NPN bipolar transistors

NPN transistor, 10A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 700V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 700V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: FAST-SWITCH. Max hFE gain: 18. Minimum hFE gain: 5. Ic(pulse): 16A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 58W. RoHS: yes. Spec info: ICM--16A (tp=5ms). Assembly/installation: PCB through-hole mounting. Tf(max): 0.6us. Tf(min): 0.3us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 1.3V. Vebo: 7V

NPN transistor, 14A, TO-3PF (SOT399, 2-16E3A), ISOWATT218FX, 1500V. Collector current: 14A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): ISOWATT218FX. Collector/emitter voltage Vceo: 1500V. BE diode: no. Cost): 1.6pF. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 64kHz. Function: FAST-SWITCH fh--64KHz (IC=6A). Production date: 2014/17. Max hFE gain: 8.5. Minimum hFE gain: 6. Ic(pulse): 21A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 62W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.25us. Tf(min): 0.12us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 2.5V. Vebo: 9V

NPN transistor, 50A, TO-3 ( TO-204 ), TO-3 ( TO–204AE ), 400V. Collector current: 50A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO–204AE ). Collector/emitter voltage Vceo: 400V. BE diode: no. Cost): 4pF. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: hFE 25. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 50A, TO-3 ( TO-204 ), TO-3 ( TO-204 ), 120V. Collector current: 50A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO-204 ). Collector/emitter voltage Vceo: 120V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: hFE 1000 (IC=25Adc, VCE=5Vdc, RBE=1K). Max hFE gain: 18000. Minimum hFE gain: 1000. Ic(pulse): 100A. Pd (Power Dissipation, Max): 300W. Spec info: complementary transistor (pair) MJ11033. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 120V. Saturation voltage VCE(sat): 2.5V

NPN transistor, TO-3 ( TO-204 ), TO-3, 140V, 20A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 140V. Collector current: 20A. RoHS: yes. Number of terminals: 2. Pd (Power Dissipation, Max): 250W. Spec info: complementary transistor (pair) MJ15004. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 140V. Saturation voltage VCE(sat): 1V. Vebo: 5V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: Power Transistor. Max hFE gain: 150. Minimum hFE gain: 25

NPN transistor, 15A, TO-3 ( TO-204 ), TO-3, 120V. Collector current: 15A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 120V. BE diode: no. BE resistor: 70. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 0.8 MHz. Pd (Power Dissipation, Max): 180W. Spec info: Motorola. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 200V

NPN transistor, 15A, TO-3 ( TO-204 ), TO-3, 120V. Collector current: 15A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 120V. BE diode: no. BE resistor: 70. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 0.8 MHz. Max hFE gain: 70. Minimum hFE gain: 10. Number of terminals: 2. Pd (Power Dissipation, Max): 180W. RoHS: yes. Spec info: complementary transistor (pair) MJ15016. Assembly/installation: PCB through-hole mounting. Tf(max): 6us. Tf(min): 4us. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 200V. Saturation voltage VCE(sat): 1.1V. Vebo: 7V

NPN transistor, 16A, TO-3 ( TO-204 ), TO-3, 200V. Collector current: 16A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 200V. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Pd (Power Dissipation, Max): 250W. Spec info: complementary transistor (pair) MJ15023. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 350V

NPN transistor, 16A, TO-3 ( TO-204 ), TO-3, 250V. Collector current: 16A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 250V. BE diode: no. Cost): 1.6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: High Power Audio. Max hFE gain: 60. Minimum hFE gain: 15. Ic(pulse): 30A. Number of terminals: 2. Pd (Power Dissipation, Max): 250W. RoHS: yes. Spec info: complementary transistor (pair) MJ15025. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Vebo: 5V

NPN transistor, PCB soldering, TO-3, 16A. Housing: PCB soldering. Housing: TO-3. Collector current Ic [A], max.: 16A. RoHS: yes. Component family: high voltage NPN transistor. Housing (JEDEC standard): TO-204AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJ21194G. Collector-emitter voltage Uceo [V]: 250V. Cutoff frequency ft [MHz]: 4 MHz. Maximum dissipation Ptot [W]: 250W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C

NPN transistor, PCB soldering (SMD), D-PAK, 8A. Housing: PCB soldering (SMD). Housing: D-PAK. Collector current Ic [A], max.: 8A. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-252. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: J44H11. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 85 MHz. Maximum dissipation Ptot [W]: 20W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 8A, TO-220, TO-220AB, 400V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 400V. BE diode: no. Cost): 3pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 14 MHz. Function: switching circuits. Max hFE gain: 40. Minimum hFE gain: 8. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. RoHS: yes. Spec info: High Speed ​​Switching. Assembly/installation: PCB through-hole mounting. Technology: Bipolar Power Transistor. Tf(max): 0.7us. Tf(min): 0.23us. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Vebo: 9V

NPN transistor, PCB soldering, TO-220, 8A. Housing: PCB soldering. Housing: TO-220. Collector current Ic [A], max.: 8A. RoHS: yes. Component family: high voltage NPN transistor. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE13007G. Collector-emitter voltage Uceo [V]: 400V. Cutoff frequency ft [MHz]: 4 MHz. Maximum dissipation Ptot [W]: 80W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering, TO-220, 12A. Housing: PCB soldering. Housing: TO-220. Collector current Ic [A], max.: 12A. RoHS: yes. Component family: high voltage NPN transistor. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE13009G. Collector-emitter voltage Uceo [V]: 400V. Cutoff frequency ft [MHz]: 4 MHz. Maximum dissipation Ptot [W]: 100W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 8A, TO-220, TO-220, 150V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 150V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: for audio amplifier. Max hFE gain: 40. Minimum hFE gain: 20. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Spec info: complementary transistor (pair) MJE15031. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 150V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN transistor, PCB soldering, TO-220, 8A, TO-220AB, 250V. Housing: PCB soldering. Housing: TO-220. Collector current Ic [A], max.: 8A. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 250V. RoHS: yes. Component family: high voltage NPN transistor. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE15032G. Collector-emitter voltage Uceo [V]: 250V. Cutoff frequency ft [MHz]: 30 MHz. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. Spec info: complementary transistor (pair) MJE15033. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN transistor, 4A, TO-220, TO-220AB, 350V. Collector current: 4A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 350V. BE diode: no. Cost): 2.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: hFE=100 (Min) @ IC=0.5Adc. Pd (Power Dissipation, Max): 50W. Spec info: complementary transistor (pair) MJE15035G. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, PCB soldering, TO-220, 5A. Housing: PCB soldering. Housing: TO-220. Collector current Ic [A], max.: 5A. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE18004G. Collector-emitter voltage Uceo [V]: 450V. Cutoff frequency ft [MHz]: 13 MHz. Maximum dissipation Ptot [W]: 75W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 5A, TO-126 (TO-225, SOT-32), TO-225, 40V. Collector current: 5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 40V. BE diode: no. Cost): 80pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 65MHz. Max hFE gain: 180. Minimum hFE gain: 45. Pd (Power Dissipation, Max): 15W. Spec info: complementary transistor (pair) MJE210. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 25V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1.8V. Vebo: 8V

NPN transistor, 10A, TO-220, TO-220AB, 60V. Collector current: 10A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: for Hi-fi audio amplifiers and switching regulators. Max hFE gain: 100. Minimum hFE gain: 20. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Spec info: complementary transistor (pair) MJE3055T. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1.1V. Maximum saturation voltage VCE(sat): 8V. Vebo: 5V

NPN transistor, 0.5A, TO-126 (TO-225, SOT-32), TO-126 ( TO-225 ), 500V. Collector current: 0.5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126 ( TO-225 ). Collector/emitter voltage Vceo: 500V. BE diode: no. Cost): 30pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L, VID.. Equivalents: KSE340. Pd (Power Dissipation, Max): 20.8W. RoHS: yes. Spec info: complementary transistor (pair) MJE350. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 300V

NPN transistor, 1.5A, 60V. Collector current: 1.5A. Collector/emitter voltage Vceo: 60V. BE diode: no. Cost): 1000pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Pd (Power Dissipation, Max): 20W. Type of transistor: NPN

NPN transistor, 1000V, 5A, TO-220-F. Collector-Emitter Voltage VCEO: 1000V. Collector current: 5A. Housing: TO-220-F. Type of transistor: Power Transistor. Polarity: NPN. Applications: switching. Power: 35W. Max frequency: 13MHz

NPN transistor, 16A, TO-264 ( TOP-3L ), TO-264, 250V. Collector current: 16A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 250V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min @ IC=8Adc. Max hFE gain: 100. Minimum hFE gain: 25. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. Spec info: complementary transistor (pair) MJL21195. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Vebo: 5V

Housing: TO264. Assembly/installation: THT. Type of transistor: NPN. Polarity: bipolar. Voltage (collector - emitter): 260V. Collector current Ic [A]: 15A. Conditioning: tubus. Power dissipation: 200W. Power: 200W