NPN bipolar transistors

NPN transistor, 20A, 800V. Collector current: 20A. Collector/emitter voltage Vceo: 800V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 120W. Spec info: 8.729.033.99. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 15A, TO-3PF (SOT399, 2-16E3A), TO-3PML, 800V. Collector current: 15A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PML. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: Ultrahigh-Definition CRT Display. Max hFE gain: 30. Minimum hFE gain: 4. Ic(pulse): 35A. Marking on the case: C5302. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 75W. Spec info: fast speed (tf=100ns typ). Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Silicon Transistor'. Tf(max): 0.2us. Tf(min): 0.1us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 6V

NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F2A ), 600V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264 ( 2-21F2A ). Collector/emitter voltage Vceo: 600V. Quantity per case: 1. Semiconductor material: silicon. FT: 1.7 MHz. Max hFE gain: 38. Minimum hFE gain: 10. Ic(pulse): 30A. Marking on the case: C5331. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 180W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused MESA Type'. Tf(max): 0.3us. Tf(min): 0.12us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Vebo: 5V

NPN transistor, PCB soldering, D35/B, 20mA. Housing: PCB soldering. Housing: D35/B. Collector current Ic [A], max.: 20mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/20V. Maximum dissipation Ptot [W]: 0.1W

NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264 ( 2-21F1A ). Collector/emitter voltage Vceo: 230V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Pd (Power Dissipation, Max): 180W. Spec info: complementary transistor (pair) 2SA1987. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 150mA, TO-92, TO-92S, 50V. Collector current: 150mA. Housing: TO-92. Housing (according to data sheet): TO-92S. Collector/emitter voltage Vceo: 50V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: general purpose. Ic(pulse): 400mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.2W. Spec info: complementary transistor (pair) 2SA608. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 60V. Vebo: 6V

NPN transistor, 8A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 600V. Collector current: 8A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 600V. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Semiconductor material: silicon. FT: 1.7 MHz. Function: High Switching, Horizontal Deflection out. Max hFE gain: 35. Minimum hFE gain: 4.3. Ic(pulse): 16A. Marking on the case: C5386. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Spec info: MONITOR Hi-res. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused MESA Type'. Tf(max): 0.3us. Tf(min): 0.15us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Vebo: 5V

NPN transistor, 10A, 600V. Collector current: 10A. Collector/emitter voltage Vceo: 600V. Quantity per case: 1. Semiconductor material: silicon. Function: VCE(sat) 3V max. Note: 'Triple Diffused MESA Type'. Spec info: MONITOR, Hi-res (F). Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 14A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 600V. Collector current: 14A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 600V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 64kHz. Function: Monitor HA,hi-res, fH--64KHz. Ic(pulse): 28A. Pd (Power Dissipation, Max): 60W. Spec info: VCE(sat) max. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 14A, TO-3PF (SOT399, 2-16E3A), TO-3FP, 600V. Collector current: 14A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3FP. Collector/emitter voltage Vceo: 600V. BE diode: no. Cost): 190pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: HA, Hi-res. Ic(pulse): 28A. Pd (Power Dissipation, Max): 60W. Spec info: fH--64KHz. Assembly/installation: PCB through-hole mounting. Tf (type): 0.15us. Type of transistor: NPN. Vcbo: 1500V. Maximum saturation voltage VCE(sat): 3V. Vebo: 5V

NPN transistor, 8A, TO-3PF (SOT399, 2-16E3A), TO-3PFM, 1500V. Collector current: 8A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PFM. Collector/emitter voltage Vceo: 1500V. Quantity per case: 1. Semiconductor material: silicon. FT: 64kHz. Function: CTV/Monitor Horizntal Deflection Output. Max hFE gain: 25. Minimum hFE gain: 5. Ic(pulse): 16A. Pd (Power Dissipation, Max): 50W. Spec info: Silicon NPN Triple Diffused. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Saturation voltage VCE(sat): 5V

NPN transistor, 12A, TO-3PFM ( 13-16A1A ), TO-3PFM, 700V. Collector current: 12A. Housing: TO-3PFM ( 13-16A1A ). Housing (according to data sheet): TO-3PFM. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: Horizontal Deflection Output. Max hFE gain: 30. Minimum hFE gain: 10. Ic(pulse): 24A. Marking on the case: C5449. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. Spec info: High Speed ​​Switching. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Tf(max): 0.2us. Tf(min): 0.15us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 6V

NPN transistor, 70mA, SSFP 1.4x0.8x0.6mm, 10V. Collector current: 70mA. Housing (according to data sheet): SSFP 1.4x0.8x0.6mm. Collector/emitter voltage Vceo: 10V. Quantity per case: 1. Semiconductor material: silicon. FT: 7GHz. Function: VHF/UHF. Max hFE gain: 200. Minimum hFE gain: 90. Marking on the case: LN. Pd (Power Dissipation, Max): 0.1W. Spec info: screen printing/SMD code LN. Type of transistor: NPN. Vcbo: 20V

NPN transistor, 17A, TO-264 ( TOP-3L ), TOP-3L, 1500V. Collector current: 17A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TOP-3L. Collector/emitter voltage Vceo: 1500V. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: Samsung Monitor 19 inch. Max hFE gain: 12. Minimum hFE gain: 6. Ic(pulse): 30A. Marking on the case: C5583. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Spec info: 'Triple diffusion mesa type'. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Tf(min): 0.2us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V

NPN transistor, 15A, 800V. Collector current: 15A. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: hi-res, monitor 19. Note: hFE 22...45 (Vce sat 3V, Vbe sat 1.5V). Spec info: Triple diffusion mesa tipe. Type of transistor: NPN. Vcbo: 1700V

NPN transistor, 12A, TO-3PF (SOT399, 2-16E3A), TO-3PMLH, 800V. Collector current: 12A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PMLH. Collector/emitter voltage Vceo: 800V. BE resistor: yes. CE diode: yes. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: High-Speed. Max hFE gain: 11. Minimum hFE gain: 3. Ic(pulse): 36A. Marking on the case: C5696. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 85W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Silicon Transistor'. Tf(max): 0.3us. Type of transistor: NPN. Vcbo: 1600V. Saturation voltage VCE(sat): 3V. Vebo: 5V

NPN transistor, 8A, TO-3PF (SOT399, 2-16E3A), TO-3PMLH, 800V. Collector current: 8A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PMLH. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: high speed, CTV-HA. Max hFE gain: 7. Minimum hFE gain: 5. Ic(pulse): 16A. Marking on the case: C5698. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 65W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Vebo: 5V

NPN transistor, PCB soldering, TO-251, 7.5A. Housing: PCB soldering. Housing: TO-251. Collector current Ic [A], max.: 7.5A. RoHS: yes. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 50V. Cutoff frequency ft [MHz]: 400 MHz. Maximum dissipation Ptot [W]: 15W

NPN transistor, 5A, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 80V. Collector current: 5A. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 400 MHz. Function: DC-DC converter, TFT power supply. Max hFE gain: 560. Minimum hFE gain: 200. Ic(pulse): 7.5A. Number of terminals: 2. Temperature: +150°C. Pd (Power Dissipation, Max): 15W. RoHS: yes. Spec info: complementary transistor (pair) 2SA2039. Assembly/installation: surface-mounted component (SMD). Tf(max): 35 ns. Tf(min): 35 ns. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.135V. Vebo: 6V

NPN transistor, 8A, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 80V. Collector current: 8A. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Collector/emitter voltage Vceo: 80V. BE diode: no. CE diode: no. Conditioning: plastic tube. Conditioning unit: 100dB. Quantity per case: 1. Semiconductor material: silicon. FT: 330 MHz. Function: DC-DC converter, TFT power supply. Max hFE gain: 560. Minimum hFE gain: 200. Ic(pulse): 11A. Marking on the case: C5707. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 15W. RoHS: yes. Spec info: complementary transistor (pair) 2SA2040. Assembly/installation: PCB through-hole mounting. Tf(max): 25 ns. Tf(min): 25 ns. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.11V

NPN transistor, 8A, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 80V. Collector current: 8A. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 330 MHz. Function: DC-DC converter, TFT power supply. Max hFE gain: 560. Minimum hFE gain: 200. Ic(pulse): 11A. Marking on the case: C5707T. Number of terminals: 2. Temperature: +150°C. Pd (Power Dissipation, Max): 15W. RoHS: yes. Spec info: complementary transistor (pair) 2SA2040FA. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial Planar Silicon Transistor'. Tf(max): 25 ns. Tf(min): 25 ns. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.11V. Vebo: 6V

NPN transistor, 21A, 700V. Collector current: 21A. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Function: High Speed ​​Switching. Note: Vce(sat) 3Vmax. Spec info: Icp 10A/64kHz, 8A/100kHz. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 20A, 800V. Collector current: 20A. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: Ultrahigh-Definition CRT Display Horizontal Def.Ou. Note: hFE 4...7 (Vce sat 3V, Vbe sat 1.5V). Spec info: 'Triple Diffused Planar Silicon Transistor'. Type of transistor: NPN. Vcbo: 1600V

NPN transistor, 12A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 800V. Collector current: 12A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 800V. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. Ic(pulse): 24A. Marking on the case: C5803. Number of terminals: 3. Pd (Power Dissipation, Max): 70W. Assembly/installation: PCB through-hole mounting. Tf(max): 0.3us. Tf(min): 0.1us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V

NPN transistor, 22A, TO-264 ( TOP-3L ), 2-21F2A, 750V. Collector current: 22A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): 2-21F2A. Collector/emitter voltage Vceo: 750V. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: For high resolution horizontal deflection, HD TV. Max hFE gain: 60. Minimum hFE gain: 5. Ic(pulse): 44A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused MESA Type'. Tf(max): 0.1us. Tf(min): 0.1us. Type of transistor: NPN. Vcbo: 1700V. Saturation voltage VCE(sat): 1.5V. Vebo: 5V