Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 18.99$ | 20.53$ |
2 - 2 | 18.04$ | 19.50$ |
3 - 4 | 17.66$ | 19.09$ |
5 - 9 | 17.09$ | 18.47$ |
10 - 14 | 16.71$ | 18.06$ |
15 - 19 | 16.14$ | 17.45$ |
20 - 35 | 15.57$ | 16.83$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 18.99$ | 20.53$ |
2 - 2 | 18.04$ | 19.50$ |
3 - 4 | 17.66$ | 19.09$ |
5 - 9 | 17.09$ | 18.47$ |
10 - 14 | 16.71$ | 18.06$ |
15 - 19 | 16.14$ | 17.45$ |
20 - 35 | 15.57$ | 16.83$ |
N-channel transistor, 0.29 Ohms, TO-247, 11A, 17A, 250uA, TO-247, 800V - SPW17N80C3. N-channel transistor, 0.29 Ohms, TO-247, 11A, 17A, 250uA, TO-247, 800V. On-resistance Rds On: 0.29 Ohms. Housing: TO-247. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. Housing (according to data sheet): TO-247. Voltage Vds(max): 800V. Channel type: N. C(in): 2320pF. Cost): 1250pF. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. G-S Protection: yes. Id(imp): 51A. IDss (min): 0.5uA. Marking on the case: 17N80C3. Number of terminals: 3. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 77 ns. Td(on): 45 ns. Technology: Cool Mos POWER transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer Infineon Technologies. Quantity in stock updated on 12/08/2025, 14:08.
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