NPN bipolar transistors
BC184C
NPN transistor, 0.2A, 45V. Collector current: 0.2A. Collector/emitter voltage Vceo: 45V. Quantity pe...
NPN transistor, 0.2A, 45V. Collector current: 0.2A. Collector/emitter voltage Vceo: 45V. Quantity per case: 1. Semiconductor material: silicon. FT: 280 MHz. Pd (Power Dissipation, Max): 0.3W. Type of transistor: NPN
NPN transistor, 0.2A, 45V. Collector current: 0.2A. Collector/emitter voltage Vceo: 45V. Quantity per case: 1. Semiconductor material: silicon. FT: 280 MHz. Pd (Power Dissipation, Max): 0.3W. Type of transistor: NPN
BC237B
NPN transistor, 0.1A, TO-92, TO-92, 50V. Collector current: 0.1A. Housing: TO-92. Housing (according...
NPN transistor, 0.1A, TO-92, TO-92, 50V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Spec info: BC237/25. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN
NPN transistor, 0.1A, TO-92, TO-92, 50V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Spec info: BC237/25. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN
BC237BG
NPN transistor, PCB soldering, TO-92, 100mA. Housing: PCB soldering. Housing: TO-92. Collector curre...
NPN transistor, PCB soldering, TO-92, 100mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC237BG. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 200 MHz. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
NPN transistor, PCB soldering, TO-92, 100mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC237BG. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 200 MHz. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
BC238C
NPN transistor, 0.1A, TO-92, TO-92, 30 v. Collector current: 0.1A. Housing: TO-92. Housing (accordin...
NPN transistor, 0.1A, TO-92, TO-92, 30 v. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: general purpose. Number of terminals: 3. Pd (Power Dissipation, Max): 0.3W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN
NPN transistor, 0.1A, TO-92, TO-92, 30 v. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: general purpose. Number of terminals: 3. Pd (Power Dissipation, Max): 0.3W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN
BC300
NPN transistor, 0.5A, 120V, TO-39. Collector current: 0.5A. Collector-Emitter Voltage VCEO: 120V. Ho...
NPN transistor, 0.5A, 120V, TO-39. Collector current: 0.5A. Collector-Emitter Voltage VCEO: 120V. Housing: TO-39. Type of transistor: NPN transistor. Polarity: NPN. Power: 0.85W. Max frequency: 120MHz
NPN transistor, 0.5A, 120V, TO-39. Collector current: 0.5A. Collector-Emitter Voltage VCEO: 120V. Housing: TO-39. Type of transistor: NPN transistor. Polarity: NPN. Power: 0.85W. Max frequency: 120MHz
BC301
NPN transistor, 60V, 0.5A, TO-39. Collector-Emitter Voltage VCEO: 60V. Collector current: 0.5A. Hous...
NPN transistor, 60V, 0.5A, TO-39. Collector-Emitter Voltage VCEO: 60V. Collector current: 0.5A. Housing: TO-39. Type of transistor: NPN transistor. Polarity: NPN. Power: 0.85W. Max frequency: 120MHz
NPN transistor, 60V, 0.5A, TO-39. Collector-Emitter Voltage VCEO: 60V. Collector current: 0.5A. Housing: TO-39. Type of transistor: NPN transistor. Polarity: NPN. Power: 0.85W. Max frequency: 120MHz
BC302
NPN transistor, 0.5A, TO-39 ( TO-205 ), TO-39, 60V. Collector current: 0.5A. Housing: TO-39 ( TO-205...
NPN transistor, 0.5A, TO-39 ( TO-205 ), TO-39, 60V. Collector current: 0.5A. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Number of terminals: 3. Pd (Power Dissipation, Max): 0.85W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN
NPN transistor, 0.5A, TO-39 ( TO-205 ), TO-39, 60V. Collector current: 0.5A. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Number of terminals: 3. Pd (Power Dissipation, Max): 0.85W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN
BC337-25
NPN transistor, 0.8A, TO-92, TO-92, 45V. Collector current: 0.8A. Housing: TO-92. Housing (according...
NPN transistor, 0.8A, TO-92, TO-92, 45V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. BE diode: no. Cost): 15pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 210 MHz. Max hFE gain: 630. Minimum hFE gain: 100. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: complementary transistor (pair) BC327-25. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V
NPN transistor, 0.8A, TO-92, TO-92, 45V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. BE diode: no. Cost): 15pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 210 MHz. Max hFE gain: 630. Minimum hFE gain: 100. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: complementary transistor (pair) BC327-25. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V
BC337-25BULK
NPN transistor, PCB soldering, TO-92, 800mA. Housing: PCB soldering. Housing: TO-92. Collector curre...
NPN transistor, PCB soldering, TO-92, 800mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 800mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC337-25. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
NPN transistor, PCB soldering, TO-92, 800mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 800mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC337-25. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
BC337-25RL1G
NPN transistor, PCB soldering, TO-92, 800mA. Housing: PCB soldering. Housing: TO-92. Collector curre...
NPN transistor, PCB soldering, TO-92, 800mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 800mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC337-25. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 210 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
NPN transistor, PCB soldering, TO-92, 800mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 800mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC337-25. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 210 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
BC337-25TA
NPN transistor, 50V, 0.8A, TO-92. Collector-Emitter Voltage VCEO: 50V. Collector current: 0.8A. Hous...
NPN transistor, 50V, 0.8A, TO-92. Collector-Emitter Voltage VCEO: 50V. Collector current: 0.8A. Housing: TO-92. Type of transistor: NPN transistor. Polarity: NPN. Power: 0.63W
NPN transistor, 50V, 0.8A, TO-92. Collector-Emitter Voltage VCEO: 50V. Collector current: 0.8A. Housing: TO-92. Type of transistor: NPN transistor. Polarity: NPN. Power: 0.63W
BC337-25TAPE
NPN transistor, PCB soldering, TO-92, 800mA. Housing: PCB soldering. Housing: TO-92. Collector curre...
NPN transistor, PCB soldering, TO-92, 800mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 800mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC337-25. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
NPN transistor, PCB soldering, TO-92, 800mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 800mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC337-25. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
BC337-40
NPN transistor, PCB soldering, TO-92, 800mA, TO-92, 45V. Housing: PCB soldering. Housing: TO-92. Col...
NPN transistor, PCB soldering, TO-92, 800mA, TO-92, 45V. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 800mA. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC337-40. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. Spec info: complementary transistor (pair) BC327-40. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V
NPN transistor, PCB soldering, TO-92, 800mA, TO-92, 45V. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 800mA. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC337-40. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. Spec info: complementary transistor (pair) BC327-40. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V
BC337-40G
NPN transistor, PCB soldering, TO-92, 800mA. Housing: PCB soldering. Housing: TO-92. Collector curre...
NPN transistor, PCB soldering, TO-92, 800mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 800mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC337-40. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 210 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
NPN transistor, PCB soldering, TO-92, 800mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 800mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC337-40. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 210 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
BC337-40TA
NPN transistor, 50V, 0.8A, TO-92. Collector-Emitter Voltage VCEO: 50V. Collector current: 0.8A. Hous...
NPN transistor, 50V, 0.8A, TO-92. Collector-Emitter Voltage VCEO: 50V. Collector current: 0.8A. Housing: TO-92. Type of transistor: NPN transistor. Polarity: NPN. Power: 0.63W
NPN transistor, 50V, 0.8A, TO-92. Collector-Emitter Voltage VCEO: 50V. Collector current: 0.8A. Housing: TO-92. Type of transistor: NPN transistor. Polarity: NPN. Power: 0.63W
BC33716
NPN transistor, 0.8A, TO-92, TO-92, 45V. Collector current: 0.8A. Housing: TO-92. Housing (according...
NPN transistor, 0.8A, TO-92, TO-92, 45V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. BE diode: no. Cost): 12pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 250. Minimum hFE gain: 100. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: complementary transistor (pair) BC327-16. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V
NPN transistor, 0.8A, TO-92, TO-92, 45V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. BE diode: no. Cost): 12pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 250. Minimum hFE gain: 100. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: complementary transistor (pair) BC327-16. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V
BC33725
NPN transistor, 0.8A, TO-92, TO-92, 45V. Collector current: 0.8A. Housing: TO-92. Housing (according...
NPN transistor, 0.8A, TO-92, TO-92, 45V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. BE diode: no. Cost): 12pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 400. Minimum hFE gain: 160. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: complementary transistor (pair) BC327-25. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V
NPN transistor, 0.8A, TO-92, TO-92, 45V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. BE diode: no. Cost): 12pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 400. Minimum hFE gain: 160. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: complementary transistor (pair) BC327-25. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V
BC33740
NPN transistor, 0.8A, TO-92, TO-92Ammo-Pack, 45V. Collector current: 0.8A. Housing: TO-92. Housing (...
NPN transistor, 0.8A, TO-92, TO-92Ammo-Pack, 45V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92Ammo-Pack. Collector/emitter voltage Vceo: 45V. BE diode: no. Cost): 12pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 630. Minimum hFE gain: 250. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: complementary transistor (pair) BC327-40. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V
NPN transistor, 0.8A, TO-92, TO-92Ammo-Pack, 45V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92Ammo-Pack. Collector/emitter voltage Vceo: 45V. BE diode: no. Cost): 12pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 630. Minimum hFE gain: 250. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: complementary transistor (pair) BC327-40. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V
BC33740BU
NPN transistor, 50V, 0.8A, TO-92. Collector-Emitter Voltage VCEO: 50V. Collector current: 0.8A. Hous...
NPN transistor, 50V, 0.8A, TO-92. Collector-Emitter Voltage VCEO: 50V. Collector current: 0.8A. Housing: TO-92. Type of transistor: NPN transistor. Polarity: NPN. Power: 0.63W. Max frequency: 100MHz
NPN transistor, 50V, 0.8A, TO-92. Collector-Emitter Voltage VCEO: 50V. Collector current: 0.8A. Housing: TO-92. Type of transistor: NPN transistor. Polarity: NPN. Power: 0.63W. Max frequency: 100MHz
BC368
NPN transistor, 1A, TO-92, TO-92, 20V. Collector current: 1A. Housing: TO-92. Housing (according to ...
NPN transistor, 1A, TO-92, TO-92, 20V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 20V. BE diode: no. Cost): 40pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 40 MHz. Max hFE gain: 400. Minimum hFE gain: 63. Ic(pulse): 2A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Maximum saturation voltage VCE(sat): 0.5V
NPN transistor, 1A, TO-92, TO-92, 20V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 20V. BE diode: no. Cost): 40pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 40 MHz. Max hFE gain: 400. Minimum hFE gain: 63. Ic(pulse): 2A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Maximum saturation voltage VCE(sat): 0.5V
BC368-PHI
NPN transistor, 1A, TO-92, TO-92, 20V. Collector current: 1A. Housing: TO-92. Housing (according to ...
NPN transistor, 1A, TO-92, TO-92, 20V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 20V. Quantity per case: 1. Semiconductor material: silicon. FT: 40 MHz. Max hFE gain: 375. Minimum hFE gain: 85. Ic(pulse): 2A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.83W. RoHS: yes. Spec info: complementary transistor (pair) BC369. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 32V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V
NPN transistor, 1A, TO-92, TO-92, 20V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 20V. Quantity per case: 1. Semiconductor material: silicon. FT: 40 MHz. Max hFE gain: 375. Minimum hFE gain: 85. Ic(pulse): 2A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.83W. RoHS: yes. Spec info: complementary transistor (pair) BC369. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 32V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V
BC373
NPN transistor, 1A, TO-92, TO-92 ( Ammo Pack ), 80V. Collector current: 1A. Housing: TO-92. Housing ...
NPN transistor, 1A, TO-92, TO-92 ( Ammo Pack ), 80V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92 ( Ammo Pack ). Collector/emitter voltage Vceo: 80V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 160000. Minimum hFE gain: 8000. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: VEBO 12V. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 80V. Saturation voltage VCE(sat): 1V
NPN transistor, 1A, TO-92, TO-92 ( Ammo Pack ), 80V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92 ( Ammo Pack ). Collector/emitter voltage Vceo: 80V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 160000. Minimum hFE gain: 8000. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: VEBO 12V. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 80V. Saturation voltage VCE(sat): 1V
BC414C
NPN transistor, 0.1A, TO-92, TO-92, 50V. Collector current: 0.1A. Housing: TO-92. Housing (according...
NPN transistor, 0.1A, TO-92, TO-92, 50V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: general purpose. Number of terminals: 3. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN
NPN transistor, 0.1A, TO-92, TO-92, 50V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: general purpose. Number of terminals: 3. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN
BC517
NPN transistor, 1A, TO-92, TO-92, 30 v. Collector current: 1A. Housing: TO-92. Housing (according to...
NPN transistor, 1A, TO-92, TO-92, 30 v. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. BE diode: no. CE diode: no. Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: 200MHz. Minimum hFE gain: 30000. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: complementary transistor (pair) BC516. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 40V. Maximum saturation voltage VCE(sat): 1V. Vebo: 10V
NPN transistor, 1A, TO-92, TO-92, 30 v. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. BE diode: no. CE diode: no. Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: 200MHz. Minimum hFE gain: 30000. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: complementary transistor (pair) BC516. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 40V. Maximum saturation voltage VCE(sat): 1V. Vebo: 10V
BC517-D74Z
NPN transistor, PCB soldering, TO-92, 1.2A. Housing: PCB soldering. Housing: TO-92. Collector curren...
NPN transistor, PCB soldering, TO-92, 1.2A. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 1.2A. RoHS: yes. Component family: Darlington NPN Transistor. Housing (JEDEC standard): TO-226. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC517. Collector-emitter voltage Uceo [V]: 30 v. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
NPN transistor, PCB soldering, TO-92, 1.2A. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 1.2A. RoHS: yes. Component family: Darlington NPN Transistor. Housing (JEDEC standard): TO-226. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC517. Collector-emitter voltage Uceo [V]: 30 v. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
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