NPN bipolar transistors

NPN transistor, 15A, 160V. Collector current: 15A. Collector/emitter voltage Vceo: 160V. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Function: insulated package transistor. Pd (Power Dissipation, Max): 85W. Spec info: complementary transistor (pair) 2SA1673. Type of transistor: NPN. Vcbo: 200V

NPN transistor, 8A, TO-3PF (SOT399, 2-16E3A), TO-3PML, 800V. Collector current: 8A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PML. Collector/emitter voltage Vceo: 800V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Function: SMPS. Pd (Power Dissipation, Max): 60W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1100V

NPN transistor, 10A, TO-3P ( TO-218 SOT-93 ), TO-3P, 140V. Collector current: 10A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 140V. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Function: NF/L. Pd (Power Dissipation, Max): 80W. Spec info: complementary transistor (pair) 2SA1695. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 200V

NPN transistor, 10A, TO-3P ( TO-218 SOT-93 ), TO-3P, 140V. Collector current: 10A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 140V. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Function: NF/L. Pd (Power Dissipation, Max): 80W. Spec info: complementary transistor (pair) 2SA1695. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 200V

NPN transistor, 3A, TO-220FP, FM20 (TO220F), 50V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): FM20 (TO220F). Collector/emitter voltage Vceo: 50V. BE diode: no. Cost): 30pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 40 MHz. Function: High hFE, LOW Vce(sat). Pd (Power Dissipation, Max): 25W. Technology: NPN Triple Diffused Planar Transistor. Type of transistor: NPN. Vcbo: 80V. Maximum saturation voltage VCE(sat): 0.5V

NPN transistor, 3A, TO-220FP, TO-220F, 550V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 550V. Quantity per case: 1. Semiconductor material: silicon. FT: 6 MHz. Function: High Voltage Switchihg Transistor. Max hFE gain: 30. Minimum hFE gain: 10. Ic(pulse): 6A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 30W. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Type of transistor: NPN. Vcbo: 900V. Saturation voltage VCE(sat): 1.2V. Vebo: 7V

NPN transistor, 3A, TO-220FP, TO-220F, 550V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 550V. Quantity per case: 1. Semiconductor material: silicon. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1000V

NPN transistor, 10A, 600V. Collector current: 10A. Collector/emitter voltage Vceo: 600V. Quantity per case: 1. Semiconductor material: silicon. Function: (F). Pd (Power Dissipation, Max): 50W. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 10A, TO-3P ( TO-218 SOT-93 ), SOT-93, 600V. Collector current: 10A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): SOT-93. Collector/emitter voltage Vceo: 600V. Quantity per case: 1. Semiconductor material: silicon. Function: 'Hi-res'. Pd (Power Dissipation, Max): 50W. Spec info: MONITOR. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, PCB soldering, D35/B, 100mA. Housing: PCB soldering. Housing: D35/B. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30 v. Maximum dissipation Ptot [W]: 0.2W

NPN transistor, 1.5A, SC-71, SC-71, 160V. Collector current: 1.5A. Housing: SC-71. Housing (according to data sheet): SC-71. Collector/emitter voltage Vceo: 160V. BE diode: no. Cost): 14pF. CE diode: no. Conditioning: roll. Conditioning unit: 2500. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Max hFE gain: 280. Minimum hFE gain: 140. Ic(pulse): 2.5A. Marking on the case: 12.9k Ohms. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. RoHS: yes. Spec info: complementary transistor (pair) 2SA1770. Assembly/installation: PCB through-hole mounting. Tf(max): 80 ns. Tf(min): 80 ns. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 180V. Saturation voltage VCE(sat): 0.13V. Vebo: 6V

NPN transistor, 1.5A, SC-71, SC-71, 160V. Collector current: 1.5A. Housing: SC-71. Housing (according to data sheet): SC-71. Collector/emitter voltage Vceo: 160V. BE diode: no. Cost): 14pF. CE diode: no. Conditioning: roll. Conditioning unit: 2500. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Max hFE gain: 400. Minimum hFE gain: 200. Ic(pulse): 2.5A. Marking on the case: 12.9k Ohms. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. RoHS: yes. Spec info: complementary transistor (pair) 2SA1770. Assembly/installation: PCB through-hole mounting. Tf(max): 80 ns. Tf(min): 80 ns. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 180V. Saturation voltage VCE(sat): 0.13V. Vebo: 6V

NPN transistor, 10mA, 1500V. Collector current: 10mA. Collector/emitter voltage Vceo: 1500V. Quantity per case: 1. Semiconductor material: silicon. Function: dynamic focus, high voltage switching. Note: Ic--10mA/30mApp. Pd (Power Dissipation, Max): 2W. Spec info: TO-220FI (Forming). Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 10mA, 1800V. Collector current: 10mA. Collector/emitter voltage Vceo: 1800V. Quantity per case: 1. Semiconductor material: silicon. Function: dynamic focus. Note: Ic--10mA/30mApp. Pd (Power Dissipation, Max): 2W. Spec info: TO-220FI. Type of transistor: NPN. Vcbo: 2000V

NPN transistor, 2A, SOT-89, 50V. Collector current: 2A. Housing: SOT-89. Collector/emitter voltage Vceo: 50V. BE diode: no. Cost): 25pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 210 MHz. Function: Io-sat. Max hFE gain: 270. Minimum hFE gain: 120. Note: screen printing/SMD code DK. Marking on the case: DK. Spec info: complementary transistor (pair) 2SA1797. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 0.13V. Maximum saturation voltage VCE(sat): 0.35V. Vebo: 6V

NPN transistor, 50mA, 1200V. Collector current: 50mA. Collector/emitter voltage Vceo: 1200V. Quantity per case: 1. Semiconductor material: silicon. FT: 5.5 MHz. Function: TV Dynamic Focus Applications. Note: High-Voltage Switching Applications. Pd (Power Dissipation, Max): 10W. Spec info: TO-220F. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 5A, 80V. Collector current: 5A. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI NF-E. Note: (F). Pd (Power Dissipation, Max): 55W. Spec info: complementary transistor (pair) 2SA1803. Type of transistor: NPN

NPN transistor, 6A, TO-3P ( TO-218 SOT-93 ), TO-3P, 1500V. Collector current: 6A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 1500V. Quantity per case: 1. Semiconductor material: silicon. Function: MONITOR. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 6A, TO-3PFM ( 13-16A1A ), TO-3PFM, 1500V. Collector current: 6A. Housing: TO-3PFM ( 13-16A1A ). Housing (according to data sheet): TO-3PFM. Collector/emitter voltage Vceo: 1500V. Quantity per case: 1. Compatibility: CVM4967A. Semiconductor material: silicon. FT: kHz. Function: Display-HA, Hi-res. Max hFE gain: 25. Ic(pulse): 16A. Equivalents: SAMSUNG 891 464744AA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Spec info: MONITOR. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused'. Tf(max): 0.4us. Type of transistor: NPN. Saturation voltage VCE(sat): 2V. Vebo: 6V

NPN transistor, 10A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 800V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: Display-HA. Pd (Power Dissipation, Max): 50W. Spec info: MONITOR. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 7A, 600V. Collector current: 7A. Collector/emitter voltage Vceo: 600V. Quantity per case: 1. Semiconductor material: silicon. Function: 'Hi-res'. Pd (Power Dissipation, Max): 50W. Spec info: VGA Monitor. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 7A, TO-3PF (SOT399, 2-16E3A), TO-3FP, 800V. Collector current: 7A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3FP. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 60W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 7A, TO-3PF ( SOT399 / 2-16E3A ), TO3PML, 800V. Collector current: 7A. Housing: TO-3PF ( SOT399 / 2-16E3A ). Housing (according to data sheet): TO3PML. Collector/emitter voltage Vceo: 800V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Max hFE gain: 8. Minimum hFE gain: 3. Ic(pulse): 16A. Pd (Power Dissipation, Max): 60W. Technology: 'Triple Diffused Planar Silicon Transistor'. Tf (type): 0.1us. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 1500V. Maximum saturation voltage VCE(sat): 5V. Vebo: 7V

NPN transistor, 1A, TO-220FP, 2-10R1A, 230V. Collector current: 1A. Housing: TO-220FP. Housing (according to data sheet): 2-10R1A. Collector/emitter voltage Vceo: 230V. BE diode: no. Cost): 20pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: NF-L. Max hFE gain: 320. Minimum hFE gain: 100. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Spec info: complementary transistor (pair) 2SA1837. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 230V. Maximum saturation voltage VCE(sat): 1.5V. Vebo: 5V

NPN transistor, 1A, TO-220FP, TO-220F, 230V. Collector current: 1A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 230V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: NF-L. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN