Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 7.80$ | 8.43$ |
2 - 2 | 7.41$ | 8.01$ |
3 - 4 | 7.18$ | 7.76$ |
5 - 9 | 7.02$ | 7.59$ |
10 - 19 | 6.86$ | 7.42$ |
20 - 29 | 6.63$ | 7.17$ |
30 - 102 | 6.40$ | 6.92$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 7.80$ | 8.43$ |
2 - 2 | 7.41$ | 8.01$ |
3 - 4 | 7.18$ | 7.76$ |
5 - 9 | 7.02$ | 7.59$ |
10 - 19 | 6.86$ | 7.42$ |
20 - 29 | 6.63$ | 7.17$ |
30 - 102 | 6.40$ | 6.92$ |
N-channel transistor, 7A, 11A, 100uA, 0.34 Ohms, TO-220FP, TO-220FP, 650V - SPA11N65C3. N-channel transistor, 7A, 11A, 100uA, 0.34 Ohms, TO-220FP, TO-220FP, 650V. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 100uA. On-resistance Rds On: 0.34 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 650V. C(in): 1200pF. Cost): 390pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: insulated case (2500VAC, 1 min). G-S Protection: no. Id(imp): 33A. IDss (min): 0.1uA. Marking on the case: 11N65C3. Number of terminals: 3. Pd (Power Dissipation, Max): 33W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 44 ns. Td(on): 10 ns. Technology: Cool MOS™ Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Original product from manufacturer Infineon Technologies. Quantity in stock updated on 16/06/2025, 23:25.
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