N-channel FETs and MOSFETs

N-channel transistor, 12.6A, 20A, 100uA, 0.135 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 12.6A. ID (T=25°C): 20A. Idss (max): 100uA. On-resistance Rds On: 0.135 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. C(in): 1800pF. Cost): 115pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 450 ns. Type of transistor: MOSFET. Function: switching circuits. G-S Protection: no. Id(imp): 80A. IDss (min): 1uA. Marking on the case: 26NM60N. Number of terminals: 3. Pd (Power Dissipation, Max): 140W. RoHS: yes. Spec info: Low input capacitance and gate charge. Assembly/installation: PCB through-hole mounting. Td(off): 13 ns. Td(on): 85 ns. Technology: MDmesh PpwerMOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 25A, 35A, 10uA, 0.038 Ohms, TO-220, TO-220, 100V. ID (T=100°C): 25A. ID (T=25°C): 35A. Idss (max): 10uA. On-resistance Rds On: 0.038 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 100V. C(in): 1180pF. Cost): 180pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 110us. Diode threshold voltage: 1.3V. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 140A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 115W. RoHS: yes. Spec info: Low Input Charge. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 15 ns. Technology: STripFET II POWER MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 21A, 30A, 10uA, 0.032 Ohms, TO-220, TO-220, 60V. ID (T=100°C): 21A. ID (T=25°C): 30A. Idss (max): 10uA. On-resistance Rds On: 0.032 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. C(in): 690pF. Cost): 170pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: trr 65ns, efficient dv/dt. Id(imp): 60.4k Ohms. IDss (min): 1uA. Marking on the case: P36NF06. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 27 ns. Td(on): 10 ns. Technology: STripFET II POWER MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 12A, 18A, 18A, 0.032 Ohms, TO-220FP, TO-220FP, 60V. ID (T=100°C): 12A. ID (T=25°C): 18A. Idss (max): 18A. On-resistance Rds On: 0.032 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 60V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: trr 65ns, efficient dv/dt. Id(imp): 72A. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Technology: STripFET II POWER MOSFET

N-channel transistor, PCB soldering, TO-220AB, 60V, 30A, 60.4k Ohms. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 30A. Housing (JEDEC standard): 60.4k Ohms. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: P36NF06L. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.04 Ohms @ 15A. Gate breakdown voltage Ugs [V]: 2.5V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 19 ns. Ciss Gate Capacitance [pF]: 660pF. Maximum dissipation Ptot [W]: 70W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 1.8A, 2.9A, 2.9A, 4 Ohms, TO-220, 600V. ID (T=100°C): 1.8A. ID (T=25°C): 2.9A. Idss (max): 2.9A. On-resistance Rds On: 4 Ohms. Housing: TO-220. Voltage Vds(max): 600V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 80W. Assembly/installation: PCB through-hole mounting. Technology: V-MOS

N-channel transistor, 2.1A, 3.3A, 50uA, 3.3 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 2.1A. ID (T=25°C): 3.3A. Idss (max): 50uA. On-resistance Rds On: 3.3 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. C(in): 400pF. Cost): 57pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. G-S Protection: no. Id(imp): 13.2A. IDss (min): 1uA. Marking on the case: P3NB60. Pd (Power Dissipation, Max): 80W. Assembly/installation: PCB through-hole mounting. Td(off): 11 ns. Td(on): 11 ns. Technology: PowerMESH™ MOSFET. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 1.6A, 2.6A, 50uA, 4.6 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 1.6A. ID (T=25°C): 2.6A. Idss (max): 50uA. On-resistance Rds On: 4.6 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. C(in): 440pF. Cost): 60pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 650 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. G-S Protection: no. Id(imp): 10.4A. IDss (min): 1uA. Pd (Power Dissipation, Max): 90W. Assembly/installation: PCB through-hole mounting. Td(off): 15 ns. Td(on): 15 ns. Technology: PowerMESH™ MOSFET. Gate/source voltage Vgs: 20V. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 3.5A, 3.5A, TO-220FP, TO-220FP, 900V. ID (T=25°C): 3.5A. Idss (max): 3.5A. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 900V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Zener-Protected. Assembly/installation: PCB through-hole mounting. Technology: PowerMESH III

N-channel transistor, 2.4A, 2.4A, 3.3 Ohms, TO-220FP, TO-220FP, 600V, 600V, 3.6 Ohms. ID (T=25°C): 2.4A. Idss (max): 2.4A. On-resistance Rds On: 3.3 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. Drain-source voltage (Vds): 600V. On-resistance Rds On: 3.6 Ohms. Channel type: N. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Technology: SuperMESH Power MOSFET. Type of transistor: MOSFET power transistor. Max drain current: 2.4A

N-channel transistor, 1.57A, 2.5A, 50uA, 3.8 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 1.57A. ID (T=25°C): 2.5A. Idss (max): 50uA. On-resistance Rds On: 3.8 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. C(in): 485pF. Cost): 57pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 384 ns. Type of transistor: MOSFET. Function: very high dv/dt ratio, for switching applications. G-S Protection: yes. Id(imp): 10A. IDss (min): 1uA. Marking on the case: P3NK80Z. Pd (Power Dissipation, Max): 70W. Assembly/installation: PCB through-hole mounting. Td(off): 36ns. Td(on): 17 ns. Technology: SuperMESH™ Power MOSFET. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V

N-channel transistor, 1.89A, 3A, 50uA, 3.6 Ohms, TO-220FP, TO-220FP, 900V. ID (T=100°C): 1.89A. ID (T=25°C): 3A. Idss (max): 50uA. On-resistance Rds On: 3.6 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 900V. C(in): 590pF. Cost): 63pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 510 ns. Type of transistor: MOSFET. Function: Zener-Protected. G-S Protection: yes. Id(imp): 12A. IDss (min): 1uA. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 18 ns. Technology: SuperMESH Power MOSFET. Operating temperature: -55°C to +150°C. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) max.: 4.5V. Gate/source voltage (off) min.: 3V

N-channel transistor, 2A, 4A, 50uA, 3 Ohms, 800V. ID (T=100°C): 2A. ID (T=25°C): 4A. Idss (max): 50uA. On-resistance Rds On: 3 Ohms. Voltage Vds(max): 800V. C(in): 700pF. Cost): 95pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 600 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. G-S Protection: no. Id(imp): 16A. IDss (min): 1uA. Pd (Power Dissipation, Max): 100W. Td(off): 12 ns. Td(on): 14 ns. Technology: PowerMESH MOSFET. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 2.4A, 4A, 50uA, 3 Ohms, TO-220FP, TO-220FP, 800V. ID (T=100°C): 2.4A. ID (T=25°C): 4A. Idss (max): 50uA. On-resistance Rds On: 3 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 800V. C(in): 700pF. Cost): 95pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 600 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 16A. IDss (min): 1uA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 35W. Assembly/installation: PCB through-hole mounting. Td(off): 12 ns. Td(on): 14 ns. Technology: PowerMESH MOSFET. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, PCB soldering, TO-220AB, 500V, 3A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 3A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: P4NK50Z. Drain current through resistor Rds [Ohm] @ Ids [A]: 2.7 Ohms @ 1.5A. Gate breakdown voltage Ugs [V]: 4.5V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 21 ns. Ciss Gate Capacitance [pF]: 310pF. Maximum dissipation Ptot [W]: 45W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 2.5A, 4A, 4A, 1.76 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 2.5A. ID (T=25°C): 4A. Idss (max): 4A. On-resistance Rds On: 1.76 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Zener-Protected, Power MOSFET transistor. Id(imp): 16A. Pd (Power Dissipation, Max): 70W. Assembly/installation: PCB through-hole mounting. Technology: SuperMESH

N-channel transistor, 4A, 4A, TO-220FP, TO-220FP, 600V. ID (T=25°C): 4A. Idss (max): 4A. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Zener-Protected, Power MOSFET transistor. Assembly/installation: PCB through-hole mounting. Technology: SuperMESH

N-channel transistor, 1.89A, 3A, 3A, 3 Ohms, TO-220FP, TO-220FP, 800V. ID (T=100°C): 1.89A. ID (T=25°C): 3A. Idss (max): 3A. On-resistance Rds On: 3 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 800V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Zener-Protected, Power MOSFET transistor. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Technology: SuperMESH

N-channel transistor, 39A, 55A, 10uA, 0.019 Ohms, TO-220, TO-220, 60V. ID (T=100°C): 39A. ID (T=25°C): 55A. Idss (max): 10uA. On-resistance Rds On: 0.019 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. C(in): 3050pF. Cost): 380pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 110 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 220A. IDss (min): 1uA. Marking on the case: P55NE06. Number of terminals: 3. Temperature: +175°C. Pd (Power Dissipation, Max): 130W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(on): 30 ns. Technology: power MOSFET transistor. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 35A, 50A, 10uA, 0.015 Ohms, TO-220, TO-220, 60V. ID (T=100°C): 35A. ID (T=25°C): 50A. Idss (max): 10uA. On-resistance Rds On: 0.015 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. C(in): 1300pF. Cost): 300pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 75 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 200A. IDss (min): 1uA. Marking on the case: P55NF06. Number of terminals: 3. Pd (Power Dissipation, Max): 110W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 36ns. Td(on): 20 ns. Technology: STripFET II POWER MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 39A, 55A, 10uA, 0.016 Ohms, TO-220, TO-220, 60V. ID (T=100°C): 39A. ID (T=25°C): 55A. Idss (max): 10uA. On-resistance Rds On: 0.016 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. C(in): 1700pF. Cost): 300pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 220A. IDss (min): 1uA. Marking on the case: P55NF06L. Number of terminals: 3. Pd (Power Dissipation, Max): 95W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 40ms. Td(on): 20ms. Technology: STripFET II POWER MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 16V. Vgs(th) max.: 1.7V. Vgs(th) min.: 1V

N-channel transistor, PCB soldering, TO-220AB, 1 kV, 3.5A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 1 kV. Drain Current Id [A] @ 25°C: 3.5A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: P5NK100Z. Drain current through resistor Rds [Ohm] @ Ids [A]: 3.7 Ohms @ 1.75A. Gate breakdown voltage Ugs [V]: 4.5V. Switch-on time ton [nsec.]: 23 ns. Switch-off delay tf[nsec.]: 52 ns. Ciss Gate Capacitance [pF]: 1154pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 3.6A, 5A, 50uA, 1.2 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 3.6A. ID (T=25°C): 5A. Idss (max): 50uA. On-resistance Rds On: 1.2 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 690pF. Cost): 90pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 485 ns. Type of transistor: MOSFET. Function: Zener-Protected, Power MOSFET transistor. G-S Protection: yes. Id(imp): 20A. IDss (min): 1uA. Marking on the case: P5NK60ZFP. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. RoHS: yes. Spec info: -55°C...+150°C. Assembly/installation: PCB through-hole mounting. Td(off): 36ns. Td(on): 16 ns. Technology: SuperMESH Power MOSFET. Operating temperature: -55...+ °C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V

N-channel transistor, 2.7A, 4.3A, 50uA, 1.9 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 2.7A. ID (T=25°C): 4.3A. Idss (max): 50uA. On-resistance Rds On: 1.9 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. C(in): 910pF. Cost): 98pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Function: Zener-Protected, Power MOSFET transistor. G-S Protection: yes. Id(imp): 17.2A. IDss (min): 1uA. Marking on the case: P5NK80Z. Pd (Power Dissipation, Max): 110W. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 18 ns. Technology: SuperMESH Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V

N-channel transistor, 2.7A, 4.3A, 50uA, 1.9 Ohms, TO-220FP, TO-220FP, 800V, 800V, TO-220FP (TO-220-F) FULLPAK HV. ID (T=100°C): 2.7A. ID (T=25°C): 4.3A. Idss (max): 50uA. On-resistance Rds On: 1.9 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 800V. Drain-source voltage (Vds): 800V. Housing: TO-220FP (TO-220-F) FULLPAK HV. Channel type: N. Function: Zener-Protected, Power MOSFET transistor. G-S Protection: yes. Id(imp): 17.2A. IDss (min): 1uA. Marking on the case: P5NK80ZFP. Pd (Power Dissipation, Max): 30W. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 18 ns. Technology: SuperMESH Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Type of transistor: MOSFET power transistor. Max drain current: 4.3A. Power: 110W