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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 49A, 77.5A, 10uA, 0.041 Ohms, TO-247, TO-247, 650V - SP0010-91630

N-channel transistor, 49A, 77.5A, 10uA, 0.041 Ohms, TO-247, TO-247, 650V - SP0010-91630
Quantity excl. VAT VAT incl.
1 - 1 45.62$ 49.32$
2 - 2 43.34$ 46.85$
3 - 4 42.43$ 45.87$
5 - 9 41.51$ 44.87$
10 - 14 41.06$ 44.39$
15 - 19 40.15$ 43.40$
20 - 30 38.78$ 41.92$
Quantity U.P
1 - 1 45.62$ 49.32$
2 - 2 43.34$ 46.85$
3 - 4 42.43$ 45.87$
5 - 9 41.51$ 44.87$
10 - 14 41.06$ 44.39$
15 - 19 40.15$ 43.40$
20 - 30 38.78$ 41.92$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 30
Set of 1

N-channel transistor, 49A, 77.5A, 10uA, 0.041 Ohms, TO-247, TO-247, 650V - SP0010-91630. N-channel transistor, 49A, 77.5A, 10uA, 0.041 Ohms, TO-247, TO-247, 650V. ID (T=100°C): 49A. ID (T=25°C): 77.5A. Idss (max): 10uA. On-resistance Rds On: 0.041 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 650V. C(in): 8180pF. Cost): 310pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 630 ns. Type of transistor: MOSFET. Function: 'Increased MOSFET dv/dt ruggedness'. G-S Protection: no. Id(imp): 267A. IDss (min): 5uA. Marking on the case: 6R041P6. Number of terminals: 3. Pd (Power Dissipation, Max): 481W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 29 ns. Technology: CoolMOS ™ P6 Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4.5V. Vgs(th) min.: 3.5V. Original product from manufacturer Infineon Technologies. Quantity in stock updated on 16/06/2025, 23:25.

Equivalent products :

Quantity in stock : 39
SPP17N80C3

SPP17N80C3

N-channel transistor, 11A, 17A, 250uA, 0.25 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 11A. ID (T=25...
SPP17N80C3
N-channel transistor, 11A, 17A, 250uA, 0.25 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.25 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. C(in): 2320pF. Cost): 1250pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. G-S Protection: no. Id(imp): 51A. IDss (min): 0.5uA. Marking on the case: 17N80C3. Number of terminals: 3. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 77 ns. Td(on): 45 ns. Technology: Cool Mos. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3V
SPP17N80C3
N-channel transistor, 11A, 17A, 250uA, 0.25 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.25 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. C(in): 2320pF. Cost): 1250pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. G-S Protection: no. Id(imp): 51A. IDss (min): 0.5uA. Marking on the case: 17N80C3. Number of terminals: 3. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 77 ns. Td(on): 45 ns. Technology: Cool Mos. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3V
Set of 1
13.57$ VAT incl.
(12.55$ excl. VAT)
13.57$

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