resistance Rds On: 3.6 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 400V. C(in): 170pF. Cost): 34pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 240 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 6A. IDss (min): 25uA. Pd (Power Dissipation, Max): 36W. RoHS: yes. Td(off): 12 ns. Td(on): 8 ns. Technology: Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering (SMD), SO8, 20V, 3.5A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 20V. Drain Current Id [A] @ 25°C: 3.5A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7101. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ 1.8A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 7 ns. Switch-off delay tf[nsec.]: 24 ns. Ciss Gate Capacitance [pF]: 320pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 3A, SO, SO-8, 50V. ID (T=25°C): 3A. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 50V. Channel type: N. Drain-source protection : yes. Quantity per case: 2. Function: 2xN-CH 50V. G-S Protection: no. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET

N-channel transistor, PCB soldering (SMD), SO8, 50V, 3A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 50V. Drain Current Id [A] @ 25°C: 3A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7103. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.13 Ohms @ 3A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 70 ns. Ciss Gate Capacitance [pF]: 290pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, TO-220AB, 400V, 2A, PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 400V. Drain Current Id [A] @ 25°C: 2A. Housing: PCB soldering. Number of terminals: 3. Manufacturer's marking: IRF710PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 3.6 Ohms @ 1.2A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 8 ns. Switch-off delay tf[nsec.]: 21 ns. Ciss Gate Capacitance [pF]: 170pF. Maximum dissipation Ptot [W]: 36W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting

N-channel transistor, PCB soldering (SMD), SO8, 30 v, 7.3A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 7.3A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7201. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.03 Ohms @ 7.3A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 7 ns. Switch-off delay tf[nsec.]: 21 ns. Ciss Gate Capacitance [pF]: 550pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering, TO-220AB, 400V, 3.3A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 400V. Drain Current Id [A] @ 25°C: 3.3A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF720PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.8 Ohms @ 2A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 30 ns. Ciss Gate Capacitance [pF]: 410pF. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 3.3A, 5.5A, 250uA, 1 Ohm, TO-220, TO-220AB, 400V. ID (T=100°C): 3.3A. ID (T=25°C): 5.5A. Idss (max): 250uA. On-resistance Rds On: 1 Ohm. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 400V. RoHS: yes. C(in): 700pF. Cost): 170pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 270 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 22A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. Assembly/installation: PCB through-hole mounting. Td(off): 38 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering (SMD), SO8, 20V, 4.1A/4.1A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 20V. Drain Current Id [A] @ 25°C: 4.1A/4.1A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7301. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.05 Ohms/0.05 Ohms @ 2.6A/2.6A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 9 ns. Switch-off delay tf[nsec.]: 32 ns. Ciss Gate Capacitance [pF]: 660pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 3.9A, 4.9A, 25uA, SO, SO-8, 30 v. ID (T=100°C): 3.9A. ID (T=25°C): 4.9A. Idss (max): 25uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Channel type: N. Quantity per case: 2. Type of transistor: MOSFET. Function: 0.05R. Id(imp): 20A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: N&N-HEXFET Power MOSFETFET

N-channel transistor, PCB soldering (SMD), SO8, 30V/-30V, 4A/-3A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30V/-30V. Drain Current Id [A] @ 25°C: 4A/-3A. RoHS: yes. Component family: MOSFET, N-MOS, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7309. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.05 Ohms/0.1 Ohms @ 2.4/-1.8A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 6.8/11 ns. Switch-off delay tf[nsec.]: 22/25 ns. Ciss Gate Capacitance [pF]: 520/440pF. Maximum dissipation Ptot [W]: 1.4W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 400V, TO220AB. Vdss (Drain to Source Voltage): 400V. Housing: TO220AB. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Series: yes. Polarity: MOSFET N. Id @ Tc=25°C (Continuous Drain Current): 5.5A. Drive Voltage: 10V. Rds On (Max) @ Id, Vgs: 1 Ohms / 3A / 10V. Vgs(th) (Max) @ Id: 3. Qg (Total Gate Charge, Max @ Vgs): IRF730PBF. Gate/source voltage Vgs max: -20V. Pd (Power Dissipation, Max): 75W. Operating temperature: 1 Ohms @ 3.3A. Mounting Type: THT. Features: 38 ns. Information: 700pF. MSL: 74W

N-channel transistor, SO, SO-8. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: N MOSFET transistor. Number of terminals: 8. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET

N-channel transistor, SO, SO-8. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: N MOSFET transistor. Equivalents: IRF7313PBF. Number of terminals: 8. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET

N-channel transistor, PCB soldering (SMD), SO8, 30 v, 6.5A/6.5A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 6.5A/6.5A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7313. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.029 Ohms/0.029 Ohms @ 5.8A/5.8A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 39 ns. Ciss Gate Capacitance [pF]: 650pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SO8, 30V/-30V, 6.6A / -5.3A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30V/-30V. Drain Current Id [A] @ 25°C: 6.6A / -5.3A. RoHS: yes. Component family: MOSFET, N-MOS, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7317. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.029 Ohms/0.058 Ohms @ 6/-2.9A. Switch-on time ton [nsec.]: 12/22 ns. Switch-off delay tf[nsec.]: 57/63 ns. Ciss Gate Capacitance [pF]: 900/780pF. Maximum dissipation Ptot [W]: 1.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, SO, SO-8. Housing: SO. Housing (according to data sheet): SO-8. Pd (Power Dissipation, Max): 2W. Channel type: N. Conditioning: plastic tube. Conditioning unit: 95. Quantity per case: 2. Function: tf 13ns, td(on) 8.3ns, td(off) 32ns. Number of terminals: 8. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET

ROHS: Yes. Housing: SO8. Assembly/installation: SMD. Type of transistor: N-MOSFET x2. Polarity: unipolar. Technology: HEXFET®. Drain-source voltage: 55V. Drain current: 4.7A. On-state resistance: 50m Ohms. Gate-source voltage: ±20V. Power: 2W

N-channel transistor, PCB soldering (SMD), SO8, 55V/-55V, 4.7A/-3.4A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 55V/-55V. Drain Current Id [A] @ 25°C: 4.7A/-3.4A. RoHS: yes. Component family: MOSFET, N-MOS, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7343. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.05 Ohms/0.105 Ohms @ 4.7/-3.4A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 12/22 ns. Switch-off delay tf[nsec.]: 48/64 ns. Ciss Gate Capacitance [pF]: 740/690pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, SO8, -55V. Housing: SO8. Vdss (Drain to Source Voltage): -55V. Series: HEXFET. Polarity: MOSFET N+P. Id @ Tc=25°C (Continuous Drain Current): 3.4A. Gate/source voltage Vgs max: -20V. Pd (Power Dissipation, Max): 2W. Mounting Type: SMD