NPN bipolar transistors

NPN transistor, PCB soldering (SMD), SOT-23, 600mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 600mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1P. Collector-emitter voltage Uceo [V]: 40V. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering (SMD), SOT-23, 200mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 200mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1AM. Collector-emitter voltage Uceo [V]: 40V. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering (SMD), SOT-23, 600mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 150V. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 600mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 150V. RoHS: yes. Component family: PNP transistor. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 2L. Collector-emitter voltage Uceo [V]: 150V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.250W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Marking on the case: 2 L. Equivalents: MMBT5401LT1G. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. Spec info: screen printing/SMD code (2Lx Date Code). Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 160V. Saturation voltage VCE(sat): 0.2V. Vebo: 5V

NPN transistor, PCB soldering (SMD), SOT-23, 600mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 600mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: G1. Collector-emitter voltage Uceo [V]: 160V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering (SMD), SOT-23, 500mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 500mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1D. Collector-emitter voltage Uceo [V]: 300V. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering (SMD), SOT-23, 5mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 5mA. RoHS: no. Component family: NPN transistor. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 3EM. Collector-emitter voltage Uceo [V]: 25V. Cutoff frequency ft [MHz]: 650 MHz. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

ROHS: Yes. Housing: SOT23. Assembly/installation: SMD. Transistor type: BRT. Polarity: bipolar. Voltage (collector - emitter): 50V. Collector current Ic [A]: 0.1A. Power: 0.246W. Base-resistor resistance: 10k Ohms. Base-emitter resistance: 10k Ohms

NPN transistor, 10A, TO-3P ( TO-218 SOT-93 ), TO-218, 160V. Collector current: 10A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-218. Collector/emitter voltage Vceo: 160V. BE diode: no. CE diode: no. Darlington transistor?: yes. Semiconductor material: silicon. FT: 55 MHz. Function: pair of complementary transistors. Minimum hFE gain: 5000. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP & NPN

NPN transistor, 0.5A, 30 v. Collector current: 0.5A. Collector/emitter voltage Vceo: 30 v. BE diode: no. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: general purpose. Max hFE gain: 10000. Minimum hFE gain: 5000. Pd (Power Dissipation, Max): 0.625W. Technology: Darlington transistor. Tf(min): 125 MHz. Type of transistor: NPN. Vcbo: 30 v. Maximum saturation voltage VCE(sat): 1.5V. Vebo: 10V

NPN transistor, 500mA, TO-92, TO-92, 30 v. Collector current: 500mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. BE diode: no. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 125 MHz. Function: general purpose. Max hFE gain: 20000. Minimum hFE gain: 10000. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Darlington transistor. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 30 v. Maximum saturation voltage VCE(sat): 1.5V. Vebo: 10V

NPN transistor, 0.5A, TO-92, TO-92 (ammo pak), 300V. Collector current: 0.5A. Housing: TO-92. Housing (according to data sheet): TO-92 (ammo pak). Collector/emitter voltage Vceo: 300V. BE diode: no. Cost): 3pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: VIDEO amp.. Max hFE gain: 40. Minimum hFE gain: 25. Equivalents: KSP42. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: complementary transistor (pair) MPSA92. Type of transistor: NPN. Vcbo: 300V. Saturation voltage VCE(sat): 500mV. Vebo: 6V

NPN transistor, PCB soldering, TO-92, 5mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 5mA. RoHS: no. Component family: NPN transistor. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MPSH10. Collector-emitter voltage Uceo [V]: 25V. Cutoff frequency ft [MHz]: 650 MHz. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 0.5A, TO-92, TO-92M ( 9mm ), 300V. Collector current: 0.5A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 300V. BE diode: no. Cost): 3pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: hFE 25...40. Pd (Power Dissipation, Max): 1W. Spec info: One Watt High Voltage Transistor. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 1A, TO-92, TO-92M ( 9mm ), 50V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 50V. BE diode: no. Cost): 6pF. CE diode: no. Quantity per case: 1. FT: 100 MHz. Function: High hFE. Max hFE gain: 150000. Minimum hFE gain: 25000. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Vcbo: 60V. Maximum saturation voltage VCE(sat): 1.5V. Vebo: 12V

NPN transistor, 0.1A, SOT-23 ( TO-236 ), SC-59 ( 2.9x1.5x1.15mm ), 50V. Collector current: 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SC-59 ( 2.9x1.5x1.15mm ). Collector/emitter voltage Vceo: 50V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: transistor with bias resistor network. Max hFE gain: 100. Minimum hFE gain: 60. Note: Panasonic NV-SD450. Note: B1GBCFLL0035. Marking on the case: 8B. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 338mW. RoHS: yes. Spec info: screen printing/SMD code 8B. Assembly/installation: surface-mounted component (SMD). Technology: Digital Transistors (BRT). Type of transistor: NPN. Vcbo: 50V

NPN transistor. BE diode: no. C(in): 9pF. Cost): 3.5pF. CE diode: no. Quantity per case: 1

NPN transistor, 8A, SOT-199, SOT-199, 700V. Collector current: 8A. Housing: SOT-199. Housing (according to data sheet): SOT-199. Collector/emitter voltage Vceo: 700V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: Made for Grundig. Pd (Power Dissipation, Max): 34W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, PCB soldering, TO-92, 600mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 600mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: P2N2222A. Collector-emitter voltage Uceo [V]: 40V. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, SOT23, 4.87k Ohms. Housing: SOT23. Collector-Emitter Voltage VCEO: 4.87k Ohms. Type: transistor for low power applications. Polarity: NPN. Power: 0.36W. Collector-Base Voltage VCBO: 4.87k Ohms. Mounting Type: SMD. Bandwidth MHz: 50MHz. DC Collector/Base Gain hFE min.: 25. Current Max 1: 0.5A. Series: SMBTA

Housing: SOT23. Frequency: 100MHz. Assembly/installation: SMD. Type of transistor: NPN. Polarity: bipolar. Voltage (collector - emitter): 25V. Collector current Ic [A]: 1.5A. Gain hfe: 200...350. Power: 300mW

NPN transistor, 4A, TO-220, TO-220AB, 400V. Collector current: 4A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 400V. BE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: High voltage fast switching. Max hFE gain: 32. Minimum hFE gain: 15. Ic(pulse): 8A. Marking on the case: 13005A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Tf(min): 0.2us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 0.5V. Vebo: 9V

NPN transistor, 8A, TO-220, TO-220AB, 400V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 400V. BE diode: no. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 30. Minimum hFE gain: 16. Ic(pulse): 16A. Marking on the case: 13007A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 350 ns. Tf(min): 40 ns. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1.2V. Vebo: 9V

NPN transistor. BE diode: no. Cost): 122pF. CE diode: no. Quantity per case: 1

NPN transistor, 5A, SOT-223 ( TO-226 ), SOT-223, 60V. Collector current: 5A. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Collector/emitter voltage Vceo: 60V. BE diode: no. Cost): 215pF. CE diode: no. Conditioning: roll. Conditioning unit: 1000. Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Function: Low voltage fast-switching NPN power transistor. Max hFE gain: 350. Minimum hFE gain: 30. Ic(pulse): 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 1.6W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 150V. Saturation voltage VCE(sat): 0.32V. Vebo: 7V

NPN transistor, PCB soldering, TO-247, 10A. Housing: PCB soldering. Housing: TO-247. Collector current Ic [A], max.: 10A. RoHS: yes. Component family: Darlington NPN Power Transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: TIP142. Collector-emitter voltage Uceo [V]: 100V. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C