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Semiconductors Transistors FET and MOSFET transistors

P-channel transistor, 10A, 10uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ), 60V - STD10P6F6

P-channel transistor, 10A, 10uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ), 60V - STD10P6F6
[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 1.58$ 1.71$
5 - 9 1.50$ 1.62$
10 - 24 1.42$ 1.54$
25 - 49 1.34$ 1.45$
50 - 99 1.31$ 1.42$
100 - 249 1.29$ 1.39$
250 - 536 1.23$ 1.33$
Quantity U.P
1 - 4 1.58$ 1.71$
5 - 9 1.50$ 1.62$
10 - 24 1.42$ 1.54$
25 - 49 1.34$ 1.45$
50 - 99 1.31$ 1.42$
100 - 249 1.29$ 1.39$
250 - 536 1.23$ 1.33$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 536
Set of 1

P-channel transistor, 10A, 10uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ), 60V - STD10P6F6. P-channel transistor, 10A, 10uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ), 60V. ID (T=25°C): 10A. Idss (max): 10uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ). Voltage Vds(max): 60V. C(in): 340pF. Cost): 40pF. Channel type: P. Trr Diode (Min.): 20 ns. Type of transistor: MOSFET. Function: switching circuits. Id(imp): 40A. ID (T=100°C): 7.2A. IDss (min): 1uA. Marking on the case: 10P6F6. Pd (Power Dissipation, Max): 35W. On-resistance Rds On: 0.13 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 64 ns. Td(on): 14 ns. Technology: Low gate charge STRipFET™ II Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 27/04/2025, 08:25.

Technical documentation

Equivalent products :

Quantity in stock : 194
NTD2955T4

NTD2955T4

P-channel transistor, 12A, 100uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. ID (...
NTD2955T4
P-channel transistor, 12A, 100uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. ID (T=25°C): 12A. Idss (max): 100uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. C(in): 500pF. Cost): 150pF. Channel type: P. Drain-source protection : Zener diode. Trr Diode (Min.): 50us. Type of transistor: MOSFET. Id(imp): 36A. IDss (min): 10uA. Marking on the case: NT2955. Pd (Power Dissipation, Max): 55W. On-resistance Rds On: 0.155 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 26 ns. Td(on): 10 ns. Technology: Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Number of terminals: 2. Function: ID pulse 36A/10ms. Quantity per case: 1. G-S Protection: no
NTD2955T4
P-channel transistor, 12A, 100uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. ID (T=25°C): 12A. Idss (max): 100uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. C(in): 500pF. Cost): 150pF. Channel type: P. Drain-source protection : Zener diode. Trr Diode (Min.): 50us. Type of transistor: MOSFET. Id(imp): 36A. IDss (min): 10uA. Marking on the case: NT2955. Pd (Power Dissipation, Max): 55W. On-resistance Rds On: 0.155 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 26 ns. Td(on): 10 ns. Technology: Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Number of terminals: 2. Function: ID pulse 36A/10ms. Quantity per case: 1. G-S Protection: no
Set of 1
1.68$ VAT incl.
(1.55$ excl. VAT)
1.68$
Quantity in stock : 117
FDD5614P

FDD5614P

P-channel transistor, 15A, 1uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. ID (T=...
FDD5614P
P-channel transistor, 15A, 1uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. ID (T=25°C): 15A. Idss (max): 1uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. RoHS: yes. C(in): 759pF. Cost): 90pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): surface-mounted component (SMD). Type of transistor: MOSFET. Function: DC/DC voltage converter. Id(imp): 45A. ID (T=100°C): 15A. IDss (min): 1uA. Note: Logic level gated transistor. Marking on the case: FDD5614P. Number of terminals: 2. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 0.076 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 19 ns. Td(on): 7 ns. Technology: PowerTrench MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. G-S Protection: no
FDD5614P
P-channel transistor, 15A, 1uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. ID (T=25°C): 15A. Idss (max): 1uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. RoHS: yes. C(in): 759pF. Cost): 90pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): surface-mounted component (SMD). Type of transistor: MOSFET. Function: DC/DC voltage converter. Id(imp): 45A. ID (T=100°C): 15A. IDss (min): 1uA. Note: Logic level gated transistor. Marking on the case: FDD5614P. Number of terminals: 2. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 0.076 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 19 ns. Td(on): 7 ns. Technology: PowerTrench MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. G-S Protection: no
Set of 1
3.36$ VAT incl.
(3.11$ excl. VAT)
3.36$

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RSF2WS-0R12

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