NPN bipolar transistors

NPN transistor, 500mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V. Collector current: 500mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 50V. Resistor B: 10k Ohms. BE diode: no. BE resistor: 10k Ohms. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: Transistor with built-in bias resistor. Minimum hFE gain: 70. Marking on the case: XCs. Number of terminals: 3. Pd (Power Dissipation, Max): 0.33W. RoHS: yes. Spec info: screen printing/CMS code XCs. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.3V. Vebo: 1V

NPN transistor, PCB soldering (SMD), SOT-89, 500mA. Housing: PCB soldering (SMD). Housing: SOT-89. Collector current Ic [A], max.: 500mA. RoHS: no. Component family: Darlington NPN Transistor. Housing (JEDEC standard): TO-243. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: EF. Collector-emitter voltage Uceo [V]: 30 v. Cutoff frequency ft [MHz]: 150 MHz. Maximum dissipation Ptot [W]: 1W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 1A, SOT-89 4-Pin ( 3+Tab ), SOT-89, 80V. Collector current: 1A. Housing: SOT-89 4-Pin ( 3+Tab ). Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 80V. Conditioning: roll. Conditioning unit: 1000. Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Function: audio and video amplifiers. Max hFE gain: 250. Minimum hFE gain: 40. Ic(pulse): 1.5A. Marking on the case: BH. Number of terminals: 3. Pd (Power Dissipation, Max): 1.3W. RoHS: yes. Spec info: screen printing/SMD code BH. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN transistor, PCB soldering (SMD), SOT-89, 1A. Housing: PCB soldering (SMD). Housing: SOT-89. Collector current Ic [A], max.: 1A. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-243. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BL. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 180 MHz. Maximum dissipation Ptot [W]: 1.35W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering, TO-18, 200mA. Housing: PCB soldering. Housing: TO-18. Collector current Ic [A], max.: 200mA. RoHS: no. Component family: NPN transistor. Housing (JEDEC standard): TO-206AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BCY59-9. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 200 MHz. Maximum dissipation Ptot [W]: 0.6W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C

NPN transistor, PCB soldering, TO-220AB, 2A. Housing: PCB soldering. Housing: TO-220AB. Collector current Ic [A], max.: 2A. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD239C. Collector-emitter voltage Uceo [V]: 100V. Maximum dissipation Ptot [W]: 30W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering, TO-220AB, 6A. Housing: PCB soldering. Housing: TO-220AB. Collector current Ic [A], max.: 6A. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD243C. Collector-emitter voltage Uceo [V]: 100V. Maximum dissipation Ptot [W]: 65W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 10A, 115V. Collector current: 10A. Collector/emitter voltage Vceo: 115V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Pd (Power Dissipation, Max): 80W. Spec info: complementary transistor (pair) BD246C. Type of transistor: NPN

NPN transistor, 4A, PCB soldering, TO-225. Collector current Ic [A], max.: 4A. Housing: PCB soldering. Housing: TO-225. Manufacturer's marking: BD441G. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 3 MHz. Maximum dissipation Ptot [W]: 36W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3

NPN transistor, PCB soldering, TO-220AB, 8A. Housing: PCB soldering. Housing: TO-220AB. Collector current Ic [A], max.: 8A. RoHS: yes. Component family: Darlington NPN Power Transistor. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD649. Collector-emitter voltage Uceo [V]: 120V. Maximum dissipation Ptot [W]: 62.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 10A, 45V. Collector current: 10A. Collector/emitter voltage Vceo: 45V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Pd (Power Dissipation, Max): 75W. Type of transistor: NPN

NPN transistor, SOT32, 80V. Housing: SOT32. Collector-Emitter Voltage VCEO: 80V. Type: Darlington transistor. Polarity: NPN. Power: 40W. Collector-Base Voltage VCBO: 80V. Mounting Type: PCB through-hole mounting. DC Collector/Base Gain hFE min.: 750. Current Max 1: 4A. Series: BD679

NPN transistor, 4A, TO-126 (TO-225, SOT-32), TO-126, 80V. Collector current: 4A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. BE diode: no. BE resistor: R1 typ=15k Ohms, R2 typ=100 Ohms. CE diode: yes. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Minimum hFE gain: 750. Ic(pulse): 6A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. RoHS: yes. Spec info: complementary transistor (pair) BD680A. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 80V. Saturation voltage VCE(sat): 2.8V

NPN transistor, 100V, 4A, TO-126. Collector-Emitter Voltage VCEO: 100V. Collector current: 4A. Housing: TO-126. Type of transistor: Darlington Power Transistor. Polarity: NPN. Type: Darlington transistor. Built-in diode: yes. Power: 40W

NPN transistor, PCB soldering, TO-225, 4A. Housing: PCB soldering. Housing: TO-225. Collector current Ic [A], max.: 4A. RoHS: yes. Component family: Darlington NPN Power Transistor. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD681G. Collector-emitter voltage Uceo [V]: 100V. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 4A, 80V. Collector current: 4A. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: NF-L. Pd (Power Dissipation, Max): 15W. Type of transistor: NPN

NPN transistor, 100V, 15A, TO-220. Collector-Emitter Voltage VCEO: 100V. Collector current: 15A. Housing: TO-220. Type of transistor: NPN power transistor. Polarity: NPN. Power: 90W

NPN transistor, 12A, TO-220, TO-220, 120V. Collector current: 12A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 120V. BE diode: yes. CE diode: yes. Darlington transistor?: 1. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: hFE 1000. Pd (Power Dissipation, Max): 125W. Spec info: complementary transistor (pair) BDT64C. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, PCB soldering, TO-220, 15A. Housing: PCB soldering. Housing: TO-220. Collector current Ic [A], max.: 15A. RoHS: yes. Component family: Darlington NPN Power Transistor. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BDW42G. Collector-emitter voltage Uceo [V]: 100V. Cutoff frequency ft [MHz]: 4 MHz. Maximum dissipation Ptot [W]: 85W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, TO-3P ( TO-218 SOT-93 ), SOT-93, 100V, 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): SOT-93. Collector/emitter voltage Vceo: 100V. Collector current: 15A. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 1 MHz. Function: hFE 750 (@3V, 6A). Pd (Power Dissipation, Max): 125W. Spec info: complementary transistor (pair) BDW84C

NPN transistor, 15A, TO-3PN ( 2-16C1B ), TO-3PN, 100V. Collector current: 15A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Collector/emitter voltage Vceo: 100V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 1 MHz. Max hFE gain: 20000. Minimum hFE gain: 750. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Spec info: complementary transistor (pair) BDW84C. Assembly/installation: PCB through-hole mounting. Tf(max): 7us. Tf(min): 0.9us. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 2.5V. Vebo: 5V

NPN transistor, 15A, TO-3PN ( 2-16C1B ), TO-3PN, 120V. Collector current: 15A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Collector/emitter voltage Vceo: 120V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 1 MHz. Function: hFE 750 (@3V, 6A). Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Spec info: complementary transistor (pair) BDW84D. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, TO220, 100V. Housing: TO220. Collector-Emitter Voltage VCEO: 100V. Type: Darlington transistor. Polarity: NPN. Power: 80W. Collector-Base Voltage VCBO: 100V. Mounting Type: PCB through-hole mounting. DC Collector/Base Gain hFE min.: 100. Current Max 1: 12A. Series: BDW93

NPN transistor, 12A, TO-220FP, TO-220F, 100V. Collector current: 12A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 100V. Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: 20 MHz. Function: complementary transistor (pair) BDW94CF. Max hFE gain: 20000. Minimum hFE gain: 100. Ic(pulse): 15A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 33W. RoHS: yes. Spec info: R1 typ.=10k Ohms, R2 typ.=150 Ohms. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 2V

NPN transistor, TO220, 100V. Housing: TO220. Collector-Emitter Voltage VCEO: 100V. Type: Darlington transistor. Polarity: NPN. Power: 70W. Collector-Base Voltage VCBO: 100V. Mounting Type: PCB through-hole mounting. DC Collector/Base Gain hFE min.: 750. Current Max 1: 10A. Series: BDX33