N-channel FETs and MOSFETs

N-channel transistor, 70V, Internally limited, 200uA, 0.028 Ohms, TO-220, TO-220AB. Voltage Vds(max): 70V. ID (T=25°C): Internally limited. Idss (max): 200uA. On-resistance Rds On: 0.028 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Used for: Ilim= 35A IR= -50A. Vin input voltage (max): 18V. Cost): 980pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. Function: 'Fully autoprotected driver switch'. IDss (min): 50uA. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. Spec info: Linear Current Limitation. Td(off): 650 ns. Td(on): 100 ns. Technology: OMNIFET

N-channel transistor, PCB soldering, TO-220AB, 70V, 5A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 70V. Drain Current Id [A] @ 25°C: 5A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: VNP5N07-E. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.2 Ohms @ 2.5A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 100 ns. Switch-off delay tf[nsec.]: 250 ns. Maximum dissipation Ptot [W]: 31W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +135°C

N-channel transistor, 3.5A, 75uA, 0.12 Ohms, SO, SO-8, 45V. ID (T=25°C): 3.5A. Idss (max): 75uA. On-resistance Rds On: 0.12 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 45V. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 107ns. Type of transistor: MOSFET. IDss (min): 30uA. Note: screen printing/SMD code S3NV04DP. Marking on the case: S3NV04DP. Pd (Power Dissipation, Max): 4W. Assembly/installation: surface-mounted component (SMD). Td(off): 450 ns. Td(on): 90 ns. Technology: OMNIFET II fully autoprotected Power MOSFET

N-channel transistor, PCB soldering, TO-220AB, 650V, 38A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 650V. Drain Current Id [A] @ 25°C: 38A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.099 Ohms @ 15A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 53 ns. Switch-off delay tf[nsec.]: 193 ns. Ciss Gate Capacitance [pF]: 2940pF. Maximum dissipation Ptot [W]: 277W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 10A, 10A, 0.4 Ohms, TO-220FP, TO-220F, 200V. ID (T=25°C): 10A. Idss (max): 10A. On-resistance Rds On: 0.4 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 200V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Number of terminals: 3. Assembly/installation: PCB through-hole mounting. Technology: Advanced Power MOSFET

ROHS: Yes. Housing: SOT223. Power: 2W. Assembly/installation: SMD. Type of transistor: N-MOSFET. Polarity: unipolar. Drain-source voltage: 60V. Drain current: 700mA, 0.7A. On-state resistance: 2 Ohms. Gate-source voltage: ±20V. Channel type: 'enhanced'

N-channel transistor, PCB soldering (SMD), SOT-23, 60V, 0.15A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 0.15A. RoHS: no. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: ZVN3306F. Drain current through resistor Rds [Ohm] @ Ids [A]: 5 Ohms @ 0.5A. Gate breakdown voltage Ugs [V]: 2.4V. Switch-on time ton [nsec.]: 5 ns. Switch-off delay tf[nsec.]: 6 ns. Ciss Gate Capacitance [pF]: 35pF. Maximum dissipation Ptot [W]: 0.33W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Housing: TO92. Assembly/installation: THT. Type of transistor: N-MOSFET. Polarity: unipolar. Drain-source voltage: 60V. Drain current: 0.6A. On-state resistance: 1 Ohms. Gate-source voltage: ±20V. Power: 0.7W. Channel type: 'enhanced'

N-channel transistor, 0.18A, 0.18A, 10 Ohms, TO-92, TO-92, 200V. ID (T=25°C): 0.18A. Idss (max): 0.18A. On-resistance Rds On: 10 Ohms. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 200V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Logic-Level. Pd (Power Dissipation, Max): 0.7W. Assembly/installation: PCB through-hole mounting. Technology: ENHANCEMENT MODE VERTICAL DMOS FET

N-channel transistor, 3A, 3.8A, 1uA, 0.13 Ohms, SOT-223 ( TO-226 ), SOT-223, 70V. ID (T=100°C): 3A. ID (T=25°C): 3.8A. Idss (max): 1uA. On-resistance Rds On: 0.13 Ohms. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Voltage Vds(max): 70V. C(in): 298pF. Cost): 35pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 10A. IDss (min): 0uA. Number of terminals: 3. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 11.5 ns. Td(on): 1.9 ns. Technology: 'Enhancement Mode MOSFET'. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V