NPN bipolar transistors

NPN transistor, PCB soldering, TO-92, 100mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 40V/35V. Maximum dissipation Ptot [W]: 0.25W

NPN transistor, PCB soldering, A21/B, 30mA. Housing: PCB soldering. Housing: A21/B. Collector current Ic [A], max.: 30mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 15V/10V. Maximum dissipation Ptot [W]: 0.12W

NPN transistor, PCB soldering, TO-3, 1A. Housing: PCB soldering. Housing: TO-3. Collector current Ic [A], max.: 1A. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 1000V/500V. Maximum dissipation Ptot [W]: 22W

NPN transistor, 0.2A, 60V. Collector current: 0.2A. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 220 MHz. Pd (Power Dissipation, Max): 0.3W. Type of transistor: NPN

NPN transistor, 0.1A, TO-92, TO-92, 60V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 60V. BE diode: no. Pinout: 1. Cost): 2.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Max hFE gain: 240. Minimum hFE gain: 120. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 0.15V. Maximum saturation voltage VCE(sat): 0.3V

NPN transistor, 0.05A, 50V. Collector current: 0.05A. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Pd (Power Dissipation, Max): 0.3W. Type of transistor: NPN

NPN transistor, 0.7A, 20V. Collector current: 0.7A. Collector/emitter voltage Vceo: 20V. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: 'lo-sat'. Pd (Power Dissipation, Max): 0.25W. Type of transistor: NPN

NPN transistor, 0.7A, 30 v. Collector current: 0.7A. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 170 MHz. Function: UNI. Equivalents: SONY--8-729-102-03. Pd (Power Dissipation, Max): 0.35W. Type of transistor: NPN

NPN transistor, 8A, TO-3PN ( 2-16C1B ), TO-3PN, 140V. Collector current: 8A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Collector/emitter voltage Vceo: 140V. BE diode: no. Cost): 120pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Function: Audio Power Amplifier, DC-DC Converter. Max hFE gain: 200. Minimum hFE gain: 60. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. RoHS: yes. Spec info: complementary transistor (pair) 2SB817. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 160V. Vebo: 6V

NPN transistor, 12A, TO-220, TO-220AB, 50V. Collector current: 12A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: high-speed inverters, converters, low-sat. Max hFE gain: 280. Minimum hFE gain: 70. Ic(pulse): 15A. Marking on the case: D1062. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. Spec info: complementary transistor (pair) 2SB826. Assembly/installation: PCB through-hole mounting. Tf(max): 1.2us. Tf(min): 0.4us. Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Vebo: 6V

NPN transistor, 10A, TO-3 ( TO-204 ), TO-3, 110V. Collector current: 10A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 110V. Cost): 200pF. Quantity per case: 1. Semiconductor material: silicon. FT: 1 MHz. Number of terminals: 2. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 130V. Saturation voltage VCE(sat): 1.5V. Vebo: 10V

NPN transistor, 4A, TO-220, TO-220, 50V. Collector current: 4A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. Max hFE gain: 230. Minimum hFE gain: 60. RoHS: no. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 70V

NPN transistor, 1A, 30 v. Collector current: 1A. Collector/emitter voltage Vceo: 30 v. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Pd (Power Dissipation, Max): 1W. Spec info: substitute. Type of transistor: NPN

NPN transistor, 0.1A, 30 v. Collector current: 0.1A. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 0.4W. Spec info: substitute. Type of transistor: NPN

NPN transistor, 2A, TO-92, TO-92MOD ( 2-5J1A ), 50V. Collector current: 2A. Housing: TO-92. Housing (according to data sheet): TO-92MOD ( 2-5J1A ). Collector/emitter voltage Vceo: 50V. BE diode: no. Cost): 12pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 400. Minimum hFE gain: 200. Ic(pulse): 4A. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. RoHS: yes. Spec info: complementary transistor (pair) 2SB892. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Silicon Darlington Transistor'. Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 0.15V. Vebo: 6V

NPN transistor, PCB soldering, TO-3, 10A. Housing: PCB soldering. Housing: TO-3. Collector current Ic [A], max.: 10A. RoHS: no. Component family: high voltage NPN transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2SD1279. Collector-emitter voltage Uceo [V]: 600V. Cutoff frequency ft [MHz]: 3 MHz. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering, M37/J, 7A. Housing: PCB soldering. Housing: M37/J. Collector current Ic [A], max.: 7A. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 120V. Maximum dissipation Ptot [W]: 70W

NPN transistor, 8A, 120V. Collector current: 8A. Collector/emitter voltage Vceo: 120V. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Pd (Power Dissipation, Max): 80W. Type of transistor: NPN

NPN transistor, 0.5A, 25V. Collector current: 0.5A. Collector/emitter voltage Vceo: 25V. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: 2.32k Ohms. Type of transistor: NPN

NPN transistor, 0.5A, 25V. Collector current: 0.5A. Collector/emitter voltage Vceo: 25V. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: Io-sat. Pd (Power Dissipation, Max): 0.6W. Type of transistor: NPN

NPN transistor, 5A, TO-3P ( TO-218 SOT-93 ), TO-3P, 800V. Collector current: 5A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 5A, TO-3P ( TO-218 SOT-93 ), TO-3P, 800V. Collector current: 5A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 800V. Conditioning: plastic tube. Conditioning unit: 30. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Minimum hFE gain: 8. Ic(pulse): 16A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar'. Tf(max): 0.7us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 7V

NPN transistor, 5A, TO-3PN ( 2-16C1B ), TO-3PN, 800V. Collector current: 5A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 120W. Spec info: fr--IC=1A; VCE=10V, 3MHz. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 5A, TO-247, TO-247, 600V. Collector current: 5A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 600V. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 80W. Spec info: Rbe 50 Ohms. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, PCB soldering, M46/J, 6A, 600V. Housing: PCB soldering. Housing: M46/J. Collector current Ic [A], max.: 6A. Collector/emitter voltage Vceo: 600V. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 1500V/600V. Maximum dissipation Ptot [W]: 80W. Manufacturer's marking: silicon. Cutoff frequency ft [MHz]: 80W. Operating temperature range min (°C): NPN. Operating temperature range max (°C): 1500V