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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 7.1A, 11A, 200uA, 0.39 Ohms, TO-220FP, TO-220FP-3-1, 800V - SPA11N80C3

N-channel transistor, 7.1A, 11A, 200uA, 0.39 Ohms, TO-220FP, TO-220FP-3-1, 800V - SPA11N80C3
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Quantity excl. VAT VAT incl.
1 - 4 6.23$ 6.73$
5 - 9 5.92$ 6.40$
10 - 24 5.61$ 6.06$
25 - 49 5.30$ 5.73$
50 - 99 5.17$ 5.59$
100 - 322 4.58$ 4.95$
Quantity U.P
1 - 4 6.23$ 6.73$
5 - 9 5.92$ 6.40$
10 - 24 5.61$ 6.06$
25 - 49 5.30$ 5.73$
50 - 99 5.17$ 5.59$
100 - 322 4.58$ 4.95$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 322
Set of 1

N-channel transistor, 7.1A, 11A, 200uA, 0.39 Ohms, TO-220FP, TO-220FP-3-1, 800V - SPA11N80C3. N-channel transistor, 7.1A, 11A, 200uA, 0.39 Ohms, TO-220FP, TO-220FP-3-1, 800V. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 200uA. On-resistance Rds On: 0.39 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP-3-1. Voltage Vds(max): 800V. C(in): 1600pF. Cost): 800pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. Id(imp): 33A. IDss (min): 0.5uA. Marking on the case: 11N80C3. Pd (Power Dissipation, Max): 41W. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool MOS™ Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Spec info: Fully isolated package (2500VAC /1 minute). Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 28/04/2025, 11:25.

Technical documentation

Equivalent products :

Quantity in stock : 32
SPP11N80C3

SPP11N80C3

N-channel transistor, 7.1A, 11A, 11A, 0.39 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 7.1A. ID (T=25...
SPP11N80C3
N-channel transistor, 7.1A, 11A, 11A, 0.39 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 11A. On-resistance Rds On: 0.39 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. Channel type: N. Type of transistor: MOSFET. Id(imp): 33A. Pd (Power Dissipation, Max): 156W. Assembly/installation: PCB through-hole mounting. Technology: Cool Mos. Function: ID pulse 33A. Quantity per case: 1
SPP11N80C3
N-channel transistor, 7.1A, 11A, 11A, 0.39 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 11A. On-resistance Rds On: 0.39 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. Channel type: N. Type of transistor: MOSFET. Id(imp): 33A. Pd (Power Dissipation, Max): 156W. Assembly/installation: PCB through-hole mounting. Technology: Cool Mos. Function: ID pulse 33A. Quantity per case: 1
Set of 1
8.29$ VAT incl.
(7.67$ excl. VAT)
8.29$
Quantity in stock : 7
SPW11N80C3

SPW11N80C3

N-channel transistor, 7.1A, 11A, 200uA, 0.39 Ohms, TO-247, TO-247, 800V. ID (T=100°C): 7.1A. ID (T=...
SPW11N80C3
N-channel transistor, 7.1A, 11A, 200uA, 0.39 Ohms, TO-247, TO-247, 800V. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 200uA. On-resistance Rds On: 0.39 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 800V. C(in): 1600pF. Cost): 800pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. Id(imp): 33A. IDss (min): 0.5uA. Marking on the case: 11N80C3. Pd (Power Dissipation, Max): 156W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool Mos. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
SPW11N80C3
N-channel transistor, 7.1A, 11A, 200uA, 0.39 Ohms, TO-247, TO-247, 800V. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 200uA. On-resistance Rds On: 0.39 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 800V. C(in): 1600pF. Cost): 800pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. Id(imp): 33A. IDss (min): 0.5uA. Marking on the case: 11N80C3. Pd (Power Dissipation, Max): 156W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool Mos. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
Set of 1
9.85$ VAT incl.
(9.11$ excl. VAT)
9.85$

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