N-channel FETs and MOSFETs

N-channel transistor, 12A, 15A, 10uA, 0.0075 Ohms, PowerPAK SO-8, PowerPAK SO8 ( 6.15x5.15x1.07mm ), 30 v. ID (T=100°C): 12A. ID (T=25°C): 15A. Idss (max): 10uA. On-resistance Rds On: 0.0075 Ohms. Housing: PowerPAK SO-8. Housing (according to data sheet): PowerPAK SO8 ( 6.15x5.15x1.07mm ). Voltage Vds(max): 30 v. C(in): 985pF. Cost): 205pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 14 ns. Type of transistor: MOSFET. Function: 'High-Side Switch'. G-S Protection: no. Id(imp): 50A. IDss (min): 1uA. Marking on the case: 196k Ohms. Number of terminals: 8. Pd (Power Dissipation, Max): 29.8W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 19 ns. Td(on): 14 ns. Technology: TrenchFET ® Power MOSFET, (D-S) MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V

N-channel transistor, 90A, Other, Other, 600V. Ic(T=100°C): 90A. Housing: Other. Housing (according to data sheet): Other. Collector/emitter voltage Vceo: 600V. C(in): 5000pF. Cost): 720pF. CE diode: yes. Channel type: N. Function: High Power IGBT. Germanium diode: no. Collector current: 100A. Ic(pulse): 150A. Note: Half Bridge IGBT MTP (Warp Speed 60-100KHz). Number of terminals: 7. RoHS: yes. Spec info: Ic 114A @ 25°C, 50A @ 109°C, Icm 360A (pulsed). Td(off): 450 ns. Td(on): 30 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 6.5V

N-channel transistor, 90A, Other, Other, 600V. Ic(T=100°C): 90A. Housing: Other. Housing (according to data sheet): Other. Collector/emitter voltage Vceo: 600V. C(in): 5000pF. Cost): 720pF. CE diode: yes. Channel type: N. Function: High Power IGBT. Germanium diode: no. Collector current: 100A. Ic(pulse): 150A. Note: Half Bridge IGBT MTP (Warp Speed 60-100KHz). Number of terminals: 7. RoHS: yes. Spec info: Ic 114A @ 25°C, 50A @ 109°C, Icm 360A (pulsed). Td(off): 450 ns. Td(on): 30 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 6.5V

N-channel transistor, 330A, Other, Other, 1200V. Ic(T=100°C): 330A. Housing: Other. Housing (according to data sheet): Other. Collector/emitter voltage Vceo: 1200V. C(in): 23.1pF. Cost): 1.9pF. CE diode: yes. Channel type: N. Function: High Power IGBT. Germanium diode: no. Collector current: 470A. Ic(pulse): 600A. Number of terminals: 7. Dimensions: 106.4x61.4x30.5mm. RoHS: yes. Spec info: IFSM--2200Ap (t=10ms). Assembly/installation: PCB through-hole mounting. Td(off): 650 ns. Td(on): 330 ns. Operating temperature: -40...+125°C. Saturation voltage VCE(sat): 1.7V. Maximum saturation voltage VCE(sat): 2.15V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5V. Gate/emitter voltage VGE(th)max.: 6.5V

N-channel transistor, 20A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 1100pF. Cost): 107pF. CE diode: yes. Channel type: N. Trr Diode (Min.): 300 ns. Function: Fast S-IGBT in NPT technology. Collector current: 40A. Ic(pulse): 80A. Number of terminals: 3. Pd (Power Dissipation, Max): 179W. RoHS: yes. Spec info: K20N60. Assembly/installation: PCB through-hole mounting. Td(off): 445 ns. Td(on): 36ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.4V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 5V

N-channel transistor, 20A, TO-247, TO-247 ( AC ), 1200V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 1200V. C(in): 1150pF. Cost): 120pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 280 ns. Function: Fast IGBT in NPT-technology with soft, fast recovery. Collector current: 46A. Ic(pulse): 84A. Marking on the case: K25N120. Number of terminals: 3. Pd (Power Dissipation, Max): 313W. RoHS: yes. Spec info: Td(on) 50ns / Td(off) 820ns. Assembly/installation: PCB through-hole mounting. Td(off): 730 ns. Td(on): 45 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 3.1V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 5V

N-channel transistor, 49A, 77.5A, 10uA, 0.041 Ohms, TO-247, TO-247, 650V. ID (T=100°C): 49A. ID (T=25°C): 77.5A. Idss (max): 10uA. On-resistance Rds On: 0.041 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 650V. C(in): 8180pF. Cost): 310pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 630 ns. Type of transistor: MOSFET. Function: 'Increased MOSFET dv/dt ruggedness'. G-S Protection: no. Id(imp): 267A. IDss (min): 5uA. Marking on the case: 6R041P6. Number of terminals: 3. Pd (Power Dissipation, Max): 481W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 29 ns. Technology: CoolMOS ™ P6 Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4.5V. Vgs(th) min.: 3.5V

N-channel transistor, SO, SO-8. Housing: SO. Housing (according to data sheet): SO-8. Channel type: N. Quantity per case: 2. Function: Rds-on 0.017...0.025 Ohms. Marking on the case: TB. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD)

N-channel transistor, 2.8A, 4.5A, 50uA, 0.95 Ohms, TO-220FP, TO-220FP-3-1, 650V. ID (T=100°C): 2.8A. ID (T=25°C): 4.5A. Idss (max): 50uA. On-resistance Rds On: 0.95 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP-3-1. Voltage Vds(max): 650V. C(in): 490pF. Cost): 160pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: Ultra Low Gate Charge High Peak Current Capability. G-S Protection: no. Id(imp): 13.5A. IDss (min): 0.5uA. Note: Fully isolated package (2500VAC /1 minute). Marking on the case: 04N60C3. Number of terminals: 3. Pd (Power Dissipation, Max): 31W. RoHS: yes. Spec info: Exceptional dv/dt capability. Assembly/installation: PCB through-hole mounting. Td(off): 58.5 ns. Td(on): 6 ns. Technology: Cool MOS™ Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V

N-channel transistor, 4.6A, 7.3A, 100uA, 0.54 Ohms, TO-220FP, TO-220FP, 650V. ID (T=100°C): 4.6A. ID (T=25°C): 7.3A. Idss (max): 100uA. On-resistance Rds On: 0.54 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 650V. C(in): 790pF. Cost): 260pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated High peak current capability'. G-S Protection: no. Id(imp): 21.9A. IDss (min): 0.5uA. Note: Fully isolated package (2500VAC /1 minute). Marking on the case: 07N60C3. Number of terminals: 3. Pd (Power Dissipation, Max): 32W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 6 ns. Technology: Cool MOS™ Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V

N-channel transistor, PCB soldering, ITO-220 (PG-TO220FP), 650V, 7.3A. Housing: PCB soldering. Housing: ITO-220 (PG-TO220FP). Drain-source voltage Uds [V]: 650V. Drain Current Id [A] @ 25°C: 7.3A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 07N60C3. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.6 Ohms @ 4.6A. Gate breakdown voltage Ugs [V]: 3.9V. Switch-on time ton [nsec.]: 6 ns. Switch-off delay tf[nsec.]: 60 ns. Ciss Gate Capacitance [pF]: 790pF. Maximum dissipation Ptot [W]: 32W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 5.1A, 8A, 100uA, 0.56 Ohms, TO-220FP, TO-220FP, 800V. ID (T=100°C): 5.1A. ID (T=25°C): 8A. Idss (max): 100uA. On-resistance Rds On: 0.56 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 800V. C(in): 1100pF. Cost): 46pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated High peak current capability'. G-S Protection: no. Id(imp): 24A. IDss (min): 20uA. Marking on the case: 08N60C3. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Spec info: Fully isolated package (2500VAC /1 minute). Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool Mos POWER trafnsistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V

N-channel transistor, 7A, 11A, 100uA, 0.34 Ohms, TO-220FP, TO-220FP, 650V. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 100uA. On-resistance Rds On: 0.34 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 650V. C(in): 1200pF. Cost): 390pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: insulated case (2500VAC, 1 min). G-S Protection: no. Id(imp): 33A. IDss (min): 0.1uA. Marking on the case: 11N65C3. Number of terminals: 3. Pd (Power Dissipation, Max): 33W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 44 ns. Td(on): 10 ns. Technology: Cool MOS™ Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V

N-channel transistor, 7.1A, 11A, 200uA, 0.39 Ohms, TO-220FP, TO-220FP-3-1, 800V. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 200uA. On-resistance Rds On: 0.39 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP-3-1. Voltage Vds(max): 800V. C(in): 1600pF. Cost): 800pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. G-S Protection: no. Id(imp): 33A. IDss (min): 0.5uA. Marking on the case: 11N80C3. Number of terminals: 3. Pd (Power Dissipation, Max): 41W. Spec info: Fully isolated package (2500VAC /1 minute). Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool MOS™ Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 10A, 16A, 100uA, 0.25 Ohms, TO-220FP, TO-220FP, 560V. ID (T=100°C): 10A. ID (T=25°C): 16A. Idss (max): 100uA. On-resistance Rds On: 0.25 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 560V. C(in): 1600pF. Cost): 800pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 420 ns. Type of transistor: MOSFET. Function: Exceptional dv/dt capability. G-S Protection: no. Id(imp): 48A. IDss (min): 0.1uA. Note: Fully isolated package (2500VAC /1 minute). Marking on the case: 16N50C3. Number of terminals: 3. Pd (Power Dissipation, Max): 34W. RoHS: yes. Spec info: capacités effectives ultra faibles. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 10 ns. Technology: Cool MOS™ Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V

N-channel transistor, 28A, 32A, 32A, 0.028 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v. ID (T=100°C): 28A. ID (T=25°C): 32A. Idss (max): 32A. On-resistance Rds On: 0.028 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 30 v. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: logic level gated MOSFET transistor. Pd (Power Dissipation, Max): 100W. Assembly/installation: surface-mounted component (SMD). Technology: SIPMOS Power Transistor

N-channel transistor, 56A, 56A, D2PAK ( TO-263 ), TO-263 ( D2PAK ), 30 v. ID (T=25°C): 56A. Idss (max): 56A. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263 ( D2PAK ). Voltage Vds(max): 30 v. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: logic level gated MOSFET transistor. Marking on the case: 56N03L. Pd (Power Dissipation, Max): 120W. Assembly/installation: surface-mounted component (SMD). Technology: SIPMOS Power Transistor

N-channel transistor, 80A, 1uA, 3.4M Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 40V. ID (T=25°C): 80A. Idss (max): 1uA. On-resistance Rds On: 3.4M Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 40V. C(in): 4480pF. Cost): 1580pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 195 ns. Type of transistor: MOSFET. Function: 'Enhancement mode'. G-S Protection: no. Id(imp): 320A. IDss (min): 0.01uA. Marking on the case: 2N04H4. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 46 ns. Td(on): 14 ns. Technology: power MOSFET transistor. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V

N-channel transistor, 4.6A, 7.6A, 100uA, 0.50 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 560V. ID (T=100°C): 4.6A. ID (T=25°C): 7.6A. Idss (max): 100uA. On-resistance Rds On: 0.50 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 560V. C(in): 750pF. Cost): 350pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 370 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. G-S Protection: no. Id(imp): 22.8A. IDss (min): 0.5uA. Marking on the case: 08N50C3. Number of terminals: 2. Pd (Power Dissipation, Max): 83W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 60 ns. Td(on): 6 ns. Technology: Cool Mos POWER transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V

N-channel transistor, 6.5A, 9.2A, 100uA, 0.093 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 55V. ID (T=100°C): 6.5A. ID (T=25°C): 9.2A. Idss (max): 100uA. On-resistance Rds On: 0.093 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 55V. C(in): 215pF. Cost): 75pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. Function: dv/dt rated Enhancement mode. Id(imp): 37A. IDss (min): 0.1uA. Marking on the case: SPD09N05. Number of terminals: 2. Pd (Power Dissipation, Max): 24W. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 15 ns. Technology: SIPMOS Power-Transistor. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V

N-channel transistor, 28A, 30A, 100uA, 100uA, 0.023 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 30 v. ID (T=100°C): 28A. ID (T=25°C): 30A. Idss: 100uA. Idss (max): 100uA. On-resistance Rds On: 0.023 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 30 v. C(in): 790pF. Cost): 390pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 32 ns. Type of transistor: MOSFET. Function: logic level gated MOSFET transistor. Id(imp): 112A. Marking on the case: 28N03L. Number of terminals: 2. Pd (Power Dissipation, Max): 75W. Assembly/installation: surface-mounted component (SMD). Td(off): 12 ns. Td(on): 13 ns. Technology: SIPMOS Power Transistor. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1.6V

N-channel transistor, 4.6A, 7.3A, 100uA, 0.54 Ohms, TO-262 ( I2-PAK ), TO-262, 650V. ID (T=100°C): 4.6A. ID (T=25°C): 7.3A. Idss (max): 100uA. On-resistance Rds On: 0.54 Ohms. Housing: TO-262 ( I2-PAK ). Housing (according to data sheet): TO-262. Voltage Vds(max): 650V. C(in): 16pF. Cost): 30pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated High peak current capability'. G-S Protection: no. Id(imp): 21.9A. IDss (min): 0.5uA. Marking on the case: 07N60C3. Number of terminals: 3. Pd (Power Dissipation, Max): 83W. Assembly/installation: surface-mounted component (SMD). Td(off): 60 ns. Td(on): 6 ns. Technology: Cool MOS™ Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V

N-channel transistor, 2.8A, 4.5A, 50uA, 85m Ohms, TO-220, TO-220-3-1, 650V. ID (T=100°C): 2.8A. ID (T=25°C): 4.5A. Idss (max): 50uA. On-resistance Rds On: 85m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220-3-1. Voltage Vds(max): 650V. C(in): 490pF. Cost): 160pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: Ultra Low Gate Charge High Peak Current Capability. G-S Protection: no. Id(imp): 13.5A. IDss (min): 0.5uA. Marking on the case: 04N60C3. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Spec info: Exceptional dv/dt capability. Assembly/installation: PCB through-hole mounting. Td(off): 58.5 ns. Td(on): 6 ns. Technology: Cool MOS™ Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V

N-channel transistor, 2.8A, 4.5A, 50uA, 0.78 Ohms, TO-220, TO-220-3-1, 800V. ID (T=100°C): 2.8A. ID (T=25°C): 4.5A. Idss (max): 50uA. On-resistance Rds On: 0.78 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220-3-1. Voltage Vds(max): 800V. C(in): 490pF. Cost): 160pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: Ultra low gate charge Extreme dv/dt rated. G-S Protection: no. Id(imp): 13.5A. IDss (min): 0.5uA. Marking on the case: 04N80C3. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 58.5 ns. Td(on): 6 ns. Technology: Cool MOS™ Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V

N-channel transistor, 3.8A, 6A, 50uA, 0.78 Ohms, TO-220, TO-220-3-1, 800V. ID (T=100°C): 3.8A. ID (T=25°C): 6A. Idss (max): 50uA. On-resistance Rds On: 0.78 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220-3-1. Voltage Vds(max): 800V. C(in): 785pF. Cost): 33pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 520 ns. Type of transistor: MOSFET. Function: Ultra low gate charge Extreme dv/dt rated. G-S Protection: no. Id(imp): 18A. IDss (min): 10uA. Marking on the case: 06N80C3. Number of terminals: 3. Pd (Power Dissipation, Max): 83W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool MOS™ Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V