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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 250V - NJW3281

NPN transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 250V - NJW3281
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Quantity excl. VAT VAT incl.
1 - 1 10.94$ 11.83$
2 - 2 10.39$ 11.23$
3 - 4 9.85$ 10.65$
5 - 9 9.30$ 10.05$
10 - 19 9.08$ 9.82$
20 - 29 8.86$ 9.58$
30 - 30 8.53$ 9.22$
Quantity U.P
1 - 1 10.94$ 11.83$
2 - 2 10.39$ 11.23$
3 - 4 9.85$ 10.65$
5 - 9 9.30$ 10.05$
10 - 19 9.08$ 9.82$
20 - 29 8.86$ 9.58$
30 - 30 8.53$ 9.22$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 30
Set of 1

NPN transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 250V - NJW3281. NPN transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 250V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 250V. C(in): 9pF. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: audio power amplifier. Production date: 201452 201512. Max hFE gain: 150. Minimum hFE gain: 45. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V. Spec info: complementary transistor (pair) NJW1302. BE diode: no. CE diode: no. Quantity in stock updated on 27/04/2025, 08:25.

Technical documentation

Equivalent products :

Quantity in stock : 13
MJL3281A

MJL3281A

NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264, 260V. Collector current: 15A. Housing: TO-264 ( TOP-...
MJL3281A
NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264, 260V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 260V. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Max hFE gain: 150. Minimum hFE gain: 45. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 260V. Saturation voltage VCE(sat): 3V. Vebo: 5V. Spec info: complementary transistor (pair) MJL1302A. BE diode: no. CE diode: no
MJL3281A
NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264, 260V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 260V. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Max hFE gain: 150. Minimum hFE gain: 45. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 260V. Saturation voltage VCE(sat): 3V. Vebo: 5V. Spec info: complementary transistor (pair) MJL1302A. BE diode: no. CE diode: no
Set of 1
17.70$ VAT incl.
(16.37$ excl. VAT)
17.70$
Quantity in stock : 48
MJW3281AG

MJW3281AG

NPN transistor, 15A, TO-247, TO-247, 230V. Collector current: 15A. Housing: TO-247. Housing (accordi...
MJW3281AG
NPN transistor, 15A, TO-247, TO-247, 230V. Collector current: 15A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 230V. Cost): 2.8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Production date: 201444 201513. Max hFE gain: 200. Minimum hFE gain: 50. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V. Technology: Power Bipolar Transistor. Spec info: complementary transistor (pair) MJW1302A. BE diode: no. CE diode: no
MJW3281AG
NPN transistor, 15A, TO-247, TO-247, 230V. Collector current: 15A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 230V. Cost): 2.8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Production date: 201444 201513. Max hFE gain: 200. Minimum hFE gain: 50. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V. Technology: Power Bipolar Transistor. Spec info: complementary transistor (pair) MJW1302A. BE diode: no. CE diode: no
Set of 1
7.79$ VAT incl.
(7.21$ excl. VAT)
7.79$

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