NPN bipolar transistors

NPN transistor, PCB soldering, M31/J, 8A. Housing: PCB soldering. Housing: M31/J. Collector current Ic [A], max.: 8A. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 1500V/800V. Maximum dissipation Ptot [W]: 150W

NPN transistor, 10A, TO-3P ( TO-218 SOT-93 ), TO-3P, 800V. Collector current: 10A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 150W. Spec info: Hi-deflect (MONITOR). Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 10A, TO-3P ( TO-218 SOT-93 ), TO-3P, 800V. Collector current: 10A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 150W. Spec info: Hi-deflect (MONITOR). Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 0.5A, 80V. Collector current: 0.5A. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Function: Low Frequency Drive Applications. Note: hFE 140...280. Pd (Power Dissipation, Max): 0.6W. Spec info: complementary transistor (pair) 2SA1480. Type of transistor: NPN

NPN transistor, PCB soldering, TO-98, 100mA. Housing: PCB soldering. Housing: TO-98. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/18V. Maximum dissipation Ptot [W]: 0.2W

NPN transistor, PCB soldering, TO-98, 100mA. Housing: PCB soldering. Housing: TO-98. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 35V/30V. Maximum dissipation Ptot [W]: 0.2W

NPN transistor, PCB soldering, TO-98, 100mA. Housing: PCB soldering. Housing: TO-98. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 35V/30V. Maximum dissipation Ptot [W]: 0.2W

NPN transistor, TO-220FP, TO-220F. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Quantity per case: 1. Function: S-L. Assembly/installation: PCB through-hole mounting

NPN transistor, PCB soldering, TO-92, 50mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 50mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 25V/16V. Maximum dissipation Ptot [W]: 0.4W

NPN transistor, 0.2A, 200V. Collector current: 0.2A. Collector/emitter voltage Vceo: 200V. Quantity per case: 1. Semiconductor material: silicon. FT: 400 MHz. Function: Hi-def. Pd (Power Dissipation, Max): 15W. Spec info: complementary transistor (pair) 2SA1476. Type of transistor: NPN

NPN transistor, PCB soldering, TO-92, 500mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 500mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 50V/20V. Maximum dissipation Ptot [W]: 0.5W

NPN transistor, 5A, TO-220FP, TO-220F, 550V. Collector current: 5A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 550V. C(in): 4pF. Cost): 10pF. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 900V

NPN transistor, 2A, TO-126F, TO-126LP, 30 v. Collector current: 2A. Housing: TO-126F. Housing (according to data sheet): TO-126LP. Collector/emitter voltage Vceo: 30 v. Resistor B: 22. BE resistor: 22. Quantity per case: 1. Semiconductor material: silicon. FT: 260 MHz. Function: hFE 800. Pd (Power Dissipation, Max): 1.5W. Spec info: Hi-Ube, lo-sat.. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, PCB soldering, TO-98, 20mA. Housing: PCB soldering. Housing: TO-98. Collector current Ic [A], max.: 20mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 40V/30V. Maximum dissipation Ptot [W]: 0.1W

NPN transistor, PCB soldering, TO-98, 50mA. Housing: PCB soldering. Housing: TO-98. Collector current Ic [A], max.: 50mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 40V. Maximum dissipation Ptot [W]: 0.2W

NPN transistor, 0.05A, 75V. Collector current: 0.05A. Collector/emitter voltage Vceo: 75V. Resistor B: 47. BE resistor: 10. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Function: TV-ZF-E. Pd (Power Dissipation, Max): 0.3W. Type of transistor: NPN

NPN transistor, 3A, TO-220FP, MF20 TO220F, 60V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): MF20 TO220F. Collector/emitter voltage Vceo: 60V. BE diode: no. Cost): 50pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Function: Driver for Solenoid and Motor. Minimum hFE gain: 500. Pd (Power Dissipation, Max): 25W. Type of transistor: NPN. Vcbo: 80V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 6V

NPN transistor, 3A, TO-220FP, MF20 TO220F, 80V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): MF20 TO220F. Collector/emitter voltage Vceo: 80V. BE diode: no. Cost): 50pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Function: Driver for Solenoid and Motor. Minimum hFE gain: 500. Pd (Power Dissipation, Max): 25W. Type of transistor: NPN. Vcbo: 100V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 6V

NPN transistor, 8A, TO-3P ( TO-218 SOT-93 ), TO-3P, 160V. Collector current: 8A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 160V. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Pd (Power Dissipation, Max): 80W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 10A, TO-3PN ( 2-16C1B ), TO-3PM, 140V. Collector current: 10A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PM. Collector/emitter voltage Vceo: 140V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Minimum hFE gain: 50. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 200V. Saturation voltage VCE(sat): 2V. Vebo: 6V

NPN transistor, 10A, 200V. Collector current: 10A. Collector/emitter voltage Vceo: 200V. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Pd (Power Dissipation, Max): 100W. Type of transistor: NPN

NPN transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3PB, 200V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3PB. Collector/emitter voltage Vceo: 200V. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Marking on the case: C3856. Number of terminals: 3. Pd (Power Dissipation, Max): 130W. Spec info: complementary transistor (pair) 2SA1492. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 200V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 200V. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Pd (Power Dissipation, Max): 130W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 17A, MT-200, 200V. Collector current: 17A. Housing (according to data sheet): MT-200. Collector/emitter voltage Vceo: 200V. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Pd (Power Dissipation, Max): 200W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 5A, 800V. Collector current: 5A. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 50W. Spec info: MONITOR. Type of transistor: NPN. Vcbo: 1500V