N-channel FETs and MOSFETs

N-channel transistor, 45A, 45A, 0.016 Ohms, TO-220, TO-220, 25V. ID (T=25°C): 45A. Idss (max): 45A. On-resistance Rds On: 0.016 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 25V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Field effect power transistor. Logic level control. Id(imp): 180A. Pd (Power Dissipation, Max): 86W. Assembly/installation: PCB through-hole mounting. Technology: TrenchMOS transistor

N-channel transistor, 6.2A, 8.7A, 8.7A, 0.4 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 6.2A. ID (T=25°C): 8.7A. Idss (max): 8.7A. On-resistance Rds On: 0.4 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 88W. Assembly/installation: PCB through-hole mounting. Technology: V-MOS SOT78

N-channel transistor, PCB soldering (SMD), SOT-23, TO-236AB, 100V, 1.9A. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236AB. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 1.9A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: PMV213SN. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.25 Ohms @ 0.5A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 5.5 ns. Switch-off delay tf[nsec.]: 9.5 ns. Ciss Gate Capacitance [pF]: 330pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 47A, 68A, 100uA, 13.9m Ohms, D2PAK ( TO-263 ), D2PAK (SOT404), 100V. ID (T=100°C): 47A. ID (T=25°C): 68A. Idss (max): 100uA. On-resistance Rds On: 13.9m Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK (SOT404). Voltage Vds(max): 100V. C(in): 3195pF. Cost): 221pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 52 ns. Type of transistor: MOSFET. Function: standard switching. G-S Protection: no. Id(imp): 272A. IDss (min): 0.06uA. Number of terminals: 3. Pd (Power Dissipation, Max): 170W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 52.5 ns. Td(on): 20.7 ns. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3V

N-channel transistor, 60.8A, 75A, 500uA, 12m Ohms, TO-220, TO-220AB ( SOT78 ), 100V. ID (T=100°C): 60.8A. ID (T=25°C): 75A. Idss (max): 500uA. On-resistance Rds On: 12m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB ( SOT78 ). Voltage Vds(max): 100V. C(in): 4900pF. Cost): 390pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 240A. IDss (min): 0.05uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Spec info: IDM--240A (Tmb 25°C; pulsed). Assembly/installation: PCB through-hole mounting. Td(off): 95 ns. Td(on): 25 ns. Technology: 'enhancement mode field-effect transistor'. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V

N-channel transistor, 36A, 50A, 500uA, 30 milliOhms, TO-220, TO-220AB ( SOT78 ), 150V. ID (T=100°C): 36A. ID (T=25°C): 50A. Idss (max): 500uA. On-resistance Rds On: 30 milliOhms. Housing: TO-220. Housing (according to data sheet): TO-220AB ( SOT78 ). Voltage Vds(max): 150V. C(in): 4720pF. Cost): 456pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 118 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 200A. IDss (min): 0.05uA. Number of terminals: 3. Pd (Power Dissipation, Max): 250W. RoHS: yes. Spec info: IDM--200A (Tmb 25°C; pulsed). Assembly/installation: PCB through-hole mounting. Td(off): 79 ns. Td(on): 25 ns. Technology: 'enhancement mode field-effect transistor'. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V

N-channel transistor, 1.1A, 1.8A, 50uA, 2.7M Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 650V. ID (T=100°C): 1.1A. ID (T=25°C): 1.8A. Idss (max): 50uA. On-resistance Rds On: 2.7M Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 650V. C(in): 200pF. Cost): 90pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 200 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 5.4A. IDss (min): 0.5uA. Marking on the case: 02N60C3. Number of terminals: 2. Pd (Power Dissipation, Max): 25W. Assembly/installation: surface-mounted component (SMD). Td(off): 45 ns. Td(on): 8 ns. Technology: Cool Mos POWER transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V

N-channel transistor, 4.6A, 7.3A, 100uA, 0.54 Ohms, TO-220, TO-220, 650V. ID (T=100°C): 4.6A. ID (T=25°C): 7.3A. Idss (max): 100uA. On-resistance Rds On: 0.54 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 650V. C(in): 30pF. Cost): 55pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated High peak current capability'. G-S Protection: no. Id(imp): 21.9A. IDss (min): 0.5uA. Marking on the case: 07N65C3. Number of terminals: 3. Pd (Power Dissipation, Max): 83W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 6 ns. Technology: Cool MOS™ Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V

N-channel transistor, 80A, 100uA, 5M Ohms, TO-220, TO-220, 30 v. ID (T=25°C): 80A. Idss (max): 100uA. On-resistance Rds On: 5M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 30 v. C(in): 2930pF. Cost): 1150pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 380A. IDss (min): 0.1uA. Marking on the case: 2N03L04. Number of terminals: 3. Pd (Power Dissipation, Max): 188W. RoHS: yes. Spec info: Enhancement mode, Logic Level. Assembly/installation: PCB through-hole mounting. Td(off): 54 ns. Td(on): 13 ns. Technology: Cool Mos. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2V. Vgs(th) min.: 1.2V

N-channel transistor, PCB soldering, TO-251AA, 50V, 14A. Housing: PCB soldering. Housing: TO-251AA. Drain-source voltage Uds [V]: 50V. Drain Current Id [A] @ 25°C: 14A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: RFD14N05L. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ 14A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 42 ns. Ciss Gate Capacitance [pF]: 670pF. Maximum dissipation Ptot [W]: 48W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, PCB soldering (SMD), D-PAK, 50V, 14A. Housing: PCB soldering (SMD). Housing: D-PAK. Drain-source voltage Uds [V]: 50V. Drain Current Id [A] @ 25°C: 14A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F14N05. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ 14A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 42 ns. Ciss Gate Capacitance [pF]: 670pF. Maximum dissipation Ptot [W]: 48W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 12A, 1uA, 12A, 0.15 Ohms, D-PAK ( TO-252 ), TO-252 ( D-PAK ), 60V. ID (T=25°C): 12A. Idss: 1uA. Idss (max): 12A. On-resistance Rds On: 0.15 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( D-PAK ). Voltage Vds(max): 60V. C(in): 850pF. Cost): 170pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: logic level control, ESD protection. G-S Protection: diode. Marking on the case: F3055L. Pd (Power Dissipation, Max): 48W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 25 ns. Td(on): 10 ns. Technology: 'Enhancement-Mode Power MOSFET'

N-channel transistor, 10A, 12A, 50uA, 0.20 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 10A. ID (T=25°C): 12A. Idss (max): 50uA. On-resistance Rds On: 0.20 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 900pF. Cost): 325pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. G-S Protection: no. Id(imp): 30A. IDss (min): 1uA. Marking on the case: F12N10L. Number of terminals: 3. Pd (Power Dissipation, Max): 60W. RoHS: yes. Spec info: N-Channel Logic Level Power MOSFET. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 15 ns. Technology: MegaFET process, Power MOSFET. Operating temperature: -55...+155°C. Gate/source voltage Vgs: 10V. Vgs(th) max.: 2V. Vgs(th) min.: 1V

N-channel transistor, 12A, 12A, 0.15 Ohms, TO-220, TO-220AB, 60V. ID (T=25°C): 12A. Idss (max): 12A. On-resistance Rds On: 0.15 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 60V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: MegaFET. Pd (Power Dissipation, Max): 53W. Assembly/installation: PCB through-hole mounting. Technology: 'Enhancement-Mode Power MOSFET'

N-channel transistor, PCB soldering, TO-220AB, 60V, 11A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 11A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: RFP3055LE. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.107 Ohms @ 8A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 8 ns. Switch-off delay tf[nsec.]: 22 ns. Ciss Gate Capacitance [pF]: 350pF. Maximum dissipation Ptot [W]: 38W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, PCB soldering, TO-220AB, 60V, 50A, 50, 0.022 Ohms, TO-220, TO-220AB, 60V. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 50A. Housing (JEDEC standard): 50. On-resistance Rds On: 0.022 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 60V. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: RFP50N06. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.022 Ohms @ 50A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 37 ns. Ciss Gate Capacitance [pF]: 2020pF. Maximum dissipation Ptot [W]: 131W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Assembly/installation: PCB through-hole mounting. Td(off): 37 ns. Td(on): 12 ns. Technology: Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-220AB, 60V, 70A, 50, TO-220, TO-220, 60V. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 70A. Housing (JEDEC standard): 50. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: RFP70N06. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.014 Ohms @ 70A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 32 ns. Ciss Gate Capacitance [pF]: 2250pF. Maximum dissipation Ptot [W]: 150W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Spec info: Temperature Compensated PSPICE® Model. Assembly/installation: PCB through-hole mounting. Td(off): 32 ns. Td(on): 10 ns. Technology: MegaFET process, Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, TO-3PN ( 2-16C1B ), TO-3PSG, 330V. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PSG. Collector/emitter voltage Vceo: 330V. CE diode: yes. Channel type: N. Trr Diode (Min.): 23 ns. Germanium diode: no. Collector current: 35A. Ic(pulse): 250A. Number of terminals: 3. Pd (Power Dissipation, Max): 60W. RoHS: yes. Spec info: trr 0.1us. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 20 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.6V. Gate/emitter voltage VGE: 30 v. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V

N-channel transistor, TO-3PN ( 2-16C1B ), TO-3PSG, 330V. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PSG. Collector/emitter voltage Vceo: 330V. CE diode: yes. Channel type: N. Trr Diode (Min.): 23 ns. Collector current: 35A. Ic(pulse): 250A. Number of terminals: 3. Pd (Power Dissipation, Max): 60W. RoHS: yes. Spec info: trr 0.06us. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 20 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.5V. Gate/emitter voltage VGE: 30 v. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V

N-channel transistor, TO-3PN ( 2-16C1B ), TO-3PSG, 300V. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PSG. Collector/emitter voltage Vceo: 300V. C(in): 1200pF. Cost): 80pF. CE diode: yes. Channel type: N. Trr Diode (Min.): 23 ns. Compatibility: Samsung PS42C450B1WXXU. Function: High Speed ​​Power Switching. Germanium diode: no. Collector current: 35A. Ic(pulse): 250A. Number of terminals: 3. Pd (Power Dissipation, Max): 60W. RoHS: yes. Spec info: trr 0.06us. Assembly/installation: PCB through-hole mounting. Td(off): 0.06 ns. Td(on): 0.02 ns. Technology: Trench gate and thin wafer technology G6H-II ser. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.4V. Maximum saturation voltage VCE(sat): 1.9V. Gate/emitter voltage VGE: 30 v. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V

N-channel transistor, 20A, 20A, TO-3P ( TO-218 SOT-93 ), TO-3P, 500V. ID (T=25°C): 20A. Idss (max): 20A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 500V. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Type of transistor: MOSFET. Number of terminals: 3. Pd (Power Dissipation, Max): 178W. Assembly/installation: PCB through-hole mounting. Technology: Field Effect Power MOSFET

N-channel transistor, 40A, 40A, TO-3P ( TO-218 SOT-93 ), TO-3P, 500V. ID (T=25°C): 40A. Idss (max): 40A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 500V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Trr 450ns, td(on) 52ns, td(off) 180ns. Id(imp): 60.4k Ohms. Pd (Power Dissipation, Max): 200W. Assembly/installation: PCB through-hole mounting. Technology: N-channel MOSFET transistor

N-channel transistor, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 360V. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Collector/emitter voltage Vceo: 360V. C(in): 85pF. Cost): 40pF. CE diode: no. Channel type: N. Function: IGBT. Germanium diode: no. Collector current: 30A. Ic(pulse): 250A. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. RoHS: yes. Spec info: 150ns, 30W, 40A. Assembly/installation: surface-mounted component (SMD). Td(off): 90 ns. Td(on): 40 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.6V. Gate/emitter voltage VGE: 30 v. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V

N-channel transistor, 115mA, 115mA, 7.5 Ohms, SOT-23 ( TO-236 ), SOT-23, 60V. ID (T=25°C): 115mA. Idss (max): 115mA. On-resistance Rds On: 7.5 Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Voltage Vds(max): 60V. C(in): 25pF. Cost): 10pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. Function: Interface and switching. G-S Protection: yes. Id(imp): 0.8A. Marking on the case: RKM. Pd (Power Dissipation, Max): 0.2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 20 ns. Td(on): 12 ns. Technology: Silicon N-channel MOSFET. Operating temperature: -...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.5V. Vgs(th) min.: 1V

N-channel transistor, 2.5A, 2.5A, 0.074 Ohms, TSMT3, 30 v. ID (T=25°C): 2.5A. Idss (max): 2.5A. On-resistance Rds On: 0.074 Ohms. Housing (according to data sheet): TSMT3. Voltage Vds(max): 30 v. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: power switching, DC/DC converters. Id(imp): 10A. Note: screen printing/SMD code QY. Pd (Power Dissipation, Max): 1W. Assembly/installation: surface-mounted component (SMD). Technology: N-Ch MOS FET