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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 75A, 110A, 250uA, 4.9m Ohms, TO-220, TO-220AB, 55V - IRF3205Z

N-channel transistor, 75A, 110A, 250uA, 4.9m Ohms, TO-220, TO-220AB, 55V - IRF3205Z
[TITLE]
[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 3.48$ 3.76$
5 - 9 3.31$ 3.58$
10 - 24 3.20$ 3.46$
25 - 49 3.13$ 3.38$
50 - 99 3.06$ 3.31$
100 - 249 2.79$ 3.02$
250 - 299 2.69$ 2.91$
Quantity U.P
1 - 4 3.48$ 3.76$
5 - 9 3.31$ 3.58$
10 - 24 3.20$ 3.46$
25 - 49 3.13$ 3.38$
50 - 99 3.06$ 3.31$
100 - 249 2.79$ 3.02$
250 - 299 2.69$ 2.91$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 299
Set of 1

N-channel transistor, 75A, 110A, 250uA, 4.9m Ohms, TO-220, TO-220AB, 55V - IRF3205Z. N-channel transistor, 75A, 110A, 250uA, 4.9m Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 75A. ID (T=25°C): 110A. Idss (max): 250uA. On-resistance Rds On: 4.9m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 3450pF. Cost): 550pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 28 ns. Type of transistor: MOSFET. Function: 'Advanced Process Technology'. G-S Protection: no. Id(imp): 440A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: AUTOMOTIVE MOSFET. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer International Rectifier. Quantity in stock updated on 17/06/2025, 20:25.

Technical documentation

Equivalent products :

Quantity in stock : 72
STP80NF70

STP80NF70

N-channel transistor, 68A, 98A, 10uA, 0.0098 Ohms, TO-220, TO-220, 68V. ID (T=100°C): 68A. ID (T=25...
STP80NF70
N-channel transistor, 68A, 98A, 10uA, 0.0098 Ohms, TO-220, TO-220, 68V. ID (T=100°C): 68A. ID (T=25°C): 98A. Idss (max): 10uA. On-resistance Rds On: 0.0098 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 68V. C(in): 2550pF. Cost): 550pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 392A. IDss (min): 1uA. Marking on the case: 80NF70. Number of terminals: 3. Pd (Power Dissipation, Max): 190W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 17 ns. Technology: STripFET II POWER MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
STP80NF70
N-channel transistor, 68A, 98A, 10uA, 0.0098 Ohms, TO-220, TO-220, 68V. ID (T=100°C): 68A. ID (T=25°C): 98A. Idss (max): 10uA. On-resistance Rds On: 0.0098 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 68V. C(in): 2550pF. Cost): 550pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 392A. IDss (min): 1uA. Marking on the case: 80NF70. Number of terminals: 3. Pd (Power Dissipation, Max): 190W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 17 ns. Technology: STripFET II POWER MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
7.05$ VAT incl.
(6.52$ excl. VAT)
7.05$

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