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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 7.1A, 11A, 200uA, 0.39 Ohms, TO-247, TO-247, 800V - SPW11N80C3

N-channel transistor, 7.1A, 11A, 200uA, 0.39 Ohms, TO-247, TO-247, 800V - SPW11N80C3
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Quantity excl. VAT VAT incl.
1 - 1 9.11$ 9.85$
2 - 2 8.65$ 9.35$
3 - 4 8.38$ 9.06$
5 - 7 8.19$ 8.85$
Quantity U.P
1 - 1 9.11$ 9.85$
2 - 2 8.65$ 9.35$
3 - 4 8.38$ 9.06$
5 - 7 8.19$ 8.85$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 7
Set of 1

N-channel transistor, 7.1A, 11A, 200uA, 0.39 Ohms, TO-247, TO-247, 800V - SPW11N80C3. N-channel transistor, 7.1A, 11A, 200uA, 0.39 Ohms, TO-247, TO-247, 800V. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 200uA. On-resistance Rds On: 0.39 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 800V. C(in): 1600pF. Cost): 800pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. G-S Protection: no. Id(imp): 33A. IDss (min): 0.5uA. Marking on the case: 11N80C3. Number of terminals: 3. Pd (Power Dissipation, Max): 156W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool Mos. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Original product from manufacturer Infineon Technologies. Quantity in stock updated on 26/07/2025, 12:25.

Technical documentation

Equivalent products :

Quantity in stock : 29
SPP11N80C3

SPP11N80C3

N-channel transistor, 7.1A, 11A, 11A, 0.39 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 7.1A. ID (T=25...
SPP11N80C3
N-channel transistor, 7.1A, 11A, 11A, 0.39 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 11A. On-resistance Rds On: 0.39 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: ID pulse 33A. Id(imp): 33A. Pd (Power Dissipation, Max): 156W. Assembly/installation: PCB through-hole mounting. Technology: Cool Mos
SPP11N80C3
N-channel transistor, 7.1A, 11A, 11A, 0.39 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 11A. On-resistance Rds On: 0.39 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: ID pulse 33A. Id(imp): 33A. Pd (Power Dissipation, Max): 156W. Assembly/installation: PCB through-hole mounting. Technology: Cool Mos
Set of 1
8.29$ VAT incl.
(7.67$ excl. VAT)
8.29$
Quantity in stock : 316
SPA11N80C3

SPA11N80C3

N-channel transistor, 7.1A, 11A, 200uA, 0.39 Ohms, TO-220FP, TO-220FP-3-1, 800V. ID (T=100°C): 7.1A...
SPA11N80C3
N-channel transistor, 7.1A, 11A, 200uA, 0.39 Ohms, TO-220FP, TO-220FP-3-1, 800V. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 200uA. On-resistance Rds On: 0.39 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP-3-1. Voltage Vds(max): 800V. C(in): 1600pF. Cost): 800pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. G-S Protection: no. Id(imp): 33A. IDss (min): 0.5uA. Marking on the case: 11N80C3. Number of terminals: 3. Pd (Power Dissipation, Max): 41W. Spec info: Fully isolated package (2500VAC /1 minute). Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool MOS™ Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
SPA11N80C3
N-channel transistor, 7.1A, 11A, 200uA, 0.39 Ohms, TO-220FP, TO-220FP-3-1, 800V. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 200uA. On-resistance Rds On: 0.39 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP-3-1. Voltage Vds(max): 800V. C(in): 1600pF. Cost): 800pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. G-S Protection: no. Id(imp): 33A. IDss (min): 0.5uA. Marking on the case: 11N80C3. Number of terminals: 3. Pd (Power Dissipation, Max): 41W. Spec info: Fully isolated package (2500VAC /1 minute). Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool MOS™ Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
6.73$ VAT incl.
(6.23$ excl. VAT)
6.73$

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N-channel transistor, 7.1A, 11A, 200uA, 0.39 Ohms, TO-247, TO-247, 800V. ID (T=100°C): 7.1A. ID (T=...
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[LONGDESCRIPTION]
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N-channel transistor, 7.1A, 11A, 11A, 0.39 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 7.1A. ID (T=25...
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