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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 20A, 28A, 250uA, 0.077 Ohms, TO-220, TO-220AB, 100V - IRF540

N-channel transistor, 20A, 28A, 250uA, 0.077 Ohms, TO-220, TO-220AB, 100V - IRF540
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 2.36$ 2.55$
5 - 9 2.24$ 2.42$
10 - 24 2.12$ 2.29$
25 - 49 2.00$ 2.16$
50 - 99 1.96$ 2.12$
100 - 110 1.91$ 2.06$
Quantity U.P
1 - 4 2.36$ 2.55$
5 - 9 2.24$ 2.42$
10 - 24 2.12$ 2.29$
25 - 49 2.00$ 2.16$
50 - 99 1.96$ 2.12$
100 - 110 1.91$ 2.06$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 110
Set of 1

N-channel transistor, 20A, 28A, 250uA, 0.077 Ohms, TO-220, TO-220AB, 100V - IRF540. N-channel transistor, 20A, 28A, 250uA, 0.077 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 20A. ID (T=25°C): 28A. Idss (max): 250uA. On-resistance Rds On: 0.077 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 1700pF. Cost): 560pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 180 ns. Type of transistor: MOSFET. Function: 1.3k Ohms. Id(imp): 110A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 53 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 27/04/2025, 08:25.

Technical documentation

Equivalent products :

Quantity in stock : 301
IRF540N

IRF540N

N-channel transistor, 23A, 33A, 250uA, 0.044 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 23A. ID (T...
IRF540N
N-channel transistor, 23A, 33A, 250uA, 0.044 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 23A. ID (T=25°C): 33A. Idss (max): 250uA. On-resistance Rds On: 0.044 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 1960pF. Cost): 250pF. Channel type: N. Trr Diode (Min.): 115 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 110A. IDss (min): 25uA. Pd (Power Dissipation, Max): 130W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
IRF540N
N-channel transistor, 23A, 33A, 250uA, 0.044 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 23A. ID (T=25°C): 33A. Idss (max): 250uA. On-resistance Rds On: 0.044 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 1960pF. Cost): 250pF. Channel type: N. Trr Diode (Min.): 115 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 110A. IDss (min): 25uA. Pd (Power Dissipation, Max): 130W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
Set of 1
2.19$ VAT incl.
(2.03$ excl. VAT)
2.19$

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