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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 7A, 11A, 100uA, 0.34 Ohms, TO-220, TO-220, 650V - SPP11N60C3

N-channel transistor, 7A, 11A, 100uA, 0.34 Ohms, TO-220, TO-220, 650V - SPP11N60C3
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 5.71$ 6.17$
5 - 9 5.42$ 5.86$
10 - 24 5.25$ 5.68$
25 - 49 5.14$ 5.56$
50 - 99 5.02$ 5.43$
100 - 249 4.85$ 5.24$
250+ 4.68$ 5.06$
Quantity U.P
1 - 4 5.71$ 6.17$
5 - 9 5.42$ 5.86$
10 - 24 5.25$ 5.68$
25 - 49 5.14$ 5.56$
50 - 99 5.02$ 5.43$
100 - 249 4.85$ 5.24$
250+ 4.68$ 5.06$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

N-channel transistor, 7A, 11A, 100uA, 0.34 Ohms, TO-220, TO-220, 650V - SPP11N60C3. N-channel transistor, 7A, 11A, 100uA, 0.34 Ohms, TO-220, TO-220, 650V. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 100uA. On-resistance Rds On: 0.34 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 650V. C(in): 1200pF. Cost): 390pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated High peak current capability'. G-S Protection: no. Id(imp): 33A. IDss (min): 0.1uA. Marking on the case: 11N60C3. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 44 ns. Td(on): 10 ns. Technology: Cool Mos POWER trafnsistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Original product from manufacturer Infineon Technologies. Quantity in stock updated on 16/06/2025, 21:25.

Technical documentation

Equivalent products :

Quantity in stock : 11
FCP11N60

FCP11N60

N-channel transistor, 7A, 11A, 10uA, 0.32 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 7A. ID (T=25°C...
FCP11N60
N-channel transistor, 7A, 11A, 10uA, 0.32 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 10uA. On-resistance Rds On: 0.32 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. C(in): 1148pF. Cost): 671pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 390 ns. Type of transistor: MOSFET. Function: ID pulse 33A. G-S Protection: no. Id(imp): 33A. IDss (min): 1uA. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 119 ns. Td(on): 34 ns. Technology: SuperFET MOSFET. Operating temperature: -55...+150°C. Vgs(th) max.: 5V. Vgs(th) min.: 3V
FCP11N60
N-channel transistor, 7A, 11A, 10uA, 0.32 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 10uA. On-resistance Rds On: 0.32 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. C(in): 1148pF. Cost): 671pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 390 ns. Type of transistor: MOSFET. Function: ID pulse 33A. G-S Protection: no. Id(imp): 33A. IDss (min): 1uA. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 119 ns. Td(on): 34 ns. Technology: SuperFET MOSFET. Operating temperature: -55...+150°C. Vgs(th) max.: 5V. Vgs(th) min.: 3V
Set of 1
5.91$ VAT incl.
(5.47$ excl. VAT)
5.91$

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IRF9530N

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