N-channel FETs and MOSFETs

N-channel transistor, 6.93A, 11A, 100uA, D-PAK ( TO-252 ), TO-252 ( DPAK ), 650V. ID (T=100°C): 6.93A. ID (T=25°C): 11A. Idss (max): 100uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ). Voltage Vds(max): 650V. C(in): 790pF. Cost): 70pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 290 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 44A. IDss (min): 1uA. Marking on the case: 13NM60N. Number of terminals: 2. Pd (Power Dissipation, Max): 90W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 3 ns. Technology: MDmesh™ II Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 1.57A, 2.5A, 50mA, 3.8 Ohms, TO-251 ( I-Pak ), TO-251 ( I-Pak ), 800V. ID (T=100°C): 1.57A. ID (T=25°C): 2.5A. Idss (max): 50mA. On-resistance Rds On: 3.8 Ohms. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251 ( I-Pak ). Voltage Vds(max): 800V. C(in): 485pF. Cost): 57pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 75. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 384 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. G-S Protection: yes. Id(imp): 10A. IDss (min): 1uA. Marking on the case: D3NK80Z. Number of terminals: 2. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 36ns. Td(on): 17 ns. Technology: Zener-protected SuperMESH™ Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V

N-channel transistor, 1.57A, 2.5A, 50mA, 3.8 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 800V. ID (T=100°C): 1.57A. ID (T=25°C): 2.5A. Idss (max): 50mA. On-resistance Rds On: 3.8 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 800V. C(in): 485pF. Cost): 57pF. Channel type: N. Conditioning: roll. Conditioning unit: 2000. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 384 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. G-S Protection: yes. Id(imp): 10A. IDss (min): 1uA. Marking on the case: D3NK80Z. Number of terminals: 2. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 36ns. Td(on): 17 ns. Technology: Zener-protected SuperMESH™ Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V

N-channel transistor, 1.9A, 3A, 1uA, 3A, 2.3 Ohms, D-PAK ( TO-252 ), TO-252 ( D-PAK ), 500V. ID (T=100°C): 1.9A. ID (T=25°C): 3A. Idss: 1uA. Idss (max): 3A. On-resistance Rds On: 2.3 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( D-PAK ). Voltage Vds(max): 500V. C(in): 310pF. Cost): 49pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 260 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. G-S Protection: yes. Id(imp): 12A. Marking on the case: D4NK50Z. Pd (Power Dissipation, Max): 45W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 21 ns. Td(on): 10 ns. Technology: Zener-protected SuperMESH™ Power MOSFET

N-channel transistor, 2.5A, 4A, 1uA, 4A, 1.76 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ) ( DPAK-5 ), 600V. ID (T=100°C): 2.5A. ID (T=25°C): 4A. Idss: 1uA. Idss (max): 4A. On-resistance Rds On: 1.76 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ) ( DPAK-5 ). Voltage Vds(max): 600V. C(in): 510pF. Cost): 47pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. G-S Protection: yes. Id(imp): 16A. Marking on the case: D4NK60Z. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 29 ns. Td(on): 12 ns. Technology: Zener-protected SuperMESH™ Power MOSFET

N-channel transistor, 2.77A, 4.4A, 50uA, 1.2 Ohms, D-PAK ( TO-252 ), TO-252-3, 525V. ID (T=100°C): 2.77A. ID (T=25°C): 4.4A. Idss (max): 50uA. On-resistance Rds On: 1.2 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252-3. Voltage Vds(max): 525V. C(in): 545pF. Cost): 45pF. Channel type: N. Number of channels: 1. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 240 ns. Type of transistor: MOSFET. Function: Switching applications, Gate charge minimized, Low IDSS. G-S Protection: yes. Id(imp): 17.6A. IDss (min): 5uA. Marking on the case: 5N52K3. Pd (Power Dissipation, Max): 70W. Spec info: Enhancement type. Assembly/installation: surface-mounted component (SMD). Td(off): 29 ns. Td(on): 9 ns. Technology: SuperMESH3™ Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30V. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V

N-channel transistor, 2.8A, 4.4A, 500uA, 1.25 Ohms, D-PAK ( TO-252 ), TO-252-3, 525V. ID (T=100°C): 2.8A. ID (T=25°C): 4.4A. Idss (max): 500uA. On-resistance Rds On: 1.25 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252-3. Voltage Vds(max): 525V. C(in): 529pF. Cost): 71pF. Channel type: N. Number of channels: 1. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. Function: Switching applications, Gate charge minimized. G-S Protection: yes. Id(imp): 17.6A. IDss (min): 10uA. Marking on the case: 5N52U. Pd (Power Dissipation, Max): 70W. Spec info: Enhancement type. Assembly/installation: surface-mounted component (SMD). Td(off): 23.1 ns. Td(on): 11.4 ns. Technology: UltraFASTmesh™ Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30V. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V

N-channel transistor, 3A, 5A, 100uA, 0.84 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 600V. ID (T=100°C): 3A. ID (T=25°C): 5A. Idss (max): 100uA. On-resistance Rds On: 0.84 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 600V. C(in): 363pF. Cost): 24.6pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 213 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. G-S Protection: no. Id(imp): 20A. IDss (min): 1uA. Marking on the case: 7NM60N. Number of terminals: 2. Pd (Power Dissipation, Max): 45W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 26 ns. Td(on): 7 ns. Technology: Cool Mos POWER transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 33A, 53A, 53A, 0.07 Ohms, ISOTOP ( SOT227B ), ISOTOP ( SOT227B ), 500V. ID (T=100°C): 33A. ID (T=25°C): 53A. Idss (max): 53A. On-resistance Rds On: 0.07 Ohms. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP ( SOT227B ). Voltage Vds(max): 500V. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. Function: SMPS POWER MOSFET. Id(imp): 212A. Pd (Power Dissipation, Max): 460W. Assembly/installation: PCB through-hole mounting. Electrical insulation: 2500V (AC-RMS). Td(on): 46 ns. Technology: PowerMesh II MOSFET. Tf (type): 38 ns. Tr: 70 ns. Operating temperature: -65...150°C. Gate/source voltage Vgs: ±30V

N-channel transistor, 6.3A, 10A, 100uA, 0.37 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 6.3A. ID (T=25°C): 10A. Idss (max): 100uA. On-resistance Rds On: 0.37 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 850pF. Cost): 44pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Function: LOW INPUT CAPACITANCE, RESISTANCE AND GATE CHARGE. G-S Protection: no. Id(imp): 40A. IDss (min): 1uA. Marking on the case: 11NM60ND. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. RoHS: yes. Spec info: HIGH dv/dt AND AVALANCHE CAPABILITIES. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 16 ns. Technology: MDmesh II POWER MOSFET. Gate/source voltage Vgs: 25V. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 7.6A, 12A, 50uA, 0.37 Ohms, TO-220FP, TO-220FP, 800V. ID (T=100°C): 7.6A. ID (T=25°C): 12A. Idss (max): 50uA. On-resistance Rds On: 0.37 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 800V. C(in): 870pF. Cost): 50pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 600 ns. Type of transistor: MOSFET. Function: switching circuits. G-S Protection: yes. Id(imp): 48A. IDss (min): 1uA. Marking on the case: 13N80K5. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 42 ns. Td(on): 16 ns. Technology: Zener-protected SuperMESH™ Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 8.2A, 11A, 100uA, 0.28 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 8.2A. ID (T=25°C): 11A. Idss (max): 100uA. On-resistance Rds On: 0.28 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 790pF. Cost): 60pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: HIGH dv/dt, Low Gate Capacitance. G-S Protection: no. Id(imp): 52A. IDss (min): 1uA. Marking on the case: 13NM60N. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 3 ns. Technology: MDmesh™ II Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 8.2A, 13A, 10uA, 0.26 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 8.2A. ID (T=25°C): 13A. Idss (max): 10uA. On-resistance Rds On: 0.26 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 1000pF. Cost): 60pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: HIGH dv/dt, Low Gate Capacitance. G-S Protection: no. Id(imp): 52A. IDss (min): 1uA. Marking on the case: 18NM60. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 12 ns. Technology: MDmesh™ II Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 1.57A, 2.5A, 50uA, 3.8 Ohms, TO-220FP, TO-220FP, 800V. ID (T=100°C): 1.57A. ID (T=25°C): 2.5A. Idss (max): 50uA. On-resistance Rds On: 3.8 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 800V. C(in): 485pF. Cost): 57pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 384 ns. Type of transistor: MOSFET. Function: switching circuits. G-S Protection: yes. Id(imp): 10A. IDss (min): 1uA. Marking on the case: F3NK80Z. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 36ns. Td(on): 17 ns. Technology: Zener-protected SuperMESH™ Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V

N-channel transistor, PCB soldering, TO-220FP, 1 kV, 3.5A. Housing: PCB soldering. Housing: TO-220FP. Drain-source voltage Uds [V]: 1 kV. Drain Current Id [A] @ 25°C: 3.5A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: F5NK100Z. Drain current through resistor Rds [Ohm] @ Ids [A]: 3.7 Ohms @ 1.75A. Gate breakdown voltage Ugs [V]: 4.5V. Switch-on time ton [nsec.]: 23 ns. Switch-off delay tf[nsec.]: 52 ns. Ciss Gate Capacitance [pF]: 1154pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 5A, 8A, 50uA, 1.1 Ohms, TO-220FP, TO220FP, 900V. ID (T=100°C): 5A. ID (T=25°C): 8A. Idss (max): 50uA. On-resistance Rds On: 1.1 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO220FP. Voltage Vds(max): 900V. C(in): 2115pF. Cost): 190pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 950 ns. Type of transistor: MOSFET. Function: switching circuits. G-S Protection: yes. Id(imp): 32A. IDss (min): 1uA. Marking on the case: F9NK90Z. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 22 ns. Technology: Zener-protected SuperMESH™ Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V

N-channel transistor, 4A, 6.5A, 100mA, 0.63 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 4A. ID (T=25°C): 6.5A. Idss (max): 100mA. On-resistance Rds On: 0.63 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 452pF. Cost): 30pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 324 ns. Type of transistor: MOSFET. Function: Low input capacitance and gate charge. G-S Protection: no. Id(imp): 26A. IDss (min): 1mA. Marking on the case: 9NM60N. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. RoHS: yes. Spec info: ID pulse 26A. Assembly/installation: PCB through-hole mounting. Td(off): 52.5 ns. Td(on): 28 ns. Technology: MDmesh™ II Power MOSFET. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 7A, TO-220FP, TO-220FP, 600V. Ic(T=100°C): 7A. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Collector/emitter voltage Vceo: 600V. C(in): 610pF. Cost): 65pF. CE diode: yes. Channel type: N. Trr Diode (Min.): 50 ns. Function: light dimmer, Static relay, Motor driver. Germanium diode: no. Collector current: 20A. Ic(pulse): 100A. Marking on the case: GF10NB60SD. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. RoHS: yes. Spec info: Low on-voltage drop (VCE(sat)). Assembly/installation: PCB through-hole mounting. Td(off): 1.2 ns. Td(on): 0.7 ns. Technology: PowerMESH IGBT. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.35V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 2.5V

N-channel transistor, 10A, TO-220, TO-220, 600V. Ic(T=100°C): 10A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 600V. C(in): 380pF. Cost): 46pF. CE diode: yes. Channel type: N. Trr Diode (Min.): 35 ns. Function: High frequency motor controls. Germanium diode: no. Collector current: 20A. Ic(pulse): 30A. Marking on the case: GP10NC60KD. Number of terminals: 3. Pd (Power Dissipation, Max): 65W. RoHS: yes. Spec info: Short-circuit withstand time 10us. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 17 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.2V. Maximum saturation voltage VCE(sat): 2.5V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 6.5V

N-channel transistor, 30A, TO-247, TO-247AC, 600V. Ic(T=100°C): 30A. Housing: TO-247. Housing (according to data sheet): TO-247AC. Collector/emitter voltage Vceo: 600V. C(in): 2200pF. Cost): 225pF. CE diode: yes. Channel type: N. Trr Diode (Min.): 44 ns. Function: high frequency inverters, UPS. Germanium diode: no. Collector current: 60A. Ic(pulse): 150A. Marking on the case: GW20NC60VD. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: Very Fast PowerMESH™ IGBT. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 31 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.8V. Maximum saturation voltage VCE(sat): 2.5V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3.75V. Gate/emitter voltage VGE(th)max.: 5.75V

N-channel transistor, 30A, TO-247, TO-247AC, 1200V. Ic(T=100°C): 30A. Housing: TO-247. Housing (according to data sheet): TO-247AC. Collector/emitter voltage Vceo: 1200V. C(in): 2510pF. Cost): 175pF. CE diode: yes. Channel type: N. Trr Diode (Min.): 35 ns. Function: high current capability, High input impedance. Germanium diode: no. Production date: 201509. Collector current: 60A. Ic(pulse): 135A. Marking on the case: GW30NC120HD. Number of terminals: 3. Pd (Power Dissipation, Max): 220W. RoHS: yes. Spec info: Very Fast PowerMESH™ IGBT. Assembly/installation: PCB through-hole mounting. Td(off): 275 ns. Td(on): 29 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.2V. Maximum saturation voltage VCE(sat): 2.75V. Gate/emitter voltage VGE: 25V. Gate/emitter voltage VGE(th) min.: 3.75V. Gate/emitter voltage VGE(th)max.: 5.75V

N-channel transistor, 50A, TO-247, TO-247AC, 600V. Ic(T=100°C): 50A. Housing: TO-247. Housing (according to data sheet): TO-247AC. Collector/emitter voltage Vceo: 600V. C(in): 4550pF. Cost): 350pF. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Function: High frequency operation up to 50KHz. Germanium diode: no. Collector current: 80A. Ic(pulse): 200A. Marking on the case: GW40NC60V. Number of terminals: 3. Pd (Power Dissipation, Max): 260W. RoHS: yes. Spec info: Very Fast PowerMESH™ IGBT. Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 43 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.9V. Maximum saturation voltage VCE(sat): 2.5V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3.75V. Gate/emitter voltage VGE(th)max.: 5.75V

N-channel transistor, 3.2A, 5A, 250uA, 1.5 Ohms, ISOWATT218FX, ISOWATT218, 600V. ID (T=100°C): 3.2A. ID (T=25°C): 5A. Idss (max): 250uA. On-resistance Rds On: 1.5 Ohms. Housing: ISOWATT218FX. Housing (according to data sheet): ISOWATT218. Voltage Vds(max): 600V. C(in): 1350pF. Cost): 175pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 600 ns. Type of transistor: MOSFET. Function: fast power MOSFET transistor. G-S Protection: no. Id(imp): 32A. IDss (min): 25uA. Note: Viso 4000V. Marking on the case: H8NA60FI. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 60W. Assembly/installation: PCB through-hole mounting. Td(off): 16 ns. Td(on): 20 ns. Technology: 'Enhancement mode'. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 3.75V. Vgs(th) min.: 2.25V

N-channel transistor, 630mA, 1A, 50uA, 1.1 Ohms, SOT-223 ( TO-226 ), SOT-223, 200V. ID (T=100°C): 630mA. ID (T=25°C): 1A. Idss (max): 50uA. On-resistance Rds On: 1.1 Ohms. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Voltage Vds(max): 200V. C(in): 150pF. Cost): 30pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 4A. IDss (min): 1uA. Marking on the case: 4NF20L. Pd (Power Dissipation, Max): 3.3W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 10.4 ns. Td(on): 2 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V

N-channel transistor, 70A, 100A, 100uA, 0.008 Ohms, TO-220, TO-220, 80V. ID (T=100°C): 70A. ID (T=25°C): 100A. Idss (max): 100uA. On-resistance Rds On: 0.008 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 80V. C(in): 5955pF. Cost): 244pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 38 ns. Type of transistor: MOSFET. Function: switching circuits. G-S Protection: no. Id(imp): 400A. Marking on the case: 100N8F6. Number of terminals: 3. Pd (Power Dissipation, Max): 176W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 103 ns. Td(on): 33 ns. Technology: STripFET™ F6 technology. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V