N-channel FETs and MOSFETs

N-channel transistor, 8 Ohms, TO-92, TO-92, 25V. On-resistance Rds On: 8 Ohms. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 25V. C(in): 160pF. Cost): 35pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Type of transistor: JFET. G-S Protection: no. IDss (min): 100mA. IGF: 50mA. Number of terminals: 3. Pd (Power Dissipation, Max): 350mW. Assembly/installation: PCB through-hole mounting. Td(off): 5 ns. Td(on): 6 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 0.7V. Gate/source voltage (off) max.: 4.5V. Gate/source voltage (off) min.: 0.5V

N-channel transistor, 30 Ohms, 35V. On-resistance Rds On: 30 Ohms. Voltage Vds(max): 35V. Channel type: N. Quantity per case: 1. Type of transistor: FET. Function: Up 10V. IDss (min): 20mA. IGF: 50mA. Pd (Power Dissipation, Max): 0.35W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Gate/source voltage (off) max.: 10V. Gate/source voltage (off) min.: 3V

N-channel transistor, 5mA, TO-92, TO-92 Ammo-Pak, 35V. Idss (max): 5mA. Housing: TO-92. Housing (according to data sheet): TO-92 Ammo-Pak. Voltage Vds(max): 35V. C(in): 28pF. Cost): 5pF. Channel type: N. Quantity per case: 1. Type of transistor: FET. Function: Up 4.5V. IGF: 50mA. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Gate/source voltage (off) max.: 5V. Gate/source voltage (off) min.: 1V

N-channel transistor, 100 Ohms, TO-92, TO-92, 35V. On-resistance Rds On: 100 Ohms. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 35V. C(in): 28pF. Cost): 5pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Type of transistor: FET. G-S Protection: no. IDss (min): 0.2mA. IGF: 50mA. Number of terminals: 3. Pd (Power Dissipation, Max): 350mW. RoHS: yes. Spec info: VGS(off) min 0.5V, max 3V. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 35V. Gate/source voltage (off) max.: 3V. Gate/source voltage (off) min.: 0.5V

N-channel transistor, 60A, TO-247, TO-247, 650V. Ic(T=100°C): 60A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 650V. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Germanium diode: no. Collector current: 100A. Ic(pulse): 180A. Marking on the case: 60T65PES. Number of terminals: 3. Pd (Power Dissipation, Max): 535W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 142ns. Td(on): 45 ns. Technology: High Speed Fieldstop Trench IGBT, Second Generation. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.85V. Maximum saturation voltage VCE(sat): 2.4V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6V

N-channel transistor, 1.4A, 1.4A, 30 v. ID (T=25°C): 1.4A. Idss (max): 1.4A. Voltage Vds(max): 30 v. Channel type: N. Quantity per case: 1. Type of transistor: FET. Function: 0505-111646. Note: screen printing/SMD code QU. Assembly/installation: surface-mounted component (SMD). Technology: SMD 5p.

N-channel transistor, 6.9A, 11A, 1uA, 0.45 Ohms, TO-220FP, TO220F, 600V. ID (T=100°C): 6.9A. ID (T=25°C): 11A. Idss (max): 1uA. On-resistance Rds On: 0.45 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO220F. Voltage Vds(max): 600V. C(in): 1700pF. Cost): 184pF. Channel type: N. Drain-source protection : yes. Trr Diode (Min.): 430 ns. Type of transistor: MOSFET. Function: SMPS, high Speed switching. G-S Protection: no. Id(imp): 44A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 49W. RoHS: yes. Spec info: Ultra Low Gate Charge. Assembly/installation: PCB through-hole mounting. Td(off): 76 ns. Td(on): 38 ns. Technology: Cool Mos POWER transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 6.9A, 11A, 1uA, 0.45 Ohms, TO-220FP, TO220F, 650V. ID (T=100°C): 6.9A. ID (T=25°C): 11A. Idss (max): 1uA. On-resistance Rds On: 0.45 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO220F. Voltage Vds(max): 650V. C(in): 1650pF. Cost): 180pF. Channel type: N. Drain-source protection : yes. Trr Diode (Min.): 355 ns. Type of transistor: MOSFET. Function: SMPS, high Speed switching. G-S Protection: no. Id(imp): 48A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 49.6W. RoHS: yes. Spec info: Ultra Low Gate Charge. Assembly/installation: PCB through-hole mounting. Td(off): 132 ns. Td(on): 27 ns. Technology: Cool Mos POWER transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 5.5A, 9A, 9A, 0.72 Ohms, TO-220FP, TO-220F, 500V. ID (T=100°C): 5.5A. ID (T=25°C): 9A. Idss (max): 9A. On-resistance Rds On: 0.72 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 500V. C(in): 780pF. Cost): 100pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 272 ns. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 28nC, Low Crss 24pF. G-S Protection: no. Id(imp): 36A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 38W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 38 ns. Td(on): 18 ns. Technology: DMOS, QFET. Operating temperature: +55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 5.7A, 9A, 1uA, 0.65 Ohms, TO-220FP, TO220F, 600V. ID (T=100°C): 5.7A. ID (T=25°C): 9A. Idss (max): 1uA. On-resistance Rds On: 0.65 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO220F. Voltage Vds(max): 600V. C(in): 1160pF. Cost): 134pF. Channel type: N. Drain-source protection : yes. Trr Diode (Min.): 360ns. Type of transistor: MOSFET. Function: SMPS, high Speed switching. G-S Protection: no. Id(imp): 32A. IDss (min): 1uA. Marking on the case: MDF9N60. Number of terminals: 3. Pd (Power Dissipation, Max): 48W. RoHS: yes. Spec info: Ultra Low Gate Charge. Assembly/installation: PCB through-hole mounting. Td(off): 48 ns. Td(on): 31 ns. Technology: Cool Mos POWER transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 2A, 6uA, 0.3 Ohms, TO-220, TO-220AB, 62V. ID (T=25°C): 2A. Idss (max): 6uA. On-resistance Rds On: 0.3 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 62V. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: Car electronics. G-S Protection: yes. IDss (min): 0.6uA. Marking on the case: L2N06CL. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Spec info: MOSFET HYBRID. Assembly/installation: PCB through-hole mounting. Td(off): 5us. Td(on): 1us. Technology: SMARTDISCRETES MOSFET Logic Level. Operating temperature: -50...+150°C. Gate/source voltage Vgs: 10V. Vgs(th) min.: 1V

N-channel transistor, PCB soldering (SMD), SOT-23, 60V, 0.5A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 0.5A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: MMBF170. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.2 Ohms @ 0.2A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 10 ns. Ciss Gate Capacitance [pF]: 40pF. Maximum dissipation Ptot [W]: 0.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SOT-23, TO-236AB, 60V, 0.5A. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236AB. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 0.5A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 6Z. Drain current through resistor Rds [Ohm] @ Ids [A]: 5 Ohms @ 0.2A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 10 ns. Ciss Gate Capacitance [pF]: 60pF. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SOT-23, 30 v, 25mA. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: 30 v. Drain current Idss [A] @ Ug=0V: 25mA. RoHS: yes. Component family: N-Channel JFET Transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 6K. Gate-source breakpoint voltage Ugss [V] @ Uds=0V: -2V @ +15V. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 9mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 25V. Idss (max): 9mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 25V. C(in): 4.5pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Type of transistor: JFET. Function: Uni sym. G-S Protection: no. IDss (min): 2mA. IGF: 10mA. Note: screen printing/SMD code 61S. Marking on the case: 61 S. Number of terminals: 3. Pd (Power Dissipation, Max): 2mA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: general purpose JFET transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 3.5V. Gate/source voltage (off) max.: 7V. Gate/source voltage (off) min.: 1V

N-channel transistor, 1mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 40V. Idss (max): 1mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 40V. Channel type: N. Conditioning: roll. Conditioning unit: 3000. Drain-source protection : no. Quantity per case: 1. Type of transistor: JFET. G-S Protection: no. IDss (min): 0.2mA. IGF: 50mA. Note: screen printing/SMD code 62P. Marking on the case: 62 P. Number of terminals: 3. Pd (Power Dissipation, Max): 0.2mA. RoHS: yes. Spec info: VGS(off) 0.3V...1.5V. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Gate/source voltage Vgs: 40V

N-channel transistor, 30mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 25V. Idss (max): 30mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 25V. Channel type: N. Conditioning: roll. Conditioning unit: 3000. Drain-source protection : no. Quantity per case: 1. Type of transistor: FET. Function: VHF/UHF amplifier, oscillator and mixer. G-S Protection: no. IDss (min): 12mA. IGF: 10mA. Note: screen printing/SMD code 6U. Marking on the case: 6U. Number of terminals: 3. Pd (Power Dissipation, Max): 12mA. RoHS: yes. Spec info: Gate amplifier, 16dB at 100MHz and 12dB at 450MHz. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C

N-channel transistor, 60mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 25V. Idss (max): 60mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 25V. Channel type: N. Conditioning: roll. Conditioning unit: 3000. Drain-source protection : no. Quantity per case: 1. Type of transistor: FET. Function: VHF/UHF amplifier, oscillator and mixer. G-S Protection: no. IDss (min): 24mA. IGF: 10mA. Note: screen printing/SMD code 6T. Marking on the case: 6T. Number of terminals: 3. Pd (Power Dissipation, Max): 350mW. RoHS: yes. Spec info: Gate amplifier, 16dB at 100MHz and 12dB at 450MHz. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C

N-channel transistor, PCB soldering (SMD), SOT-23, 25V, 60mA. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: 25V. Drain current Idss [A] @ Ug=0V: 60mA. RoHS: yes. Component family: N-Channel JFET Transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 6T. Gate-source breakpoint voltage Ugss [V] @ Uds=0V: -2V @ +10V. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 6.95A, 11A, 1uA, 0.32 Ohms, TO-220FP, TO-220F, 600V. ID (T=100°C): 6.95A. ID (T=25°C): 11A. Idss (max): 1uA. On-resistance Rds On: 0.32 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. C(in): 890pF. Cost): 670pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 375 ns. Type of transistor: MOSFET. Function: PFC Power Supply Stages, Switching Applications, Motor Control, DC/DC Converters. G-S Protection: no. Id(imp): 33A. Marking on the case: 60R360P. Number of terminals: 3. Pd (Power Dissipation, Max): 31W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 80 ns. Td(on): 18 ns. Technology: N-channel POWER MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering (SMD), SOT-23, TO-236AB, 50V, 0.22A. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236AB. Drain-source voltage Uds [V]: 50V. Drain Current Id [A] @ 25°C: 0.22A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: JD. Drain current through resistor Rds [Ohm] @ Ids [A]: 6 Ohms @ 0.22A. Gate breakdown voltage Ugs [V]: 1.6V. Switch-on time ton [nsec.]: 8 ns. Switch-off delay tf[nsec.]: 16 ns. Ciss Gate Capacitance [pF]: 60pF. Maximum dissipation Ptot [W]: 0.36W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 8A, 12A, 100uA, 0.10 Ohms, TO-220, TO-220AB, 60V. ID (T=100°C): 8A. ID (T=25°C): 12A. Idss (max): 100uA. On-resistance Rds On: 0.10 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 60V. C(in): 410pF. Cost): 114pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 55.7 ns. Type of transistor: MOSFET. Function: High Speed ​​Switching. G-S Protection: no. Id(imp): 45A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 48W. RoHS: yes. Spec info: Logic level gated transistor. Assembly/installation: PCB through-hole mounting. Td(off): 14 ns. Td(on): 9 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 15V. Vgs(th) max.: 2V. Vgs(th) min.: 1V

N-channel transistor, PCB soldering, TO-247AE, 100V, 45A. Housing: PCB soldering. Housing: TO-247AE. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 45A. RoHS: no. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MTW45N10E. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.027 Ohms @ 22.5A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 50 ns. Switch-off delay tf[nsec.]: 170 ns. Ciss Gate Capacitance [pF]: 5000pF. Maximum dissipation Ptot [W]: 180W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering, TO-264, 100V, 100A. Housing: PCB soldering. Housing: TO-264. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 100A. RoHS: no. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MTY100N10E. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.011 Ohms @ 50A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 96 ns. Switch-off delay tf[nsec.]: 372 ns. Ciss Gate Capacitance [pF]: 10640pF. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 52A, 52A, 0.011 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v. ID (T=25°C): 52A. Idss (max): 52A. On-resistance Rds On: 0.011 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 30 v. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Logic Level Enhancement Mode. Id(imp): 156A. Pd (Power Dissipation, Max): 75W. Assembly/installation: surface-mounted component (SMD). Technology: Field Effect Power MOSFET