N-channel FETs and MOSFETs

N-channel transistor, 12A, 15A, 15A, 0.05 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 60V. ID (T=100°C): 12A. ID (T=25°C): 15A. Idss (max): 15A. On-resistance Rds On: 0.05 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 60V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Id(imp): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 37W. Assembly/installation: surface-mounted component (SMD). Td(off): 15 ns. Td(on): 7 ns. Technology: (D-S) 175°C MOSFET, Logic Level

N-channel transistor, PCB soldering, TO-220AB, 30 v, 75A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 75A. RoHS: no. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: SUP75N03-04. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.004 Ohms @ 75A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 190 ns. Ciss Gate Capacitance [pF]: 10742pF. Maximum dissipation Ptot [W]: 187W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 85A, 85A, 250uA, 0.003 Ohms, TO-220, TO-220AB, 30 v. ID (T=100°C): 85A. ID (T=25°C): 85A. Idss (max): 250uA. On-resistance Rds On: 0.003 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 30 v. C(in): 3535pF. Cost): 680pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 41 ns. Type of transistor: MOSFET. Function: Power Supply, DC/DC Converter. G-S Protection: no. Id(imp): 60.4k Ohms. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 78W. RoHS: yes. Spec info: (D-S) 150°C MOSFET. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 11 ns. Technology: TrenchFET® Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V

N-channel transistor, TO-220FP, TO-220F-3FS, 430V. Housing: TO-220FP. Housing (according to data sheet): TO-220F-3FS. Collector/emitter voltage Vceo: 430V. C(in): 5500pF. Cost): 100pF. CE diode: no. Channel type: N. Various: flash, stroboscope control. Function: Low-saturation voltage, Ultra high speed switching. Germanium diode: Suppressor. Collector current: 240A. Ic(pulse): 240A. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. RoHS: yes. Spec info: High speed hall time--tf=270nS(typ). Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 46 ns. Technology: Enhancement type. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 3.6V. Maximum saturation voltage VCE(sat): 5V. Gate/emitter voltage VGE: 33V. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V

N-channel transistor, 20A, 10uA, 0.22 Ohms, TO-3PN ( 2-16C1B ), TO-3P, 500V. ID (T=25°C): 20A. Idss (max): 10uA. On-resistance Rds On: 0.22 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 500V. C(in): 2600pF. Cost): 280pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 1700 ns. Type of transistor: MOSFET. Function: Switching Regulator Applications. G-S Protection: no. Id(imp): 80A. Marking on the case: K20J50D. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 280W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 100 ns. Technology: Field Effect POWER MOS Type (MOSVII). Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 6A, 10uA, 1 Ohm, TO-220FP, TO-220F, 600V. ID (T=25°C): 6A. Idss (max): 10uA. On-resistance Rds On: 1 Ohm. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. C(in): 800pF. Cost): 100pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 1200 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). G-S Protection: no. Id(imp): 24A. Marking on the case: K6A60D. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 40 ns. Technology: Field Effect (TT-MOSVI). Operating temperature: -...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 6A, 10uA, 0.95 Ohms, TO-220FP, TO-220F, 650V. ID (T=25°C): 6A. Idss (max): 10uA. On-resistance Rds On: 0.95 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 650V. C(in): 1050pF. Cost): 100pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 1300 ns. Type of transistor: MOSFET. Function: Switching Regulator. G-S Protection: no. Id(imp): 24A. IDss (min): 10uA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 45W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 75 ns. Td(on): 60 ns. Technology: Field Effect Transistor. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 7A, 10uA, 0.50 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 600V. ID (T=25°C): 7A. Idss (max): 10uA. On-resistance Rds On: 0.50 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 600V. C(in): 470pF. Cost): 13pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 230 ns. Type of transistor: MOSFET. Function: for switching mode voltage regulators. G-S Protection: no. Id(imp): 28A. Marking on the case: TK7P60W. Number of terminals: 2. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 55 ns. Td(on): 40 ns. Technology: MOSFET (DTMOSIV). Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 3.7V. Vgs(th) min.: 2.7V

N-channel transistor, 10uA, 0.7 Ohms, TO-220FP, 2-10U1B, 650V. Idss (max): 10uA. On-resistance Rds On: 0.7 Ohms. Housing: TO-220FP. Housing (according to data sheet): 2-10U1B. Voltage Vds(max): 650V. C(in): 1350pF. Cost): 135pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). G-S Protection: no. Id(imp): 30Ap. Marking on the case: K8A65D. Number of terminals: 3. Pd (Power Dissipation, Max): 45W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 75 ns. Td(on): 60 ns. Technology: Field Effect (TT-MOSVII). Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v

N-channel transistor, 0.3A, 0.3A, 2.3 Ohms, TO-92, TO-92, 240V. ID (T=25°C): 0.3A. Idss (max): 0.3A. On-resistance Rds On: 2.3 Ohms. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 240V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Logic-Level. Pd (Power Dissipation, Max): 0.8W. Assembly/installation: PCB through-hole mounting. Technology: 9.31k Ohms

N-channel transistor, PCB soldering (SMD), PDFN56, 40V, 161A. Housing: PCB soldering (SMD). Housing: PDFN56. Drain-source voltage Uds [V]: 40V. Drain Current Id [A] @ 25°C: 161A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0025 Ohm @ 24A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 8.4 ns. Switch-off delay tf[nsec.]: 58 ns. Ciss Gate Capacitance [pF]: 7150pF. Maximum dissipation Ptot [W]: 136W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, PCB soldering (SMD), PDFN56, 40V, 161A. Housing: PCB soldering (SMD). Housing: PDFN56. Drain-source voltage Uds [V]: 40V. Drain Current Id [A] @ 25°C: 161A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0025 Ohm @ 24A. Gate breakdown voltage Ugs [V]: 2.5V. Switch-on time ton [nsec.]: 4 ns. Switch-off delay tf[nsec.]: 75 ns. Ciss Gate Capacitance [pF]: 6435pF. Maximum dissipation Ptot [W]: 136W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, PCB soldering (SMD), PDFN56, 40V, 121A. Housing: PCB soldering (SMD). Housing: PDFN56. Drain-source voltage Uds [V]: 40V. Drain Current Id [A] @ 25°C: 121A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0033 Ohm @ 21A. Gate breakdown voltage Ugs [V]: 2.5V. Switch-on time ton [nsec.]: 3 ns. Switch-off delay tf[nsec.]: 47 ns. Ciss Gate Capacitance [pF]: 4456pF. Maximum dissipation Ptot [W]: 107W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, PCB soldering (SMD), PDFN56, 40V, 121A. Housing: PCB soldering (SMD). Housing: PDFN56. Drain-source voltage Uds [V]: 40V. Drain Current Id [A] @ 25°C: 121A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0033 Ohm @ 21A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 7 ns. Switch-off delay tf[nsec.]: 35 ns. Ciss Gate Capacitance [pF]: 5022pF. Maximum dissipation Ptot [W]: 107W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, PCB soldering (SMD), PDFN56, 60V, 104A. Housing: PCB soldering (SMD). Housing: PDFN56. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 104A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.005 Ohm @ 16A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 8 ns. Switch-off delay tf[nsec.]: 56 ns. Ciss Gate Capacitance [pF]: 6870pF. Maximum dissipation Ptot [W]: 136W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, PCB soldering (SMD), PDFN56, 60V, 107A. Housing: PCB soldering (SMD). Housing: PDFN56. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 107A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0048 Ohm @ 16A. Gate breakdown voltage Ugs [V]: 2.5V. Switch-on time ton [nsec.]: 4 ns. Switch-off delay tf[nsec.]: 78 ns. Ciss Gate Capacitance [pF]: 6253pF. Maximum dissipation Ptot [W]: 136W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, PCB soldering (SMD), SO8, 20V, -6A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 20V. Drain Current Id [A] @ 25°C: -6A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.021 Ohms @ 6A. Gate breakdown voltage Ugs [V]: 0.6V. Switch-on time ton [nsec.]: 8.1 ns. Switch-off delay tf[nsec.]: 21.8 ns. Ciss Gate Capacitance [pF]: 562pF. Maximum dissipation Ptot [W]: 1.6W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 0.47A, 0.47A, 3 Ohms, 60V. ID (T=25°C): 0.47A. Idss (max): 0.47A. On-resistance Rds On: 3 Ohms. Voltage Vds(max): 60V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 1W. Technology: V-MOS

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 70V, 10A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 70V. Drain Current Id [A] @ 25°C: 10A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: VNB10N07. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ 5A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 100 ns. Switch-off delay tf[nsec.]: 900ns. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +135°C

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 42V, 14A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 42V. Drain Current Id [A] @ 25°C: 14A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: VNB14N04. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.07 Ohms @ 7A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 120ns. Switch-off delay tf[nsec.]: 500 ns. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +135°C

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 70V, 35A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 70V. Drain Current Id [A] @ 25°C: 35A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: VNB35N07-E. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.028 Ohms @ 18A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 200 ns. Switch-off delay tf[nsec.]: 800 ns. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +135°C

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 42V, 49A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 42V. Drain Current Id [A] @ 25°C: 49A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: VNB49N04. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.04 Ohms @ 25A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 600 ns. Switch-off delay tf[nsec.]: 2400 ns. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +135°C

N-channel transistor, 1.7A, 75uA, 0.25 Ohms, SOT-223 ( TO-226 ), SOT-223, 45V. ID (T=25°C): 1.7A. Idss (max): 75uA. On-resistance Rds On: 0.25 Ohms. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Voltage Vds(max): 45V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. IDss (min): 30uA. Note: screen printing/SMD code 1NV04P. Pd (Power Dissipation, Max): 7W. Assembly/installation: surface-mounted component (SMD). Technology: OMNIFET II fully autoprotected Power MOSFET

N-channel transistor, PCB soldering, TO-220AB, 70V, 10A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 70V. Drain Current Id [A] @ 25°C: 10A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: VNP10N07-E. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ 5A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 100 ns. Switch-off delay tf[nsec.]: 900ns. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +135°C

N-channel transistor, 20A, 200uA, 0.05 Ohms, TO-220, TO-220AB, 70V. ID (T=25°C): 20A. Idss (max): 200uA. On-resistance Rds On: 0.05 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 70V. RoHS: yes. Channel type: N. Type of transistor: MOSFET. Function: Fully autoprotected power mosfet. IDss (min): 50uA. Pd (Power Dissipation, Max): 83W. Spec info: Voltage Clamp 70V, I limit 20A. Assembly/installation: PCB through-hole mounting. Technology: OMNIFET